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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SPB35N10 G MOSFET N-CH 100V 35A TO263-3 Infineon Technologies	8,227	RFQ	Datasheet	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Tc)	10V	44mOhm @ 26.4A, 10V	4V @ 83µA	65 nC @ 10 V	±20V	1570 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2
IRFZ48NSTRRPBF MOSFET N-CH 55V 64A D2PAK Infineon Technologies	9,031	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	64A (Tc)	10V	14mOhm @ 32A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	1970 pF @ 25 V	-	3.8W (Ta), 130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF7706 MOSFET P-CH 30V 7A 8TSSOP Infineon Technologies	7,281	RFQ	Datasheet	HEXFET®	8-TSSOP (0.173", 4.40mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	22mOhm @ 7A, 10V	2.5V @ 250µA	72 nC @ 10 V	±20V	2211 pF @ 25 V	-	1.51W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-TSSOP
IRF7401TRPBF MOSFET N-CH 20V 8.7A 8SO Infineon Technologies	6,636	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	8.7A (Ta)	2.7V, 4.5V	22mOhm @ 4.1A, 4.5V	700mV @ 250µA (Min)	48 nC @ 4.5 V	±12V	1600 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRLR3714TRPBF MOSFET N-CH 20V 36A DPAK Infineon Technologies	5,801	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	36A (Tc)	4.5V, 10V	20mOhm @ 18A, 10V	3V @ 250µA	9.7 nC @ 4.5 V	±20V	670 pF @ 10 V	-	47W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
BSP295L6327HTSA1 MOSFET N-CH 60V 1.8A SOT223-4 Infineon Technologies	8,080	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	1.8A (Ta)	4.5V, 10V	300mOhm @ 1.8A, 10V	1.8V @ 400µA	17 nC @ 10 V	±20V	368 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4-21
BSP296L6327HTSA1 MOSFET N-CH 100V 1.1A SOT223-4 Infineon Technologies	9,110	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	1.1A (Ta)	4.5V, 10V	700mOhm @ 1.1A, 10V	1.8V @ 400µA	17.2 nC @ 10 V	±20V	364 pF @ 25 V	-	1.79W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4
BSP373L6327HTSA1 MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies	3,310	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	1.7A (Ta)	10V	300mOhm @ 1.7A, 10V	4V @ 1mA	-	±20V	550 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4
IPD25CN10NGBUMA1 MOSFET N-CH 100V 35A TO252-3 Infineon Technologies	8,917	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Tc)	10V	25mOhm @ 35A, 10V	4V @ 39µA	31 nC @ 10 V	±20V	2070 pF @ 50 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
IRF7821GTRPBF MOSFET N-CH 30V 13.6A 8SO Infineon Technologies	8,346	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	13.6A (Ta)	4.5V, 10V	9.1mOhm @ 13A, 10V	1V @ 250µA	14 nC @ 4.5 V	±20V	1010 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	8-SO

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