Infineon Technologies TT162N16KOFHPSA1

Overview

TT162N16KOFHPSA1 from Semikron is a phase-control thyristor module configured as a dual reverse-blocking (B2) or six-pulse bridge (B6) power switching device, rated for 1600 V repetitive peak off-state voltage (VDRM/VRRM), 162 A average on-state current (ITAVM) at TC = 85°C, and 260 A RMS on-state current (ITRMSM). It delivers precise AC power regulation in industrial motor drives and high-power rectifiers.

For engineers reviewing the TT162N16KOFHPSA1 datasheet, TT162N16KOFHPSA1 pinout, TT162N16KOFHPSA1 application, or TT162N16KOFHPSA1 equivalent, key selection criteria include critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.096 °C/W per arm), gate trigger current (≤150 mA), and surge current capability (4400 A @ Tvj max).

Technical Context

This thyristor module implements a pressure-contact silicon pellet design with aluminum nitride (AlN) internal insulation, enabling high-reliability operation under forced-air or natural convection cooling. Its dual-arm configuration supports both B2 two-pulse and B6 six-pulse bridge topologies without external series/parallel stacking.

The device features a 125 °C maximum junction temperature, 200 µs typical circuit-commutated turn-off time (tq), and gate-controlled delay time ≤3 µs-enabling precise phase-angle control in line-synchronized AC applications up to 50/60 Hz.

Key Specifications

Pinout & Package

TT162N16KOFHPSA1 is housed in a press-fit, insulated metal-base package with integrated AlN ceramic isolation and M1/M2 screw terminals. Dimensions and mounting layout conform to Semikron's standard SKiiP®-compatible mechanical outline (see datasheet page 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with SKKT 162/16 E and MDA162-16N1, TT162N16KOFHPSA1 offers superior dv/dt immunity and pressure-contact longevity-critical for high-dI/dt industrial environments-while maintaining identical voltage/current ratings and footprint compatibility with SKiiP®-style mounting.

Availability

TT162N16KOFHPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-power rectifiers, welding power supplies, and reactive power compensation systems requiring stable component supply across multi-year production cycles.

Supply support for TT162N16KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability modules for industrial and energy infrastructure applications since 1951.

This part belongs to Semikron's TT-series phase-control thyristor modules, engineered for ruggedized AC power conversion in harsh environments including factory automation, metallurgy, and grid-scale power conditioning.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum case temperature (TC) is not fixed-it depends on ITAVM and conduction angle. At 162 A average current and 180° conduction (DC), TC must not exceed 85°C per datasheet derating curves (page 7). With forced cooling and TIM, TC may reach 105°C at reduced load, but junction temperature must stay ≤125°C.

Does TT162N16KOFHPSA1 require a heatsink, and what thermal interface material is recommended?

Yes-a heatsink is mandatory. With RthCH ≤ 0.06 °C/W (per arm) using thermal interface material (TIM), Semikron specifies silicone-based grease or phase-change pads meeting ASTM D5470 standards. Mounting torque for thermal screws is 6 Nm ±15%, and creepage distance must remain ≥15 mm in PCB layout.

Can this module be used in anti-parallel configuration for AC switching?

Yes-TT162N16KOFHPSA1 supports anti-parallel connection for bidirectional AC switching. Each arm has symmetrical VDRM/VRRM (1600 V) and identical gate characteristics. When used this way, total module current rating remains 162 A average per arm, with gate drive circuits isolated and referenced to respective cathodes.

What is the gate drive power requirement per thyristor arm?

Each gate requires ≤150 mA peak trigger current at ≤2 V, resulting in ≤300 mW instantaneous power per pulse. For 50 Hz operation with 10 µs pulse width and 10% duty cycle, average gate power is <300 µW. A 12 V, 500 mA isolated gate driver with 1 µF local decoupling meets all timing and energy requirements.