Infineon Technologies TT104N14KOFHPSA2

Overview

TT104N14KOFHPSA2 from Infineon Technologies is a phase-control thyristor module with dual 1400 V V_DRM/V_RRM, 102 A average on-state current (T_C = 85°C), 2050 A non-repetitive surge current, and 0.35 K/W junction-to-case thermal resistance. It employs pressure-contact technology for high reliability in industrial power control circuits such as soft starters and static transfer switches.

For engineers reviewing the TT104N14KOFHPSA2 datasheet, TT104N14KOFHPSA2 pinout, TT104N14KOFHPSA2 application, or TT104N14KOFHPSA2 equivalent, key selection criteria include its 1400 V blocking voltage, 102 A thermal current rating, electrically insulated baseplate, 150 µs turn-off time, and compatibility with 2- and 6-pulse bridge rectifier topologies.

Technical Context

This thyristor module integrates two inverse-parallel silicon chips in a single industrial-standard package with electrically isolated AlN-ceramic baseplate. It supports line-commutated operation with critical dv/dt capability of 1000 V/µs and di/dt rating of 150 A/µs, enabling robust triggering in high-noise drive applications.

The device operates with gate trigger current ≤120 mA and holding current ≤200 mA, and features a threshold voltage (V_T0) of 0.85 V and slope resistance (r_T) of 2.43 mΩ at T_vj = 140°C - parameters directly defining conduction loss and thermal design margin in continuous-duty controllers.

Key Specifications

Pinout & Package

TT104N14KOFHPSA2 uses an industrial-standard press-pack module package with electrically insulated AlN ceramic baseplate (20 mm thick), rated for 2.5 kV RMS insulation test voltage. Mechanical mounting torque: 4 Nm (±15%); terminal connection torque: 4 Nm (±10%). Weight: 160 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TD104N14KOFHPSA2 and TT104N14KOIHPSA2, TT104N14KOFHPSA2 delivers superior blocking voltage headroom, higher surge robustness, and best-in-class thermal resistance with certified 2.5 kV isolation - making it the optimal choice for mission-critical industrial power control.

Availability

TT104N14KOFHPSA2 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, crowbar protection circuits, and static transfer switches requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for TT104N14KOFHPSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

TT104N14KOFHPSA2 belongs to Infineon's high-power thyristor module product line designed specifically for ruggedized AC power control in industrial motor drives, energy infrastructure, and uninterruptible power systems.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The maximum junction temperature (T_{vj max}) is 140°C. This value defines the upper thermal limit for silicon operation and directly constrains allowable power dissipation. Using the specified R_thJC = 0.35 K/W, designers must ensure case temperature stays ≤85°C at 102 A to maintain 55°C safety margin - requiring appropriate heatsink sizing and forced-air or liquid cooling depending on ambient conditions.

Can TT104N14KOFHPSA2 be used in a 6-pulse bridge configuration?

Yes - TT104N14KOFHPSA2 is qualified for both 2-pulse (B2) and 6-pulse (B6) bridge rectifier topologies. The datasheet provides dedicated derating curves for ID vs. P_tot under B6 operation, confirming 102 A average current capability with proper heatsinking and R_thCA ≤ 0.2 K/W. Gate drive must be synchronized across all six arms.

What gate drive requirements must be met for reliable triggering?

Gate trigger current must reach ≥0.6 A within 20 µs (I_L = 620 mA max), with V_GT ≤ 1.4 V and I_GT ≤ 120 mA at 25°C. Recommended gate pulse energy is ≥100 mJ, and gate-cathode impedance should be ≤10 Ω to ensure fast, noise-immune turn-on. Isolated gate drivers with ≥1500 V isolation are mandatory due to the insulated baseplate architecture.

How does the pressure-contact construction improve reliability versus soldered modules?

Pressure-contact construction eliminates thermomechanical stress points from solder joints and aluminum wire bonds. Under thermal cycling (−40°C to +130°C), this yields >10× longer lifetime than conventional modules, verified by accelerated life testing. It also prevents bond-wire fusing during 2050 A surge events and maintains stable V_T0 and r_T over 10+ years of continuous operation.