Infineon Technologies TT162N08KOFHPSA1

Overview

TT162N08KOFHPSA1 from Semikron is a phase-control thyristor module with dual anti-parallel SCR configuration, rated for 1600 V repetitive peak off-state voltage (VDRM/VRRM), 162 A average on-state current (ITAVM) at TC = 85°C, and 260 A RMS on-state current (ITRMSM). It delivers 1.41 V maximum on-state voltage at 500 A and 125°C junction temperature, and is designed for industrial AC power control in medium-voltage motor drives and DC power supplies.

For engineers reviewing the TT162N08KOFHPSA1 datasheet, TT162N08KOFHPSA1 pinout, TT162N08KOFHPSA1 application, or TT162N08KOFHPSA1 equivalent, key selection criteria include critical dv/dt rating (1000 V/µs), surge current capability (4400 A), thermal resistance (0.096 °C/W per arm, DC), gate trigger parameters (IGT ≤ 150 mA, VGT ≤ 2 V), and isolation voltage (3.0 kV RMS, 1 sec).

Technical Context

This thyristor module implements a press-pack, double-sided cooled design with silicon pellets mounted on aluminum nitride (AlN) ceramic isolation. Its dual SCR structure enables bidirectional conduction without external reverse-blocking diodes, supporting B2 and B6 bridge topologies.

The device operates under forced or natural cooling with validated thermal impedance models (ZthJC, ZthCA) for transient thermal analysis. Gate triggering follows IEC 747-6 standards with defined latching (IL ≤ 800 mA) and holding (IH ≤ 200 mA) currents, and commutated turn-off time (tq typ. 200 µs) under specified circuit conditions.

Key Specifications

Pinout & Package

TT162N08KOFHPSA1 uses a press-pack module package with isolated baseplate, aluminum nitride (AlN) internal insulation, and M1 mechanical mounting (6 Nm ±15%). Terminals are arranged as two independent arms: each arm has anode (A), cathode (K), and gate (G) connections conforming to DIN 46244 A standard (2.8 × 0.8 mm flat blade).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with SKKT 162/16 E, TT162N08KOFHPSA1 offers +12 A ITAVM and +0.5 kV isolation, enabling higher power density and enhanced safety in 690 V AC systems; versus TT162N16KOFHPSA1, it shares identical performance-only differing in part number suffix denoting manufacturing batch or test grade.

Availability

TT162N08KOFHPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, DC power supplies, heating control systems, and reactive power compensation requiring stable component supply and long-term lifecycle support.

Supply support for TT162N08KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German manufacturer specializing in power semiconductor modules, known for high-reliability solutions in industrial, energy, and traction applications.

This part belongs to Semikron's TT-series phase-control thyristor modules, engineered for high-current AC power conversion in demanding industrial environments with emphasis on thermal robustness and gate drive simplicity.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The maximum junction temperature (Tvj max) is 125°C. This value sets the upper limit for thermal design: combined RthJC (0.096 °C/W) and RthCH (0.03 °C/W) must ensure that power dissipation (calculated from ITAVM and vT/rT) does not exceed the allowable ΔT from case to junction. Exceeding 125°C risks irreversible degradation of the silicon die and AlN isolation.

Can TT162N08KOFHPSA1 be used in natural convection cooling?

Yes, but only at derated current levels. With natural cooling (KM17 heatsink, 3 modules per heatsink), the datasheet confirms operation up to ITAVM = 162 A only when RthCA ≤ 0.192 °C/W per arm. Real-world natural convection typically yields RthCA > 0.5 °C/W, requiring ITAVM reduction to ~60–80 A to maintain Tvj ≤ 125°C.

What gate drive requirements must be met for reliable turn-on?

Gate trigger current must reach ≥0.6 A with diG/dt ≥0.6 A/µs for ≤20 µs duration, and gate trigger voltage must exceed 2 V under 6 V anode-cathode voltage. The latching current (IL ≤ 800 mA) must be sustained until main current exceeds holding level (IH ≤ 200 mA); insufficient gate charge causes misfiring or partial conduction.

How does the 1000 V/µs dv/dt rating impact snubber design?

A 1000 V/µs critical dv/dt means the module can tolerate voltage transients up to that rate without spurious turn-on. Snubbers must limit dv/dt across the device to below this threshold during commutation. For example, with 100 nF snubber capacitance and 1 Ω resistor, the RC time constant yields ~10 V/µs-well within margin-but layout parasitics may require tighter optimization in high-di/dt systems.