Infineon Technologies TDB6HK180N16RRBOSA1

Overview

TDB6HK180N16RRBOSA1 from Infineon is a 1200 V / 180 A EconoPACK™2 power module integrating IGBTs, thyristors, and diodes for active rectification and brake-chopper functions in industrial drives. It features 2.5 kV AC isolation, Al₂O₃ substrate with 0.02 K/W total case-to-heatsink thermal resistance, and supports 175 °C junction operation in inverter sections.

For engineers reviewing the TDB6HK180N16RRBOSA1 datasheet, TDB6HK180N16RRBOSA1 pinout, TDB6HK180N16RRBOSA1 application, or TDB6HK180N16RRBOSA1 equivalent, key selection criteria include its dual-function (IGBT + thyristor) topology, 1600 V reverse-blocking capability for rectifier legs, and validated 50 nH stray inductance for high-di/dt switching stability.

Technical Context

This module implements a half-controlled B6-bridge configuration using integrated thyristors for line-commutated rectification and IGBTs for active braking and regenerative energy handling. Its 1200 V IGBT section operates at up to 175 °C, while thyristor and diode sections are rated for 130 °C continuous operation.

The design integrates three distinct semiconductor technologies-IGBTs (1200 V/100 A), thyristors (1600 V/150 A RMS), and fast recovery diodes (1200 V/50 A)-within a single copper-base package with isolated Al₂O₃ substrate and solder-contact interconnects.

Key Specifications

Pinout & Package

EconoPACK™2 housing with copper baseplate, Al₂O₃ isolation, and 12-pin solder-terminal layout. Dimensions: 107 mm × 62 mm × 17 mm (L × W × H). Mounting: M5 screws, 3–6 Nm torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-controlled bridge applications.

Compared with FF600R12ME4 and BSM150GB120DN2, TDB6HK180N16RRBOSA1 uniquely combines thyristor-based rectification and IGBT-based chopper functionality in one package, reducing component count by 37% and eliminating inter-module gate timing skew in half-controlled B6-bridge designs.

Availability

TDB6HK180N16RRBOSA1 is available at Aetrix Electronics and suitable for industrial motor drives, regenerative braking systems, active front-end converters, and medium-voltage UPS systems requiring stable component supply across multi-year production cycles.

Supply support for TDB6HK180N16RRBOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's EconoPACK™2 power module family, designed specifically for compact, high-reliability drive inverters requiring integrated rectification and braking functionality in harsh industrial environments.

FAQ

What is the maximum allowable gate-emitter voltage for the IGBT section?

The gate-emitter peak voltage rating is ±20 V. Operation beyond this limit risks permanent gate oxide damage. Gate drive circuits must clamp voltage spikes using TVS diodes or active clamping, especially during high-di/dt switching where L_g×di/dt can induce overshoot. Recommended gate resistor values (RG_on/RG_off = 1.6 Ω) are validated for safe turn-on/turn-off energy distribution.

Can the thyristor and IGBT sections operate simultaneously in the same phase leg?

No - the internal topology separates thyristor anodes (P1–P3) from IGBT collectors (U–W); they serve distinct circuit functions. Thyristors conduct during AC line commutation, while IGBTs switch during DC-side chopper operation. Simultaneous conduction would cause shoot-through and catastrophic failure. Control logic must enforce strict dead-time and sequencing between rectifier and chopper modes.

What thermal interface material thickness is recommended to achieve the published RthCH value?

To achieve the specified 0.02 K/W total case-to-heatsink thermal resistance, use 0.1 mm nominal thickness of thermal grease with λ = 1 W/(m·K), applied uniformly across the full copper baseplate surface. Excess grease (>0.15 mm) increases RthCH by up to 18%; insufficient coverage creates dry spots that raise local junction temperature by >25 °C at 100 A load.

How is the 50 nH stray inductance measured and why does it matter?

The 50 nH stray inductance (L_sCE) is measured between collector and emitter terminals under high-frequency pulsed conditions (1 MHz, 100 A step) per IEC 60747-9. This value directly determines voltage overshoot (V = L×di/dt): at 100 A/µs, 50 nH generates 5 V overshoot, which must be absorbed within the 1200 V VCES rating. Lower L_sCE enables faster switching without snubbers.