Infineon Technologies TT180N12KOFHPSA1

Overview

TT180N12KOFHPSA1 from Infineon Technologies is a phase-control thyristor module configured as a dual reverse-blocking (B2) or six-pulse bridge (B6) power switching device, rated for 1200 V repetitive peak off-state voltage (VDRM/VRRM), 180 A average on-state current (ITAVM) at TC = 85°C, and 285 A RMS on-state current (ITRMSM). It delivers 1.41 V maximum on-state voltage at 500 A and 130°C junction temperature, with critical dv/dt capability of 1000 V/µs and di/dt rating of 150 A/µs - deployed in industrial AC motor drives and medium-voltage rectifier systems.

For engineers reviewing the TT180N12KOFHPSA1 datasheet, TT180N12KOFHPSA1 pinout, TT180N12KOFHPSA1 application, or TT180N12KOFHPSA1 equivalent, key selection criteria include verified thermal resistance (RthJC = 0.096 °C/W per arm, DC), gate trigger parameters (IGT ≤ 150 mA, VGT ≤ 2 V), surge current capacity (ITSM = 4800 A, 10 ms), and isolation rating (VISOL = 2.5 kV RMS, 1 min).

Technical Context

This thyristor module integrates two press-pack silicon pellets with aluminum nitride (AlN) internal insulation in a single housing, supporting both half-controlled B2 and fully controlled B6 bridge topologies. Its gate control interface complies with DIN IEC 747-6, requiring precise timing (tgd ≤ 3 µs) and robust immunity to false triggering (IGD ≤ 10 mA, VGD ≤ 0.25 V at 0.5 VDRM).

Thermal design relies on validated transient impedance models (ZthJC analytical fit with 7 RC elements) and dual cooling modes: natural convection (KM17 heatsink, 45 W) and forced-air (Papst 4650N fan), enabling stable operation across -40°C to +130°C case temperature range with RthCH ≤ 0.03 °C/W per module.

Key Specifications

Pinout & Package

TT180N12KOFHPSA1 uses a press-pack module package with isolated copper baseplate, AlN ceramic insulation, and M1/M2 screw terminals. Mechanical mounting torque: 6 Nm ±15% (M1), electrical terminal torque: 6 Nm ±10% (M2). Weight: 310 g. Creepage distance: 15 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT180N12KOFHPSA1, TT180N14KOFHPSA1 trades no performance loss for higher voltage margin, while TT250N12KOFHPSA1 increases current capacity at identical voltage rating - both retain pin-compatible mounting and gate drive compatibility, enabling drop-in upgrades in existing layouts.

Availability

TT180N12KOFHPSA1 is available at Aetrix Electronics and suitable for industrial AC motor drives, medium-voltage rectifier systems, uninterruptible power supplies (UPS), and reactive power compensation requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for TT180N12KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's "Thyristor Modules" product line, engineered for high-reliability, high-power phase-control applications in industrial energy conversion, traction, and grid infrastructure.

FAQ

What is the maximum allowable junction temperature for TT180N12KOFHPSA1?

The maximum junction temperature (Tvj max) is 130°C, as specified in the datasheet's thermal properties table. This limit applies under all operating conditions including surge and repetitive conduction. Exceeding this value risks irreversible degradation of the silicon die and AlN insulation integrity.

Does TT180N12KOFHPSA1 require forced gate drive or can it operate with simple DC-triggered pulses?

It supports standard DC-triggered gate pulses meeting IGT ≤ 150 mA and VGT ≤ 2 V at 25°C, with minimum pulse width of 20 µs. No active gate driver IC is required, though snubberless operation demands strict adherence to dv/dt limits and gate loop inductance <100 nH.

How is thermal resistance defined - per module or per arm?

RthJC is specified per arm (0.096 °C/W DC), not per module. Since TT180N12KOFHPSA1 contains two independent arms, total module dissipation must be calculated arm-by-arm, and heatsink design must accommodate combined thermal load with RthCH ≤ 0.03 °C/W per module.

Can TT180N12KOFHPSA1 be used in asymmetrical half-controlled rectifiers?

Yes - its dual reverse-blocking structure allows use in asymmetrical configurations such as single-phase B2 bridges with freewheeling diodes. The independent gate terminals (G1/G2) and isolated anode/cathode pairs enable flexible connection topologies without external series diodes.