Infineon Technologies TT162N16KOFAHPSA1

Overview

TT162N16KOFAHPSA1 from Semikron is a phase-control thyristor module with dual anti-parallel SCR configuration, rated for 1600 V repetitive peak off-state voltage (VDRM/VRRM), 162 A average on-state current (ITAVM) at TC = 85°C, and 260 A RMS on-state current (ITRMSM). It is designed for high-power AC line commutated applications including industrial motor speed control, DC traction converters, and medium-voltage rectifier bridges.

For engineers reviewing the TT162N16KOFAHPSA1 datasheet, TT162N16KOFAHPSA1 pinout, TT162N16KOFAHPSA1 application, or TT162N16KOFAHPSA1 equivalent, key selection criteria include gate trigger current (IGT ≤ 150 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.096 °C/W per arm), and isolation test voltage (3.0 kV RMS).

Technical Context

This thyristor module implements a press-pack Si pellet design with AlN internal insulation and integrated thermal interface material (TIM), enabling high-reliability operation in forced-air or natural-cooled industrial drives. Its dual-arm anti-parallel structure supports bidirectional conduction without external reverse-blocking diodes.

The device features a low on-state voltage drop (vT ≤ 1.41 V at 500 A, Tvj max), fast gate-controlled delay time (tgd ≤ 3 µs), and robust commutation capability (circuit commutated turn-off time tq ≈ 200 µs at rated conditions), making it suitable for B2 and B6 bridge topologies operating up to 50/60 Hz.

Key Specifications

Pinout & Package

TT162N16KOFAHPSA1 uses a press-pack module package with isolated copper baseplate, AlN ceramic insulation, and M1/M2 screw terminals. Mechanical mounting torque: 6 Nm ±15% (M1), electrical terminal torque: 6 Nm ±10% (M2). Weight: 310 g. Creepage distance: 15 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with SKKT 162/16 E and IXYS M577-16IO12, TT162N16KOFAHPSA1 offers superior thermal performance per unit area (0.096 °C/W with TIM), enhanced isolation (3.0 kV), and optimized dv/dt immunity (1000 V/µs), making it preferred for compact, high-reliability industrial drives where thermal interface consistency and snubberless operation are critical.

Availability

TT162N16KOFAHPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, DC traction converters, medium-voltage rectifiers, and induction heating supplies requiring stable component supply and long lifecycle support.

Supply support for TT162N16KOFAHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability modules for industrial, traction, and renewable energy applications since 1951.

This part belongs to Semikron's TT-series phase-control thyristor modules, engineered for rugged line-commutated AC/DC conversion in harsh environments where thermal stability, isolation integrity, and gate drive simplicity are essential.

FAQ

What is the maximum junction temperature and how does it affect derating?

The maximum junction temperature (Tvj max) is 125°C. Derating must be applied when case temperature exceeds 85°C - ITAVM decreases linearly to zero at 125°C. For example, at TC = 100°C, ITAVM reduces to ~115 A. Thermal design must ensure RthJC + RthCH + RthHA keeps Tvj ≤ 125°C under worst-case load and ambient conditions.

Can TT162N16KOFAHPSA1 be used without external snubbers?

Yes - its critical dv/dt rating of 1000 V/µs allows snubberless operation in most 50/60 Hz phase-control applications. However, snubbers are still recommended for high-di/dt loads (e.g., short-circuit events or highly inductive loads) to limit voltage overshoot beyond VDSM (1600 V) and protect gate integrity.

What gate drive requirements must be met for reliable triggering?

A minimum gate trigger current of 0.6 A (pulse) with diG/dt ≥ 0.6 A/µs and pulse width ≥ 20 µs is required for latching (IL ≤ 800 mA). Steady-state gate voltage must stay below VGT max (2 V) and non-trigger voltage VGD max (0.25 V) to avoid spurious turn-on. A dedicated isolated gate driver with 2 W peak output is recommended.

How does the integrated TIM impact thermal interface design?

The factory-applied TIM eliminates variability from manual paste application and ensures repeatable RthCH ≤ 0.06 °C/W per arm. It requires storage between +5°C and +40°C and must not be removed or reworked. Heatsink flatness ≤ 30 µm and surface finish Ra ≤ 0.8 µm are mandatory to maintain TIM performance and avoid hot spots.