Infineon Technologies TDB6HK124N16RRBPSA1

Overview

TDB6HK124N16RRBPSA1 from Infineon Technologies is a hybrid power module integrating a 6-pulse thyristor rectifier bridge, a chopper IGBT (1200 V / 70 A), and a fast recovery diode (1200 V / 35 A) in a single isolated package. It delivers 125 A output current at TC = 85°C, supports 1600 V repetitive reverse voltage on thyristor elements, and includes an integrated NTC temperature sensor (5 kΩ at 25°C). Designed for industrial AC-DC conversion and regenerative braking in traction inverters.

For engineers reviewing the TDB6HK124N16RRBPSA1 datasheet, TDB6HK124N16RRBPSA1 pinout, TDB6HK124N16RRBPSA1 application, or TDB6HK124N16RRBPSA1 equivalent, key selection criteria include thyristor I²t rating (2100 A²s), IGBT V_CE(sat) (2.05–2.75 V), fast diode Q_r (3.6–7.6 µAs), thermal resistance R_thJC (0.25 °C/W for IGBT), and isolation voltage (2.5 kV RMS).

Technical Context

This module implements a six-thyristor full-wave bridge for phase-controlled rectification paired with a discrete chopper IGBT for DC link modulation and energy recovery. The thyristor section operates with gate trigger current I_GT = 150 mA and critical di/dt = 120 A/µs, while the IGBT features gate threshold voltage V_GE(TO) = 4.5–6.5 V and input capacitance C_ies = 5.1 nF.

The integrated fast diode enables snubberless freewheeling with low Q_r (3.6 µAs @ 25°C) and soft recovery characteristics, and the Al₂O₃ ceramic baseplate provides 2.5 kV RMS isolation and CTI = 225 V. Thermal design is supported by transient Z_thJC data and case-to-heatsink resistance R_thCK = 0.16 °C/W (IGBT).

Key Specifications

Pinout & Package

Package: B6 (62 mm × 107 mm × 20 mm) insulated baseplate module with Al₂O₃ ceramic substrate, screw-mount terminals (M1), and integrated NTC sensor leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid thyristor-IGBT module applications.

Compared with FF600R12ME4 and TD1200N16KOF, TDB6HK124N16RRBPSA1 uniquely integrates rectification, chopper control, and thermal monitoring in one package-reducing PCB area by ~40%, eliminating inter-module gate timing skew, and enabling single-point thermal protection for the entire power stage.

Availability

TDB6HK124N16RRBPSA1 is available at Aetrix Electronics and suitable for industrial AC-DC rectifiers, traction motor drives, medium-voltage motor starters, and welding power supplies requiring stable component supply and long-term lifecycle support.

Supply support for TDB6HK124N16RRBPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's "PrimePACK™" family of high-power hybrid modules, designed specifically for industrial drive systems requiring integrated rectification, chopper control, and thermal intelligence in compact, isolated packages.

FAQ

What is the maximum allowable junction temperature for the thyristor and IGBT sections?

The maximum junction temperature T_{vj max} is 125 °C for both thyristor and IGBT elements, as specified in the thermal properties table. This limit applies under all operating conditions including surge current (I_TSM = 550 A) and must be maintained via proper heatsinking and thermal interface material to avoid permanent degradation of forward voltage and switching parameters.

Does the module support gate drive voltage levels beyond ±15 V?

No-the absolute maximum gate-emitter peak voltage V_GE is ±20 V, and recommended operating range is ±15 V for reliable IGBT switching. Exceeding ±15 V increases risk of gate oxide breakdown, especially at elevated temperatures; the gate threshold voltage V_GE(TO) (4.5–6.5 V) confirms compatibility with standard 15 V isolated gate drivers.

How is the NTC sensor electrically connected and calibrated?

The NTC sensor has two dedicated terminals (NTC1, NTC2) wired directly to a 5 kΩ thermistor at 25 °C with B_25/50 = 3375 K. Its resistance follows R₂ = R₁ exp[B(1/T₁ − 1/T₂)], and it is mounted on the baseplate for minimal thermal lag; calibration requires measuring resistance at known temperatures and applying the B-value equation.

Can this module replace a discrete thyristor + IGBT + diode assembly in existing designs?

Yes-TDB6HK124N16RRBPSA1 is a drop-in replacement for discrete assemblies using the same B6 footprint and M1 mounting torque (4 Nm ±15%). Its integrated structure reduces stray inductance by >60% versus discrete layouts, improves thermal coupling between devices, and eliminates manual gate loop routing-enabling faster time-to-market for upgraded power stages.