Infineon Technologies TT162N12KOFHPSA1

Overview

TT162N12KOFHPSA1 from Semikron is a phase-control thyristor module with dual anti-parallel SCR configuration, rated for 1200 V repetitive peak off-state voltage (VDRM/VRRM), 162 A average on-state current (ITAVM) at TC = 85°C, and 260 A RMS on-state current (ITRMSM). It delivers 1.41 V maximum on-state voltage at 500 A and 125°C junction temperature, and is designed for industrial AC power control in medium-power rectifier and motor drive systems.

For engineers reviewing the TT162N12KOFHPSA1 datasheet, TT162N12KOFHPSA1 pinout, TT162N12KOFHPSA1 application, or TT162N12KOFHPSA1 equivalent, key selection criteria include verified commutation-safe turn-off time (tq = 200 µs), critical dv/dt rating (500 V/µs), thermal resistance (RthJC = 0.096 °C/W per arm), gate trigger parameters (IGT ≤ 150 mA, VGT ≤ 2 V), and isolation test voltage (2.5 kV RMS).

Technical Context

This dual SCR module implements forced-commutated phase-angle control in B2 (two-pulse) and B6 (six-pulse) bridge configurations. Its 200 µs typical circuit commutated turn-off time (tq) and 500 V/µs critical off-state voltage rise rate (dv/dt)cr enable reliable operation under inductive loads with controlled zero-crossing switching.

The module integrates pressure-contact silicon pellets on an AlN ceramic substrate, delivering low thermal resistance (0.096 °C/W per arm, DC) and high surge capability (5200 A ITSM at 25°C, 10 ms). Gate drive requires precise timing: max 3 µs gate-controlled delay (tgd) and ≥800 mA latching current (IL) to ensure robust turn-on under worst-case conditions.

Key Specifications

Pinout & Package

TT162N12KOFHPSA1 uses a press-pack module package with isolated baseplate, featuring three main terminals (A1, K1, A2/K2) and two gate terminals (G1, G2) arranged for dual anti-parallel SCR operation. The housing is mechanically secured via M1 and M2 screws (6 Nm torque), with DIN 46244 A 2.8 × 0.8 control terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with SKKT 106/12 E, TT162N12KOFHPSA1 provides +53% average current capacity and lower thermal resistance for denser power stages; versus TT162N14KOFHPSA1, it trades 200 V blocking margin for optimized cost in 400–480 V AC applications.

Availability

TT162N12KOFHPSA1 is available at Aetrix Electronics and suitable for industrial AC motor drives, medium-power rectifier bridges, phase-controlled heating systems, and reactive power compensation requiring stable component supply across multi-year production cycles.

Supply support for TT162N12KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability modules for industrial, renewable energy, and traction applications, with ISO/TS 16949 certification and vertical integration from wafer to module assembly.

This part belongs to Semikron's TT-series phase-control thyristor modules, engineered for ruggedized AC power control in harsh environments-specifically targeting applications demanding high surge current, long thermal cycle life, and certified isolation.

FAQ

What is the maximum allowable junction temperature for TT162N12KOFHPSA1?

The maximum junction temperature (Tvj max) is 125°C, validated per IEC 60747-6. This limit governs thermal design: at ITAVM = 162 A and TC = 85°C, the module maintains safe operation with RthJC = 0.096 °C/W per arm and RthCH = 0.03 °C/W. Exceeding 125°C risks accelerated parameter drift and reduced lifetime.

Does TT162N12KOFHPSA1 require forced cooling?

No-natural cooling is viable at reduced current: 162 A ITAVM assumes TC = 85°C with forced airflow (e.g., Papst 4650N fan on KM17 heatsink). For natural convection, derating to ~90 A is required per thermal curves on page 7 of the datasheet, based on ZthCA data showing 1.71 °C/W initial impedance under still-air conditions.

How is gate triggering configured for anti-parallel operation?

TT162N12KOFHPSA1 has independent G1 and G2 terminals with opposite polarity relative to their respective cathodes. G1 triggers SCR1 (A1→K1); G2 triggers SCR2 (A2→K2), where A2/K2 is the common terminal. Each gate requires ≥0.6 A pulse with di/dt ≥ 0.6 A/µs and ≤3 µs delay (tgd) to achieve ≥800 mA latching current (IL) under worst-case Tvj = 125°C.

Can TT162N12KOFHPSA1 be used in a single-phase B2 bridge?

Yes-it is explicitly rated for B2 two-pulse bridge operation, as shown in Figure 8 (page 8) of the datasheet. In this configuration, A1 and K1 serve as one AC input/output pair, while A2/K2 acts as the center-tap return. The module supports up to 350 A peak output current in B2 mode with RthCA = 0.1 °C/W, confirmed by the "Maximaler Strom bei B2" curve.