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Infineon Technologies BSP373L6327HTSA1
- Part No.:
- BSP373L6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP373L6327HTSA1.pdf
- Description:
- MOSFET N-CH 100V 1.7A SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,310
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Product details
Overview
BSP373L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® small-signal MOSFET rated for 100 V drain-source voltage, 1.7 A continuous drain current, and 0.3 Ω maximum RDS(on) at VGS = 10 V. It features avalanche energy rating (45 mJ), AEC-Q101 qualification, and SOT-223 package - used in automotive load switching, LED driver high-side control, and industrial power management circuits.
For engineers reviewing the BSP373L6327HTSA1 datasheet, BSP373L6327HTSA1 pinout, BSP373L6327HTSA1 application, or BSP373L6327HTSA1 equivalent, key selection criteria include gate threshold voltage range (2.1–4.0 V), thermal resistance (≤70 K/W), integrated body diode performance (VSD ≤ 1.1 V), and RoHS-compliant tape-and-reel packaging (1000 pcs/reel).
Technical Context
This discrete power MOSFET operates in enhancement mode with a silicon-based SIPMOS® process optimized for low RDS(on) and robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (2.1–4.0 V) ensures reliable turn-on across temperature and supply variations, while its 100 V V(BR)DSS supports 24 V and 48 V automotive and industrial bus systems.
The device integrates a fast-recovery body diode (IS = 1.7 A, VSD = 0.8–1.1 V) and exhibits dynamic parameters including Ciss = 400–550 pF, Coss = 125–190 pF, and tr = 30–45 ns - enabling efficient switching in DC-DC converters and PWM-controlled loads up to ~100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 24 V/48 V nominal systems with ≥2× safety margin against transients |
| ID (continuous) | 1.7 A at TA = 28 °C - suitable for medium-current switching without forced cooling |
| RDS(on) max | 0.3 Ω at VGS = 10 V - limits conduction loss to ≤0.87 W at full load |
| EAS | 45 mJ - enables reliable operation under inductive load switching without external snubbers |
| VGS(th) | 2.1–4.0 V - compatible with 3.3 V and 5 V logic-level drive without gate boosters |
| RthJA | ≤70 K/W - requires ≥6 cm² copper pour on PCB for thermal compliance at full power |
| QG (typ) | Not specified in provided data - gate charge not published in Rev 2.0 datasheet |
Pinout & Package
Package: PG-SOT223 (standard SOT-223 outline, 4-pin variant with two drain terminals). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration improves thermal and current handling).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts 0–20 V gate-source voltage; threshold activation begins at 2.1 V |
| Pin 2 | Drain | Main high-side current path; electrically tied to Pin 4; connects to load or supply rail |
| Pin 3 | Source | Reference node for gate drive and current return; common connection point for load ground |
| Pin 4 | Drain | Second drain terminal; paralleled with Pin 2 to reduce package inductance and improve thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | 45 mJ single-pulse EAS - eliminates need for external clamping in relay/inductor drive |
| AEC-Q101 qualified | Qualified for automotive applications per stress test requirements - valid for under-hood use |
| RoHS-compliant lead plating | Pb-free finish with compliant moisture sensitivity level - supports lead-free reflow assembly |
| Integrated body diode | VSD = 0.8–1.1 V at 1.7 A - enables freewheeling in half-bridge and flyback topologies |
| Tape-and-reel packaging | L6327 designation indicates 1000 pcs/reel - compatible with automated SMT placement |
Applications
| Automotive Door Module Control | Industrial Solenoid Driver |
|---|---|
Use Scenario: Driving 12 V/24 V door lock actuators and mirror position motors in passenger vehicles. IC Role / Device Role / Timing Role: High-side switch controlling solenoid coil current with integrated reverse recovery diode. Use Value: Avalanche rating absorbs inductive kickback without external TVS; AEC-Q101 ensures reliability over 15-year vehicle lifetime. | Use Scenario: Controlling pneumatic/hydraulic solenoid valves in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Medium-current DC load switch interfacing microcontroller GPIOs to 24 V industrial loads. Use Value: 1.7 A continuous rating and 0.3 Ω RDS(on) minimize self-heating during duty-cycled operation. |
| LED Lighting Power Stage | DC-DC Converter Synchronous Rectifier |
Use Scenario: Constant-current dimming stage for commercial LED arrays powered from 48 V bus. IC Role / Device Role / Timing Role: Low-side PWM switch regulating average LED current via duty-cycle modulation. Use Value: Fast turn-on (td(on) ≤15 ns) and rise time (tr ≤45 ns) support >100 kHz PWM without significant switching loss. | Use Scenario: Secondary-side synchronous rectification in isolated 12 V output flyback converters. IC Role / Device Role / Timing Role: Replacement for Schottky diode in low-voltage secondary winding to reduce conduction loss. Use Value: Body diode forward voltage (0.8–1.1 V) lower than typical 40 V Schottky (0.45–0.55 V) but offset by lower RDS(on) conduction loss at >0.5 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK60ZFP | 600 V VDS, 2.6 A ID, 3.3 Ω RDS(on), TO-220FP package | Higher voltage rating but higher on-resistance and larger footprint - suited for mains-connected SMPS, not 24/48 V loads | Select only if primary requirement is 600 V breakdown; unsuitable for space-constrained or low-loss 24 V designs |
| DMN3026LSD-13 | 30 V VDS, 4.5 A ID, 0.035 Ω RDS(on), SOT-23-6 package | Lower voltage rating, smaller package, much lower RDS(on) - optimized for 3.3/5 V logic-driven loads, not 24+ V systems | Prefer for battery-powered or low-voltage logic-level switching; avoid where 100 V transient immunity is required |
Compared with STP3NK60ZFP and DMN3026LSD-13, BSP373L6327HTSA1 uniquely balances 100 V rating, 1.7 A current, 0.3 Ω on-resistance, and SOT-223 thermal performance - making it optimal for cost-sensitive, thermally constrained 24–48 V automotive and industrial switches.
Availability
BSP373L6327HTSA1 is available at Aetrix Electronics and suitable for automotive door modules, industrial solenoid drivers, LED lighting power stages, and DC-DC converter synchronous rectifiers requiring stable component supply and long-term lifecycle assurance.
Supply support for BSP373L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to Infineon's SIPMOS® small-signal MOSFET product line, designed specifically for robust, high-reliability switching in automotive and industrial environments where avalanche tolerance and AEC-Q101 compliance are mandatory.
FAQ
Is BSP373L6327HTSA1 suitable for 48 V automotive battery systems?
Yes. With 100 V V(BR)DSS, it provides ≥2× margin over 48 V nominal systems and handles ISO 7637-2 pulse 5a (120 V/100 ms) transients when properly heatsinked. Its AEC-Q101 qualification confirms suitability for under-hood deployment in 48 V architectures.
What is the maximum operating junction temperature?
The absolute maximum junction temperature is +150 °C, and the device is characterized across –55 °C to +150 °C. At Tj = 150 °C, RDS(on) increases to ~0.6 Ω (per Fig. 7), requiring derating of continuous current to ~0.85 A for thermal stability in sealed enclosures.
Does BSP373L6327HTSA1 have a built-in ESD protection diode?
No. The datasheet does not specify integrated ESD protection. Gate-source voltage is limited to ±20 V, and external Zener clamping (e.g., 12 V TVS) is recommended in high-noise environments such as automotive CAN/LIN subsystems where gate oxide integrity must be preserved.
Can this MOSFET replace a bipolar transistor in existing 24 V load switch designs?
Yes - with gate drive redesign. As a voltage-controlled device, it eliminates base current requirements and reduces drive power. However, its 2.1–4.0 V VGS(th) requires logic-level compatible drive (≥4.5 V) for full enhancement; 3.3 V MCU outputs may yield partial turn-on and increased RDS(on).
BSP373L6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP373L6327HTSA1 FAQ
1.How can I place an order for BSP373L6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP373L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP373L6327HTSA1 reliable?
The price and inventory of BSP373L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP373L6327HTSA1 is usually 5 days.
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4.How is shipping managed for BSP373L6327HTSA1?
BSP373L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP373L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP373L6327HTSA1?
For technical support, including BSP373L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP373L6327HTSA1 requirements.
6.How does Aetrix verify that BSP373L6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSP373L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP373L6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSP373L6327HTSA1?
All BSP373L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP373L6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP373L6327HTSA1 part is unused and in its original packaging.
Return procedure for BSP373L6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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