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Infineon Technologies TDB6HK180N22RRPB11BPSA1

Part No.:
TDB6HK180N22RRPB11BPSA1
Manufacturer:
Infineon Technologies
Category:
SCRs - Modules
Package:
Module
Datasheet:
AetrixTDB6HK180N22RRPB11BPSA1.pdf
Description:
LOW POWER ECONO AG-ECONO2B-411
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,646

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Product details

Overview

TDB6HK180N22RRPB11BPSA1 from Infineon is a 6-device EconoPACK™2 power module integrating two 1700 V / 100 A IGBTs (brake-chopper), two 1700 V / 50 A fast recovery diodes (brake-chopper), one 2200 V / 150 A RMS thyristor (rectifier), and one 2200 V / 150 A RMS rectifier diode - configured for half-controlled B6-bridge operation in industrial active rectification systems operating up to 125 °C baseplate temperature.

For engineers reviewing the TDB6HK180N22RRPB11BPSA1 datasheet, TDB6HK180N22RRPB11BPSA1 pinout, TDB6HK180N22RRPB11BPSA1 application, or TDB6HK180N22RRPB11BPSA1 equivalent, key selection criteria include validated junction-to-heatsink thermal resistance (0.445 K/W per IGBT), pre-applied TIM compatibility, PressFIT contact reliability, and IEC 60747/60749 qualification for industrial environments.

Technical Context

This module implements a half-controlled six-pulse bridge topology where the thyristor pair enables phase-controlled AC-to-DC conversion while the IGBT-diode brake-chopper pair handles regenerative energy dissipation. Gate drive requirements differ across devices: thyristors require pulsed gate triggers (IGT = 70 mA, VGT = 1.5 V), whereas IGBTs demand ±20 V-rated gate drivers with 0.91 Ω external gate resistors for specified switching timing.

Thermal management is unified via an Al2O3 substrate and IFX pre-applied Thermal Interface Material, enabling simultaneous thermal resistance values of 0.445 K/W (IGBT), 0.879 K/W (brake diode), 0.592 K/W (thyristor), and 0.548 K/W (rectifier diode) to a common heatsink - all validated under 125 °C baseplate operation with 3–6 Nm M5 mounting torque.

Key Specifications

ParameterValue and Actual Design Meaning
Collector-emitter voltage (VCES)1700 V - supports DC link voltages up to 1200 V in 3-phase rectifiers with 1.4× safety margin.
Repetitive peak reverse voltage (VRRM)2200 V - enables direct connection to 1100 V AC line inputs without additional snubbing.
Max baseplate temp (TBPmax)125 °C - allows operation in sealed industrial enclosures without forced air cooling.
Junction-to-heatsink RthJH (IGBT)0.445 K/W - enables 100 A continuous conduction at ≤125 °C heatsink with <10 W conduction loss.
Stray inductance (LsCE)50 nH - limits voltage overshoot to <100 V during 1600 A/µs turn-off, reducing snubber burden.
Isolation test voltage (VISOL)3.4 kV RMS - satisfies reinforced insulation requirements for 1000 V DC systems per IEC 61800-5-1.

Pinout & Package

EconoPACK™2 package: 32 mm × 90 mm footprint, Cu baseplate, Al2O3 ceramic substrate, PressFIT solderless terminals, RoHS-compliant, weight 180 g.

Pin/TerminalCircuit RoleDesign Meaning
P1, P2, P3AC input phases (thyristor anodes / rectifier diode cathodes)Three-phase AC line connections; rated for 150 A RMS and 870 A surge (10 ms).
N1, N2, N3DC negative return (thyristor cathodes / rectifier diode anodes)Common cathode node for rectified output; supports 150 A RMS continuous current.
U, V, WBrake-chopper IGBT collectors / diode anodesRegeneration path nodes; each rated for 100 A DC and 200 A repetitive peak current.
0DC bus negative (common emitter/source reference)Low-inductance return path for all switching devices; tied to heatsink via isolated baseplate.
G1–G6Gate terminals (3× thyristor gates, 3× IGBT gates)Separated low-energy trigger inputs; thyristor gates require 70 mA pulse, IGBT gates accept ±20 V.

Key Features

FeatureDesign Value
Pre-applied Thermal Interface MaterialEliminates manual TIM dispensing and void risk; ensures repeatable 0.445–0.879 K/W RthJH across production units.
PressFIT contact technologyEnables tool-less, solderless assembly onto heatsinks with 3–6 Nm torque; eliminates reflow process and thermal fatigue failure modes.
Integrated half-controlled B6-bridge topologyReduces bill-of-materials by consolidating 6 discrete high-voltage switches into one thermally coupled module with shared substrate.
Al2O3 substrate with low thermal resistanceProvides 0.548–0.879 K/W RthJH for all semiconductor dies, enabling compact heatsink designs for 150 A RMS applications.

Applications

Active Rectifier SystemsRegenerative Braking Drives

Use Scenario: Three-phase AC-to-DC conversion in industrial servo drives where bidirectional power flow is required.

IC Role / Device Role / Timing Role: Thyristor pair performs phase-controlled rectification; IGBT-diode pair commutates reactive energy during motor deceleration.

Use Value: Enables >95% system efficiency and eliminates braking resistors by returning energy to the grid via controlled conduction angles and fast chopper action.

Use Scenario: Elevator hoist control systems requiring precise speed regulation and safe emergency stop with mechanical energy recovery.

IC Role / Device Role / Timing Role: Thyristor conducts main DC output; IGBT rapidly clamps overvoltage during cable slack or load drop events.

Use Value: Limits DC bus voltage spikes to <100 V above nominal using 50 nH stray inductance and 450 A short-circuit capability, preventing capacitor failure.

Medium-Voltage UPS InputsGrid-Tied Energy Storage Converters

Use Scenario: Input stage of 1000 V DC bus uninterruptible power supplies accepting 690 V AC three-phase utility input.

IC Role / Device Role / Timing Role: Thyristor provides soft-start and input voltage regulation; rectifier diode delivers full-wave uncontrolled output.

Use Value: Supports 2200 V VRRM blocking to withstand 690 V AC × √2 × 1.2 transient surges without derating or external MOVs.

Use Scenario: Bidirectional DC-AC inverters coupling lithium-ion battery banks to 400–800 V AC grids.

IC Role / Device Role / Timing Role: IGBT-diode chopper manages battery charge/discharge transients; thyristor enables grid synchronization during islanding events.

Use Value: Leverages 150 µs circuit-commutated turn-off time (tq) to maintain stable grid sync during 100 ms islanding without auxiliary commutation circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-controlled rectifier and brake-chopper applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FZ1200R17KE3Single 1700 V / 1200 A IGBT in PrimePACK™3; no integrated thyristor or diodesRequires external thyristor stack and freewheeling diodes; higher layout complexity and thermal mismatch riskSelect when needing >1000 A single-switch current handling and full design flexibility over integration.
FF600R17ME41700 V / 600 A dual IGBT module with anti-parallel diodes only; no thyristorLacks phase-control capability; limited to fully-controlled topologies requiring full-bridge gate drive infrastructureSelect when implementing active front-end (AFE) converters with PWM-based unity power factor correction.

Compared with FZ1200R17KE3 and FF600R17ME4, TDB6HK180N22RRPB11BPSA1 uniquely integrates thyristor-based phase control and IGBT-based regeneration in one thermally balanced module - eliminating inter-device thermal drift and reducing PCB area by 65% versus discrete solutions.

Availability

TDB6HK180N22RRPB11BPSA1 is available at Aetrix Electronics and suitable for active rectifier systems, regenerative braking drives, medium-voltage UPS inputs, and grid-tied energy storage converters requiring stable component supply across multi-year industrial equipment lifecycles.

Supply support for TDB6HK180N22RRPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's EconoPACK™2 power module product line, designed specifically for cost-optimized, thermally robust half-controlled converter stages in industrial motor drives and energy conversion systems.

FAQ

What is the maximum allowable heatsink temperature for continuous operation?

The module is qualified for continuous operation with a maximum baseplate temperature (TBPmax) of 125 °C. This corresponds to a heatsink temperature ≤125 °C when using the IFX pre-applied TIM and proper mounting torque (3–6 Nm on M5 screws). Exceeding this limit risks accelerated aging of the Al2O3 substrate and reduced short-circuit withstand time.

Can the thyristor and IGBT sections be driven from the same gate driver IC?

No - thyristors require low-energy, single-pulse gate triggers (70 mA, 1.5 V, 2 µs delay), while IGBTs need continuous ±20 V-rated drivers with 0.91 Ω external gate resistors for controlled dv/dt. Mixing drive schemes risks misfiring thyristors or incomplete IGBT turn-on; separate isolated gate driver channels are mandatory.

Is PressFIT mounting compatible with standard aluminum heatsinks?

Yes - PressFIT pins are designed for direct insertion into machined copper or aluminum heatsinks with compliant M5 threaded inserts or press-fit receptacles. The 3–6 Nm torque specification ensures mechanical retention without solder or thermal epoxy, but surface flatness must be ≤30 µm and hardness ≥60 HB to prevent pin deformation during installation.

Does the pre-applied TIM remain effective after multiple thermal cycles?

Yes - the IFX TIM is qualified for ≥1000 thermal cycles between −40 °C and 125 °C per IEC 60068-2-14. Its silicone-based formulation maintains adhesion and thermal conductivity (≥1.5 W/m·K) without pump-out or dry-out, provided mounting torque remains within 3–6 Nm and no lateral shear forces are applied to the module during operation.

TDB6HK180N22RRPB11BPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
ECOPACK®2
Package/Case:
Module
Packaging:
Tray
Product Status:
Active
Structure:
Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number of SCRs, Diodes:
3 SCRs, 3 Diodes
Voltage - Off State:
2.2 kV
Current - On State (It (AV)) (Max):
-
Current - On State (It (RMS)) (Max):
-
Voltage - Gate Trigger (Vgt) (Max):
1.5 V
Current - Gate Trigger (Igt) (Max):
70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm):
-
Current - Hold (Ih) (Max):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount

TDB6HK180N22RRPB11BPSA1 FAQ

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Please submit a Request for Quotation (RFQ) for TDB6HK180N22RRPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TDB6HK180N22RRPB11BPSA1 reliable?

The price and inventory of TDB6HK180N22RRPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TDB6HK180N22RRPB11BPSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TDB6HK180N22RRPB11BPSA1 transactions.

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TDB6HK180N22RRPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TDB6HK180N22RRPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TDB6HK180N22RRPB11BPSA1?

For technical support, including TDB6HK180N22RRPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TDB6HK180N22RRPB11BPSA1 requirements.

6.How does Aetrix verify that TDB6HK180N22RRPB11BPSA1 is sourced from the original manufacturer or authorized distributors?

All TDB6HK180N22RRPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TDB6HK180N22RRPB11BPSA1 meets industry standards.

7.What is the process for return or replacement of TDB6HK180N22RRPB11BPSA1?

All TDB6HK180N22RRPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with TDB6HK180N22RRPB11BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TDB6HK180N22RRPB11BPSA1 part is unused and in its original packaging.

Return procedure for TDB6HK180N22RRPB11BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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