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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD25CN10NGBUMA1

Name: IPD25CN10NGBUMA1
Brand: Infineon Technologies
SKU: IPD25CN10NGBUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD25CN10NGBUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD25CN10NGBUMA1.pdf

Description:: MOSFET N-CH 100V 35A TO252-3

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Product details

Overview

IPD25CN10NGBUMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO252-3 (DPAK) package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 25 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, low gate charge (Q_g = 23–31 nC), and is optimized for high-frequency switching in DC-DC converters and synchronous rectification.

For engineers reviewing the IPD25CN10NGBUMA1 datasheet, IPD25CN10NGBUMA1 pinout, IPD25CN10NGBUMA1 application, or IPD25CN10NGBUMA1 equivalent, key selection criteria include R_DS(on) vs. thermal resistance (R_thJC = 2.1 K/W), avalanche energy rating (E_AS = 65 mJ), diode reverse recovery performance (t_rr = 85 ns), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This MOSFET employs OptiMOS™2 silicon technology with a planar vertical structure, delivering low gate charge × R_DS(on) figure-of-merit (FOM) for efficient hard-switching operation. Its threshold voltage (V_GS(th) = 2–4 V) ensures robust turn-on control under standard 10 V gate drive, while the integrated body diode supports bidirectional current handling in buck and LLC topologies.

Thermal design is enabled by its low R_thJC of 2.1 K/W and compatibility with 6 cm² copper cooling area on FR4 PCB. The device sustains pulsed drain current up to 140 A and exhibits controlled dv/dt immunity (6 kV/µs) under high di/dt conditions, critical for noise-sensitive SMPS layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus applications with 2× safety margin.
R_DS(on) max	25 mΩ @ V_GS = 10 V, I_D = 35 A - Enables <1 W conduction loss at 20 A, reducing heatsink requirements.
I_D cont	35 A @ T_C = 25 °C - Supports high-current output stages in server VRMs and telecom PSUs.
E_AS	65 mJ - Withstands single-pulse inductive energy without failure in flyback or synchronous rectifier snubbing.
t_rr	85 ns - Minimizes reverse recovery losses and EMI in high-frequency (>300 kHz) synchronous rectification.
Q_g	23–31 nC - Enables fast switching with moderate gate driver strength (e.g., 1–2 A peak).
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating.

Pinout & Package

IPD25CN10NGBUMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤±20 V drive; low C_iss (1560–2070 pF) eases gate loop layout.
Pin 2 (D)	Drain terminal / thermal pad	Main high-side or low-side switch node; tab connects directly to PCB copper for R_thJC = 2.1 K/W path.
Pin 3 (S)	Source terminal	Reference node for gate drive; ties to power ground or floating source in high-side configuration.

Key Features

Feature	Design Value
N-channel, normal level	Turns fully on with standard 10 V gate drive-no level-shifting needed in most 12 V or 15 V gate driver designs.
Low R_DS(on) × Q_g FOM	~575 mΩ·nC - Balances conduction and switching losses for optimal efficiency at 200–500 kHz.
175 °C operating temperature	Enables full-rated current delivery in compact, thermally constrained modules without forced air.
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for industrial power applications-no additional qualification testing required.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive-suitable for export-controlled and green-certified end equipment.

Applications

Server Voltage Regulator Module (VRM)

Telecom 48 V DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 300–600 kHz with precise dead-time control.

Use Value: 25 mΩ R_DS(on) and 85 ns t_rr reduce conduction + recovery losses by >15% vs. legacy 40 mΩ parts, improving VRM efficiency at 90% load.

Use Scenario: Isolated forward or active-clamp forward converter converting 48 V input to 12 V/24 V outputs for base station RF modules.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in hard-switched topology, driven by transformer-coupled gate signal.

Use Value: 100 V rating and 65 mJ E_AS withstand reflected transients and leakage inductance spikes without snubber redesign.

Industrial Motor Drive Inverter Stage

Automotive On-Board Charger (OBC) PFC Stage

Use Scenario: 3-phase inverter driving 1–3 kW BLDC motors in HVAC compressors or pumps.

IC Role / Device Role / Timing Role: Half-bridge low-side switch, commutated at 8–20 kHz with bootstrap gate drive.

Use Value: 175 °C T_j max and 2.1 K/W R_thJC allow direct mounting on aluminum heatsinks in sealed motor control enclosures.

Use Scenario: Boost PFC stage in bi-directional OBC converting AC grid to 400 V DC bus for EV battery charging.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65–100 kHz with CCM control.

Use Value: Low Q_g (23–31 nC) and high dv/dt immunity (6 kV/µs) enable clean zero-crossing detection and reduced EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB26CN10NG	R_DS(on) max = 26 mΩ (TO-263); higher R_thJC = 2.2 K/W; identical V_DS/I_D ratings.	Requires larger PCB footprint; better suited for through-hole or mixed-technology boards.	Select when TO-263 mechanical robustness or manual reworkability is prioritized over DPAK space savings.
IPP26CN10NG	R_DS(on) max = 26 mΩ (TO-220); R_thJC = 2.2 K/W; same die but different leadframe and thermal path.	Needs screw-mount heatsink; not suitable for fully SMT production lines.	Choose for prototyping or low-volume industrial controls where TO-220 mounting flexibility outweighs automated assembly constraints.

Compared with IPB26CN10NG and IPP26CN10NG, IPD25CN10NGBUMA1 offers the smallest footprint and lowest thermal resistance among the OptiMOS™2 100 V family, making it optimal for space-constrained, high-power-density SMT designs requiring minimal board area and maximum thermal performance.

Availability

IPD25CN10NGBUMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPD25CN10NGBUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™2 Power-Transistor product line, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial systems where low R_DS(on) × Q_g FOM is critical.

FAQ

What is the maximum gate-source voltage rating for IPD25CN10NGBUMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this may cause irreversible gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V during turn-on and –5 V to 0 V during turn-off to ensure fast, low-loss switching without overstress.

Does IPD25CN10NGBUMA1 have an integrated Schottky diode?

No-it contains a standard silicon body diode inherent to the vertical MOSFET structure, with V_SD = 1.0–1.2 V at I_F = 35 A and t_rr = 85 ns. It is not a Schottky or trench-Schottky device; its diode is optimized for synchronous rectification rather than ultra-fast recovery or low forward drop.

Can IPD25CN10NGBUMA1 be used in avalanche mode continuously?

No-its 65 mJ E_AS rating applies only to single-pulse avalanche events under defined test conditions (I_D = 35 A, R_GS = 25 Ω). Continuous avalanche operation is not characterized or guaranteed; sustained operation beyond SOA limits risks thermal runaway and device failure.

Is the PG-TO252-3 package of IPD25CN10NGBUMA1 lead (Pb)-free?

Yes-the device uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The marking "GBUMA1" indicates the RoHS-compliant, halogen-free variant per IEC61249-2-21, with no lead content in terminations or mold compound.

IPD25CN10NGBUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD25CN10NGBUMA1 FAQ

1.How can I place an order for IPD25CN10NGBUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD25CN10NGBUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD25CN10NGBUMA1 reliable?

The price and inventory of IPD25CN10NGBUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD25CN10NGBUMA1 is usually 5 days.

3.What payment methods are accepted for IPD25CN10NGBUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD25CN10NGBUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD25CN10NGBUMA1?

IPD25CN10NGBUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD25CN10NGBUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD25CN10NGBUMA1?

For technical support, including IPD25CN10NGBUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD25CN10NGBUMA1 requirements.

6.How does Aetrix verify that IPD25CN10NGBUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD25CN10NGBUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD25CN10NGBUMA1 meets industry standards.

7.What is the process for return or replacement of IPD25CN10NGBUMA1?

All IPD25CN10NGBUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD25CN10NGBUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD25CN10NGBUMA1 part is unused and in its original packaging.

Return procedure for IPD25CN10NGBUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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