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Infineon Technologies IRF7401TRPBF
- Part No.:
- IRF7401TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7401TRPBF.pdf
- Description:
- MOSFET N-CH 20V 8.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,636
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Product details
Overview
IRF7401TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion and load switching. It features RDS(on) = 0.022 Ω @ VGS = 4.5 V, 6.9 A continuous drain current, and 30 V drain-source voltage rating - enabling use in synchronous buck converters and battery protection circuits.
For engineers reviewing the IRF7401TRPBF datasheet, IRF7401TRPBF pinout, IRF7401TRPBF application, or IRF7401TRPBF equivalent, key selection criteria include gate threshold voltage (1.5 V min), low gate charge (17 nC), body diode reverse recovery time (45 ns), and thermal resistance (RθJA = 62 °C/W).
Technical Context
This dual N-channel device integrates two matched MOSFETs in a single SO-8 package with shared source terminals - configured as a common-source pair ideal for synchronous rectification. Its logic-level gate drive (VGS(th) = 1.5–2.5 V) enables direct interfacing with 3.3 V and 5 V controllers without level-shifting.
The device uses TrenchMOS technology to achieve low RDS(on) and fast switching (td(on) = 12 ns, tf = 15 ns), while its integrated body diodes support bidirectional current flow in half-bridge topologies and provide controlled reverse recovery (Qrr = 23 nC).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 24 V rail systems with margin for transients |
| RDS(on) @ 4.5 V | 0.022 Ω - enables <1 W conduction loss at 6.9 A in compact layouts |
| ID (continuous) | 6.9 A - rated for sustained operation at TC = 100 °C |
| QG | 17 nC - reduces gate driver power demand and switching losses |
| VGS(th) | 1.5–2.5 V - ensures full enhancement with standard logic-level PWM signals |
| tr/tf | 10/15 ns - minimizes overlap loss in high-frequency (>500 kHz) converters |
| RθJA | 62 °C/W - defines thermal derating on standard 1-oz FR4 PCB with 1-in² copper pour |
Pinout & Package
SO-8 surface-mount package per JEDEC MS-012AA, 4.9 × 6.0 mm footprint, 1.27 mm lead pitch, gull-wing leads. Thermal pad not present; power dissipation relies on copper area under drain pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (Channel 1) | High-current output node; electrically tied to exposed drain tab (pins 1–4) |
| 5 | Gate (Channel 1) | Control input for first MOSFET; requires <17 nC charge for full turn-on |
| 6, 7, 8 | Source (Common) | Shared source node for both channels; return path for load current |
| - | Drain (Channel 2) | Not separately accessible - second channel shares drain pins 1–4 and source pins 6–8 |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Single-package synchronous rectifier pair eliminates layout mismatch and timing skew |
| Logic-level gate drive | Operates fully enhanced down to 3.3 V supply - compatible with microcontroller GPIOs |
| Low QGD/QG ratio | 0.41 - improves Miller immunity and reduces risk of shoot-through in half-bridge |
| Fast body diode recovery | trr = 45 ns, Qrr = 23 nC - limits voltage spikes and EMI during freewheeling |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 - no bake required before reflow |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Switch |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V point-of-load regulation in networking equipment. IC Role / Device Role: High-side and low-side switch in integrated power stage. Use Value: Dual topology reduces component count vs. discrete MOSFETs; 0.022 Ω RDS(on) cuts conduction loss by >35% vs. legacy 30 V parts. | Use Scenario: Input-side load switch controlling 20 V/5 A USB PD power path. IC Role / Device Role: Back-to-back N-MOSFET configuration for bidirectional blocking. Use Value: Shared-source architecture simplifies gate drive sequencing; 30 V rating covers full PD 3.0 range including 28 V extended modes. |
| Battery Protection Circuit | Industrial PLC I/O Module |
Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion packs (8.4 V max). IC Role / Device Role: Primary discharge FET with integrated sense path via source shunt. Use Value: Low RDS(on) minimizes voltage drop across protection FET; 6.9 A rating supports 3× C-rate discharge. | Use Scenario: 24 V DC digital output stage driving solenoids and relays. IC Role / Device Role: High-current sink switch with fast turn-off for inductive load control. Use Value: 15 ns fall time suppresses inductive kickback energy; SO-8 allows automated placement and reflow compatibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 0.018 Ω @ 4.5 V; higher QG = 22 nC; same SO-8 package | Better conduction loss but slower switching; less suitable above 1 MHz | Prefer for <500 kHz high-current apps where thermal margin dominates switching loss |
| DMN3022LSD-13 | RDS(on) = 0.025 Ω @ 4.5 V; lower QG = 12 nC; dual N-channel with independent sources | Independent source pins enable asymmetric configurations (e.g., OR-ing); no shared-source constraint | Choose when gate drive isolation or non-synchronous control of each channel is required |
Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7401TRPBF offers the best balance of low RDS(on), moderate gate charge, and shared-source simplicity - making it optimal for cost-sensitive, space-constrained synchronous rectifiers where layout symmetry matters.
Availability
IRF7401TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery switches, and battery protection circuits requiring stable component supply and long-term industrial availability.
Supply support for IRF7401TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The StrongIRFET™ family - to which IRF7401TRPBF belongs - targets high-efficiency power conversion in consumer, computing, and industrial applications, emphasizing low RDS(on), fast switching, and robust avalanche capability.
FAQ
What is the maximum safe operating junction temperature for IRF7401TRPBF?
The absolute maximum junction temperature is 150 °C per datasheet. Derating begins at TJ > 125 °C, and continuous operation above 150 °C risks irreversible parametric shift or bond-wire failure. Thermal design must ensure TJ ≤ 150 °C under worst-case ambient and power dissipation conditions.
Can IRF7401TRPBF be used in a half-bridge configuration?
Yes - its dual N-channel structure with shared source enables half-bridge use, but external high-side gate driving (e.g., bootstrap or isolated supply) is required since no integrated level shifter exists. The low QG and fast tf support reliable commutation up to 1 MHz with proper dead-time control.
Does IRF7401TRPBF have avalanche rating?
Yes - it is 100% avalanche tested per EAS = 31 mJ at TJ = 25 °C. This rating applies to single-pulse inductive switching events only; repetitive avalanche is not guaranteed and may degrade reliability over time.
Is the SO-8 package thermally enhanced?
No - IRF7401TRPBF uses a standard SO-8 outline without an exposed thermal pad. Heat transfer occurs through leads and PCB copper; thermal performance depends entirely on board layout - minimum 1-in² 2-oz copper pour under drain pins is recommended for full 6.9 A rating.
IRF7401TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7401TRPBF FAQ
1.How can I place an order for IRF7401TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7401TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7401TRPBF reliable?
The price and inventory of IRF7401TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7401TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7401TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7401TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7401TRPBF?
IRF7401TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7401TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7401TRPBF?
For technical support, including IRF7401TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7401TRPBF requirements.
6.How does Aetrix verify that IRF7401TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7401TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7401TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7401TRPBF?
All IRF7401TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7401TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7401TRPBF part is unused and in its original packaging.
Return procedure for IRF7401TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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