Infineon Technologies TT780N18KOFXPSA1

Overview

TT780N18KOFXPSA1 from Infineon Technologies is a press-pack, dual-arm phase-control thyristor module rated for 1800 V repetitive peak off-state voltage (VDRM/VRRM), 775 A average on-state current at TC = 85°C (ITAVM), and 23.5 kA non-repetitive surge current (ITSM). It features electrically insulated baseplate, pre-applied thermal interface material (TIM), and pressure-contact silicon die assembly-designed for high-reliability industrial power control in soft starters and UPS rectifiers.

For engineers reviewing the TT780N18KOFXPSA1 datasheet, TT780N18KOFXPSA1 pinout, TT780N18KOFXPSA1 application, or TT780N18KOFXPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.045 K/W per arm), critical dv/dt rating (1000 V/µs), gate trigger threshold (≤2 V), and isolation test voltage (3.6 kV RMS/1 sec).

Technical Context

This dual-thyristor module implements line-commutated phase-angle control in AC power systems, with two independent arms sharing a common insulated baseplate. Each arm supports full-wave conduction under 50/60 Hz operation, with validated turn-off capability (tq ≈ 250 µs) and robust immunity to false triggering (dv/dt ≥ 1000 V/µs, di/dt ≥ 200 A/µs).

The device uses Advanced Medium Power Technology (AMPT) with AlN ceramic insulation and pressure-contact die bonding, enabling stable operation up to 135°C junction temperature and supporting DC, 30°–180° conduction angle waveforms. Its 60 mm baseplate conforms to industrial standard mounting (M2 terminals, 12 Nm torque) and integrates TIM for optimized thermal coupling to heatsinks.

Key Specifications

Pinout & Package

TT780N18KOFXPSA1 is housed in an industrial-standard press-pack module with 60 mm × 60 mm insulated baseplate (AlN ceramic), designed for bolt-down mechanical and thermal integration. Electrical terminals are arranged as two isolated arms: each arm has anode (A), cathode (K), and gate (G) connections conforming to DIN 46244 A (2.8 × 0.8 mm flat blade).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TD780N18KOF and TT920N18KOF, TT780N18KOFXPSA1 offers optimal balance of dual-arm integration, 60 mm footprint, and 775 A rating-making it ideal for soft starters and medium-power static switches where board space and thermal interface simplicity are prioritized over maximum current density or modularity.

Availability

TT780N18KOFXPSA1 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, crowbar protection circuits, and static switches requiring stable component supply, long-lifecycle support, and certified isolation performance.

Supply support for TT780N18KOFXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

TT780N18KOFXPSA1 belongs to Infineon's High-Power Thyristor Module product line, engineered for industrial AC power control applications demanding high surge robustness, long-term thermal stability, and reinforced electrical isolation.

FAQ

What is the maximum allowable junction temperature for TT780N18KOFXPSA1?

The absolute maximum junction temperature (Tvj max) is 135°C, as specified in the official Infineon technical information document revision 3.4. This rating applies under all operating conditions including repetitive and non-repetitive stress, and must be maintained via proper heatsink design using the provided RthJC (0.045 K/W per arm) and RthCH (0.0075 K/W with TIM) values.

Does TT780N18KOFXPSA1 require external snubber circuits?

Snubbers are recommended for applications exceeding 200 A/µs di/dt or 500 V/µs dv/dt at the device terminals, especially in inductive loads like motor drives. While the device has (di/dt)cr = 200 A/µs and (dv/dt)cr = 1000 V/µs, real-world commutation transients may necessitate RC snubbers to ensure reliable turn-off and prevent false triggering in B6 rectifier configurations.

Can TT780N18KOFXPSA1 be used in parallel configurations?

No-TT780N18KOFXPSA1 is not designed for parallel operation. Its pressure-contact construction and thermal coupling to a shared baseplate make current sharing between multiple modules unreliable without active current-balancing circuitry. For higher current needs, use higher-rated variants like TT920N18KOF or multi-module B6 arrangements with individual gate drive isolation.

What is the gate drive requirement for reliable turn-on?

A minimum gate trigger current of 250 mA (IGT max) at ≤2 V (VGT max) is required at 25°C with 12 V anode-cathode voltage. Gate pulses must exceed 1 A/µs diG/dt and sustain ≥20 µs duration (tg) to ensure latching (IL max = 1500 mA). For robust operation across temperature, gate drive should deliver ≥400 mA peak into ≤10 Ω source impedance.