Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7821GTRPBF

Name: IRF7821GTRPBF
Brand: Infineon Technologies
SKU: IRF7821GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7821GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7821GTRPBF.pdf

Description:: MOSFET N-CH 30V 13.6A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,346

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7821GTRPBF from Infineon Technologies is a 30V, 13A N-channel HEXFET Power MOSFET in SO-8 package, optimized as the synchronous FET in high-frequency buck converters. It delivers 7.0 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and features fully characterized avalanche capability (44 mJ E_AS) for robust point-of-load regulation in networking and computing systems.

For engineers reviewing the IRF7821GTRPBF datasheet, IRF7821GTRPBF pinout, IRF7821GTRPBF application, or IRF7821GTRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, minimized Q_gd/Q_gs1 ratio to suppress C_dV/dt turn-on in synchronous topologies, and validated body diode recovery (Q_rr = 23–35 nC, t_rr = 28–42 ns) under hard-switched conditions.

Technical Context

This MOSFET operates as the low-side synchronous rectifier in non-isolated DC/DC converters, where its low 7.0 mΩ on-resistance directly reduces conduction loss at high RMS current. Its 9.3 nC total gate charge and 2.9 nC gate-to-drain charge enable fast, efficient switching at frequencies up to 1 MHz while limiting drive loss and shoot-through risk.

The device integrates a robust intrinsic body diode with 100 A pulsed source current rating and 1.0 V forward voltage at 10 A. Its 360 pF output capacitance (C_oss) and 6.1 nC output charge (Q_oss) are tightly specified across 0–24 V V_DS, supporting accurate loss modeling in soft-recovery and zero-voltage switching (ZVS) designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in PoL converters
R_DS(on) max @ 10 V	9.1 mΩ - Ensures ≤1.5 W conduction loss at 13 A continuous drain current in thermally constrained SO-8 layout
Q_g typ.	9.3 nC - Enables <100 ns switching transitions with 1 A gate driver, minimizing overlap loss in synchronous operation
Q_rr	23–35 nC - Quantifies reverse recovery charge transferred during body diode commutation, directly impacting control-FET dissipation
E_AS	44 mJ - Single-pulse avalanche energy rating validates ruggedness against inductive switching transients without external snubbing
R_θJA	50 °C/W - Thermal resistance from junction to ambient defines maximum power derating (1.6 W @ T_A = 70 °C) on standard FR4 PCB

Pinout & Package

IRF7821GTRPBF uses the industry-standard SO-8 surface-mount package (5.0 mm × 6.0 mm), with exposed drain pad for enhanced thermal performance. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥10 V drive for full enhancement; sensitive to C_dV/dt coupling from switching node
2,3,4,6,7,8	Drain	High-current output node; all pins internally connected to die drain metallization and exposed thermal pad
5	Source	Power return path and gate reference; ties to power ground plane; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	9.5 mΩ max - Enables direct drive from 5 V PWM controllers without level-shifting, reducing BOM count
Fully characterized avalanche	44 mJ E_AS @ T_J = 25 °C - Eliminates need for external clamping in unclamped inductive switching applications
Optimized gate charge ratio	Q_gd/Q_gs1 ≈ 1.16 - Minimizes C_dV/dt-induced false turn-on in synchronous buck high-side node coupling
Lead-free & halogen-free	RoHS-compliant construction - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility

Applications

Server VRM

Network Switch PoL

Use Scenario: 12 V input to 1.0–1.8 V output conversion delivering up to 100 A per phase in dual-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 500 kHz–1 MHz with 50% duty cycle, commutated by dedicated controller IC.

Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by >30% versus 12 mΩ alternatives, enabling higher efficiency at 40 A RMS load current.

Use Scenario: Point-of-load regulation for ASIC/FPGA cores in 1U network switches with strict thermal envelope (<40 °C ambient).

IC Role / Device Role / Timing Role: Low-side switch in 300 kHz synchronous buck stage, sharing gate drive with control FET via integrated driver.

Use Value: 50 °C/W R_θJA and exposed drain pad allow 13 A continuous current on 2 oz copper without heatsink, saving board space.

Storage Controller PSU

AI Accelerator Module

Use Scenario: 5 V to 3.3 V conversion for NVMe SSD controllers requiring <10 mV output ripple and fast transient response.

IC Role / Device Role / Timing Role: Synchronous FET in multiphase buck converter; body diode conducts during dead-time, demanding low Q_rr.

Use Value: 23–35 nC Q_rr limits reverse recovery loss to <0.15 W per phase, preventing thermal runaway during burst-mode operation.

Use Scenario: 48 V to 12 V intermediate bus conversion feeding GPU memory rails in edge AI inference accelerators.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated LLC + buck hybrid topology, subjected to 100 A pulsed current.

Use Value: 100 A I_SM pulsed source rating supports 200 ns current spikes during GPU workload transients without diode failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 15.5 nC; SO-8 package	Lower conduction loss but higher gate charge increases drive loss and C_dV/dt susceptibility	Preferable only when thermal margin allows higher drive power and layout minimizes switching node coupling
IPB120N04S4-02	R_DS(on) = 1.2 mΩ @ 10 V; TO-263 package; 120 A I_D	Higher current rating and lower R_DS(on), but larger footprint and 3× higher Q_g (28 nC)	Suitable for high-power single-phase designs where SO-8 thermal limits are exceeded, not for space-constrained multi-phase layouts

Compared with SiR872DP-T1-GE3 and IPB120N04S4-02, IRF7821GTRPBF offers optimal balance of low gate charge (9.3 nC), moderate R_DS(on) (7.0 mΩ), and SO-8 thermal performance-making it uniquely suited for compact, high-frequency, multi-phase PoL converters where drive efficiency and layout density are critical.

Availability

IRF7821GTRPBF is available at Aetrix Electronics and suitable for server VRMs, network switch point-of-load regulators, and AI accelerator intermediate bus converters requiring stable component supply and RoHS-compliant sourcing.

Supply support for IRF7821GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency DC/DC conversion, emphasizing low gate charge, avalanche ruggedness, and thermally enhanced packaging for server, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current for IRF7821GTRPBF at 70°C ambient?

The maximum continuous drain current is 11 A at T_A = 70 °C with SO-8 mounting on a standard FR4 PCB (1 in² 2 oz copper). This rating accounts for thermal derating from the 13 A T_A = 25 °C limit using the 20 mW/°C linear derating factor above 70 °C, ensuring safe operation without forced air or heatsink.

Does IRF7821GTRPBF support 4.5 V gate drive in synchronous buck applications?

Yes. At V_GS = 4.5 V, R_DS(on) is guaranteed ≤12.5 mΩ (max), enabling reliable enhancement with 5 V logic-level controllers. The 9.1 mΩ typical value at 4.5 V ensures low conduction loss even under partial gate drive, critical for light-load efficiency in adaptive voltage positioning schemes.

How is the body diode recovery performance quantified for this MOSFET?

Body diode recovery is fully characterized: reverse recovery time t_rr is 28–42 ns, and reverse recovery charge Q_rr is 23–35 nC, measured at I_F = 10 A, V_DD = 20 V, di/dt = 100 A/µs, and T_J = 25 °C. These values are used directly in loss calculations for synchronous rectification and must be included in control-FET thermal design.

Can IRF7821GTRPBF be used in avalanche mode for circuit protection?

Yes. It is fully characterized for unclamped inductive switching with single-pulse avalanche energy E_AS = 44 mJ at T_J = 25 °C and I_AR = 10 A. Operation in avalanche requires strict adherence to the SOA curve in Fig 8 and junction temperature monitoring, as repetitive avalanche is not rated and may degrade reliability.

IRF7821GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7821GTRPBF FAQ

1.How can I place an order for IRF7821GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7821GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7821GTRPBF reliable?

The price and inventory of IRF7821GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7821GTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7821GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7821GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7821GTRPBF?

IRF7821GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7821GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7821GTRPBF?

For technical support, including IRF7821GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7821GTRPBF requirements.

6.How does Aetrix verify that IRF7821GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7821GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7821GTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7821GTRPBF?

All IRF7821GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7821GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7821GTRPBF part is unused and in its original packaging.

Return procedure for IRF7821GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.