Infineon Technologies TT104N12KOFKHPSA1

Overview

TT104N12KOFKHPSA1 from Infineon Technologies is a phase-control thyristor module with dual anti-parallel thyristor configuration in an industrial-standard press-pack package, rated for 1200 V repetitive peak off-state voltage (VDRM/VRRM), 102 A average on-state current at TC = 85°C, and 2050 A non-repetitive surge current (ITSM). It features electrically insulated baseplate, pressure-contact die attachment, and is designed for high-reliability power control in industrial drive rectifiers and soft starters.

For engineers reviewing the TT104N12KOFKHPSA1 datasheet, TT104N12KOFKHPSA1 pinout, TT104N12KOFKHPSA1 application, or TT104N12KOFKHPSA1 equivalent, key selection criteria include verified thermal resistance (RthJC = 0.35 K/W per module), gate trigger parameters (IGT ≤ 120 mA, VGT ≤ 1.4 V), critical dv/dt rating (1000 V/µs), and validated crowbar and static transfer switch performance under 140°C junction temperature limits.

Technical Context

This thyristor module implements a dual anti-parallel configuration enabling bidirectional AC phase control without external reverse-blocking devices. Its pressure-contact construction ensures stable thermal interface and low parasitic inductance, supporting high di/dt (150 A/µs) and dv/dt (1000 V/µs) immunity during commutation in six-pulse bridge (B6) and two-pulse bridge (B2) topologies.

Thermal design relies on its 0.35 K/W junction-to-case resistance (per module, DC) and 0.05 K/W case-to-heatsink resistance, enabling operation up to 130°C case temperature with validated transient thermal impedance ZthJC data for 10 ms to 100 s pulse durations. Gate drive requires ≥0.6 A peak trigger current with <3 µs delay time under standardized test conditions.

Key Specifications

Pinout & Package

TT104N12KOFKHPSA1 uses a press-pack industrial module package with electrically insulated aluminum nitride (AlN) baseplate, 20 mm thickness, and M1/M2 screw terminals per IEC 61140 Class 1 insulation. Mechanical mounting torque: 4 Nm ±15% (M1); electrical terminal torque: 4 Nm ±10% (M2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TD104N12KOFKHPSA1 and TT104N14KOFKHPSA1, TT104N12KOFKHPSA1 offers optimal cost-performance balance for standard 690 VAC industrial systems where 1200 V blocking and 102 A continuous rating meet design margins without over-specifying voltage headroom.

Availability

TT104N12KOFKHPSA1 is available at Aetrix Electronics and suitable for soft starters, drive rectifiers, crowbar protection circuits, and static transfer switches requiring stable component supply across multi-year industrial equipment lifecycles.

Supply support for TT104N12KOFKHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's high-power thyristor module product line, engineered specifically for ruggedized AC power control in industrial motor drives, UPS systems, and grid-tied energy infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (Tc op) is +130°C, as specified in the thermal properties section. Operation at this temperature requires derating of ITAVM according to the published ITAVM vs. TC curve and must account for total power dissipation including conduction and switching losses. Heatsink design must ensure RthCH ≤ 0.05 K/W to maintain safe junction temperature below 140°C under full load.

Does TT104N12KOFKHPSA1 require external snubbers in a B6 rectifier application?

Yes-external RC snubbers are required due to its (dv/dt)cr rating of 1000 V/µs. In a six-pulse bridge with inductive loads, voltage transients during commutation can exceed this limit. Snubber design must limit peak dv/dt across each thyristor to ≤800 V/µs, using values derived from measured circuit stray inductance and expected di/dt during turn-off.

How is gate drive isolation implemented in this module?

Gate terminals G1 and G2 are electrically isolated from main terminals (A1/K1/A2/K2) and the insulated AlN baseplate. Isolation is achieved via internal creepage distance ≥12.5 mm and reinforced insulation rated for 2.5 kV RMS (50 Hz, 1 min), allowing direct connection to optocoupled or transformer-isolated gate drivers without additional barrier components.

Can TT104N12KOFKHPSA1 be used in parallel configurations?

No-parallel operation is not recommended. The module lacks integrated current-sharing features such as matched dynamic parameters or integrated balancing resistors. Parallel use would risk thermal runaway due to parameter spread in V(TO) and rT, even with external ballasting. For higher current, use higher-rated modules (e.g., TT162N) or multi-module systems with active current balancing.