Infineon Technologies TT310N26KOFHPSA1

Overview

TT310N26KOFHPSA1 from Infineon Technologies is a phase-control thyristor module rated for 2600 V repetitive peak off-state voltage (V_DRM/V_RRM), 310 A average on-state current (I_TAVM) at T_C = 85°C, and 700 A RMS on-state current (I_TRMSM). It features dual thyristor arms in press-pack construction with AlN ceramic isolation, designed for high-power AC line commutated rectification and motor speed control in industrial medium-voltage drives.

For engineers reviewing the TT310N26KOFHPSA1 datasheet, TT310N26KOFHPSA1 pinout, TT310N26KOFHPSA1 application, or TT310N26KOFHPSA1 equivalent, key selection criteria include verified gate trigger current (I_GT ≤ 250 mA), critical dv/dt rating (1000 V/µs), junction-to-case thermal resistance (0.0373 °C/W per arm), and surge current capability (9000 A, t_P = 10 ms).

Technical Context

This device implements a dual-arm, reverse-blocking thyristor configuration optimized for B2 (two-pulse) and B6 (six-pulse) bridge topologies. Its press-pack Si-pellet design with mechanical clamping ensures low contact resistance (r_T = 0.86 mΩ) and stable thermal performance under high di/dt (120 A/µs) and dv/dt stress.

Thermal management relies on direct copper baseplate mounting with specified case-to-heatsink resistance (R_thCH ≤ 0.02 °C/W per arm). The module supports natural and forced cooling, with transient thermal impedance data provided for sinusoidal and rectangular conduction angles (0°–180°) to enable accurate loss and temperature modeling.

Key Specifications

Pinout & Package

TT310N26KOFHPSA1 is housed in a press-pack module with isolated copper baseplate and two electrically independent thyristor arms. Mechanical terminals are M2 (12 Nm torque) for main anode/cathode connections and DIN 46244 A (2.8 × 0.8 mm) for gate control leads. Internal isolation uses aluminum nitride (AlN) ceramic.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT310N26KOFHPSA1, TT330N22KOFHPSA1 trades 400 V blocking margin for +20 A average current, while TT122N26KOFHPSA1 retains full 2600 V rating in a thermally superior but lower-current package-enabling scalable design across 122–310 A power tiers within identical mechanical interface.

Availability

TT310N26KOFHPSA1 is available at Aetrix Electronics and suitable for industrial AC motor drives, medium-voltage rectifier systems, and high-power UPS input stages requiring stable component supply and long-lifecycle support.

Supply support for TT310N26KOFHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's "Netz-Thyristor-Modul" product line, engineered specifically for high-reliability, high-current phase-controlled rectification in industrial power conversion systems operating up to 125°C junction temperature.

FAQ

What is the maximum junction temperature and how does it affect derating?

The maximum junction temperature (T_{vj max}) is 125°C. Derating curves in the datasheet define allowable I_TAVM versus case temperature (T_C) for sinusoidal and rectangular conduction angles. At T_C = 85°C, I_TAVM = 310 A; above this, current must be linearly reduced to maintain T_vj ≤ 125°C using R_thJC = 0.0373 °C/W.

Does TT310N26KOFHPSA1 require external snubbers in B6 bridge operation?

Snubbers are not mandatory due to its high (dv/dt)_cr of 1000 V/µs and validated tq = 300 µs at full load. However, RC snubbers are recommended for systems with stray inductance > 1 µH or when operating near V_DRM limits to suppress voltage overshoot during commutation.

How is gate drive isolation implemented for dual-arm operation?

Each arm has fully isolated gate terminals (G1/K1 and G2/K2) referenced to its respective cathode. Gate drive circuits must provide independent, floating supplies referenced to each cathode potential. No shared gate reference is permitted; common-mode voltage between arms may exceed 1000 V during commutation.

What mechanical mounting torque values are specified for main and gate terminals?

Main power terminals (A1/K1, A2/K2) require M2 screws tightened to 12 Nm ±10%. Gate terminals conform to DIN 46244 A (2.8 × 0.8 mm) and must be secured with appropriate crimp or screw terminals-no torque specification is given for gate leads, but mechanical retention must prevent vibration-induced disconnection under 50 m/s² vibration per DIN EN 60068-2-6.