Infineon Technologies TDB6HK124N16RRBOSA1

Overview

TDB6HK124N16RRBOSA1 from Infineon Technologies is a hybrid power module integrating a 1600 V/70 A thyristor bridge, a 1200 V/70 A chopper IGBT, and a 1200 V/35 A fast recovery diode on a single Al₂O₃-insulated baseplate with integrated NTC temperature sensor (R₂₅ = 5 kΩ). It delivers 125 A output current at T_C = 85°C and supports phase-controlled rectification and DC chopper operation in industrial motor drives and traction converters.

For engineers reviewing the TDB6HK124N16RRBOSA1 datasheet, TDB6HK124N16RRBOSA1 pinout, TDB6HK124N16RRBOSA1 application, or TDB6HK124N16RRBOSA1 equivalent, key selection criteria include its dual-function thyristor–IGBT topology, 2.5 kV AC insulation rating, junction-to-case thermal resistance of 0.63 °C/W (thyristor), and gate trigger current of 150 mA - all critical for high-reliability medium-voltage converter designs.

Technical Context

This module implements a six-pulse thyristor rectifier (B6 configuration) combined with an independent IGBT-based chopper stage for regenerative braking or DC link voltage control. The thyristor section operates with gate-triggered commutation and features 190 µs turn-off time at T_vj = 125°C, while the IGBT provides hard-switched PWM capability up to 150 A peak collector current.

The integrated fast diode enables freewheeling during IGBT conduction and shares the same thermal path as the thyristor and IGBT chips. All semiconductor elements are mounted on a common copper baseplate with 12.5 mm creepage distance and CTI 225 V, supporting isolation-critical applications such as railway auxiliary converters and industrial UPS systems.

Key Specifications

Pinout & Package

Package: 62 mm industrial power module with insulated copper baseplate (Al₂O₃ ceramic), screw-mount terminals (M1), and integrated NTC thermistor connected to baseplate. Dimensions: 62 mm × 62 mm × 20 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid thyristor–IGBT converter applications.

Compared with FF600R12ME4 and SKM145GB12T4, TDB6HK124N16RRBOSA1 uniquely combines line-commutated rectification efficiency with forced-commutated chopper control in one package, delivering 22% lower conduction loss in 50 Hz rectifier stages while retaining regenerative capability - a trade-off not achievable with discrete IGBT-only modules.

Availability

TDB6HK124N16RRBOSA1 is available at Aetrix Electronics and suitable for industrial motor drives, railway traction converters, uninterruptible power supplies, and medium-voltage variable frequency drives requiring stable component supply and long-term lifecycle support.

Supply support for TDB6HK124N16RRBOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's TD series of hybrid power modules, designed specifically for high-power industrial converters requiring both phase-controlled rectification and active chopper functionality in compact, thermally optimized packages.

FAQ

What is the maximum allowable case temperature for continuous operation?

The module supports continuous operation up to T_C = 85°C for 125 A output current, as defined in the limiting on-state characteristic curve (page 7). Exceeding this temperature requires derating per the I_d vs. T_C graph; at T_C = 100°C, maximum output drops to 95 A to maintain T_vj ≤ 125°C.

Does the integrated NTC require external biasing circuitry?

Yes - the NTC (5 kΩ at 25°C) must be used in a voltage divider with a precision reference resistor and read by an ADC. The module provides only the two-terminal NTC element; no internal biasing, amplification, or linearization circuitry is included. Recommended excitation current is ≤1 mA to limit self-heating error to <0.1°C.

Can the thyristor and IGBT sections operate simultaneously?

No - simultaneous conduction is prohibited. The thyristor bridge and IGBT chopper share the same DC link node but are operated in complementary modes: thyristors conduct during rectification (AC→DC), while the IGBT is active only during chopper or inverter operation (DC→load). Cross-conduction would cause shoot-through and immediate device failure.

What gate drive voltage is required for reliable thyristor triggering?

A minimum gate trigger voltage of 2.5 V and current of 150 mA at 25°C is required, with pulse width ≥10 µs and di/dt ≥0.6 A/µs. At maximum junction temperature (125°C), trigger current rises to 250 mA; gate drivers must deliver ≥300 mA peak to ensure robust turn-on under worst-case thermal conditions.