Infineon Technologies TT160N18SOFHPSA1

Overview

TT160N18SOFHPSA1 from Infineon Technologies is a phase-control thyristor module designed for high-power AC line switching in industrial power electronics. It delivers 160 A average on-state current (ITAVM) at TC = 85 °C, 1800 V repetitive peak off-state voltage (VDRM/VRRM), and 5200 A non-repetitive surge current (ITSM), operating up to 125 °C junction temperature in soft starter and UPS rectifier applications.

For engineers reviewing the TT160N18SOFHPSA1 datasheet, TT160N18SOFHPSA1 pinout, TT160N18SOFHPSA1 application, or TT160N18SOFHPSA1 equivalent, key selection criteria include verified thermal resistance (RthJC = 0.145 K/W), gate trigger parameters (IGT ≤ 145 mA, VGT ≤ 2.5 V), and electrically insulated baseplate compliance with IEC61140 Class 1 insulation.

Technical Context

This dual-thyristor module uses solder-bond technology and an industrial-standard package with electrically isolated Al₂O₃ ceramic baseplate. Its design supports forced-commutated turn-off (tq typ. 320 µs) and withstands critical dv/dt up to 1000 V/µs and di/dt up to 100 A/µs under specified gate drive conditions.

The module operates in 180° conduction mode with DC and sinusoidal current waveforms, exhibiting a maximum on-state voltage of 1.82 V at 500 A and junction temperature, and a threshold voltage (VT0) of 1.1 V with slope resistance rT = 0.99 mΩ - enabling precise conduction loss modeling in rectifier and power controller designs.

Key Specifications

Pinout & Package

Package: Industrial-standard press-pack thyristor module with electrically insulated Al₂O₃ ceramic baseplate, M1/M2 terminal mounting (5 Nm torque), 34 mm baseplate width, and 165 g weight. Designed for bolt-down heatsink integration with creepage distance ≥10 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TD160N18SOF and TT160N16SOF, TT160N18SOFHPSA1 provides integrated dual-arm topology for compact bridge designs and 1800 V blocking headroom essential for 690 VAC industrial drives - balancing layout efficiency, safety margin, and thermal predictability.

Availability

TT160N18SOFHPSA1 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, and static switches requiring stable component supply, long-lifecycle support, and certified isolation performance in harsh industrial environments.

Supply support for TT160N18SOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's high-power thyristor module product line, engineered specifically for robust phase-angle control in heavy-duty AC power conditioning - emphasizing thermal reliability, isolation integrity, and gate drive simplicity in mission-critical infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation?

The module supports continuous operation up to TC = 85 °C for rated ITAVM = 160 A, with derating required above that point. The maximum case temperature is constrained by the 125 °C junction limit and RthJC = 0.145 K/W; at 160 A, ΔTJC = 23.2 K, allowing TC ≤ 101.8 °C if ambient and heatsink design permit - but datasheet ratings assume TC = 85 °C as the thermal reference condition.

Does TT160N18SOFHPSA1 require snubber circuits?

Snubbers are recommended for inductive loads due to its 1000 V/µs (dv/dt)cr rating. While the module tolerates this rate under ideal gate drive, real-world line transients and commutation overshoot exceed it - especially in B6 rectifiers with transformer leakage inductance. RC snubbers across each arm reduce stress and prevent false turn-on, improving long-term reliability.

Can this module be used in parallel configurations?

No - the TT160N18SOFHPSA1 is not characterized or qualified for paralleling. Its dynamic parameters (e.g., tq, di/dt capability, gate threshold) exhibit unit-to-unit variation that prevents balanced current sharing without active current-balancing circuitry. Infineon specifies single-module operation only; higher current must be achieved via higher-rated modules (e.g., TT250N18SOF) or multi-module systems with individual gate control.

What is the gate drive power requirement for reliable triggering?

Each gate requires ≥1 A peak trigger current with diG/dt ≥1 A/µs and pulse width ≥20 µs. The maximum gate trigger voltage is 2.5 V, and peak gate power must stay within PGM limits: 20 W/10 ms, 60 W/500 µs, or 120 W/30 µs. Exceeding these risks gate junction damage; practical designs use pulse transformers or opto-triac drivers with current-limiting resistors to meet these constraints.