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Infineon Technologies IRLR3714TRPBF
- Part No.:
- IRLR3714TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR3714TRPBF.pdf
- Description:
- MOSFET N-CH 20V 36A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,801
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Product details
Overview
IRLR3714TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 36 A N-channel enhancement-mode power MOSFET in D-Pak package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 20 mΩ RDS(on) at VGS = 4.5 V, supports 140 A pulsed drain current, and features fully characterized avalanche capability (72 mJ EAS)-enabling robust operation in telecom and industrial SMPS.
For engineers reviewing the IRLR3714TRPBF datasheet, IRLR3714TRPBF pinout, IRLR3714TRPBF application, or IRLR3714TRPBF equivalent, key selection criteria include its low gate charge (9.7 nC max), fast switching (tf = 4.5 ns), body diode reverse recovery performance (Qrr = 34–53 nC), and thermal resistance (RθJC = 3.2 °C/W) for high-density power stage design.
Technical Context
This HEXFET device uses planar stripe cell structure with optimized gate oxide and source metallization to achieve ultra-low RDS(on) and gate impedance. Its threshold voltage (1.0–3.0 V) enables direct drive from 3.3 V and 5 V controllers, while the 0.88 V body diode forward voltage at 18 A (TJ = 125°C) reduces conduction loss in synchronous rectifier topologies.
The MOSFET is characterized for unclamped inductive switching up to 14 A avalanche current and exhibits stable transconductance (17 S typ.) across temperature. Its Crss of 68 pF and Ciss of 670 pF support high-frequency operation (>1 MHz) with minimal Miller effect, making it suitable for advanced resonant and ZVS converter architectures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Supports input rails up to 16 V with margin for transient spikes in low-voltage SMPS. |
| RDS(on) @ 4.5 V | 20 mΩ - Enables <1 W conduction loss at 36 A continuous, critical for high-efficiency 12 V/5 V output stages. |
| Qg | 9.7 nC max - Reduces gate driver power demand and switching loss in 500 kHz–1 MHz applications. |
| EAS | 72 mJ - Withstands single-pulse inductive energy without failure during startup or fault conditions. |
| tf | 4.5 ns - Minimizes turn-off overlap loss in hard-switched synchronous rectifiers. |
| RθJC | 3.2 °C/W - Allows >30 W dissipation with modest heatsinking, supporting compact board-level thermal design. |
| VSD @ 18 A | 0.88 V @ TJ = 125°C - Low body diode drop improves light-load efficiency in discontinuous conduction mode. |
Pinout & Package
IRLR3714TRPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports PCB mount with low RθJA = 110 °C/W and offers mechanical robustness for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path output terminal | Internally connected to exposed copper pad; must be soldered to large copper pour for thermal and current handling. |
| Gate (G) | Control electrode | High-impedance input requiring <10 Ω series resistance to damp ringing; sensitive to ESD. |
| Source (S) | Reference node for gate drive and current return | Common node for source sensing and gate driver ground; ties to power ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 20 mΩ enables direct interface with low-voltage PWM controllers without level-shifting. |
| Fully characterized avalanche rating | 72 mJ EAS and 14 A IAR allow reliable operation under unclamped inductive switching stress. |
| Low Qgd/Qg ratio | 2.9 nC / 9.7 nC improves immunity to dv/dt-induced turn-on in high-side configurations. |
| Optimized body diode recovery | 34–53 nC Qrr and 35–53 ns trr reduce switching loss and EMI in synchronous rectifier use. |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: 48 V to 12 V isolated intermediate bus converter in 1 RU telecom shelf. IC Role / Device Role: Synchronous rectifier in secondary-side center-tapped or LLC resonant topology. Use Value: 20 mΩ RDS(on) and low Qg cut conduction and switching losses by >15% vs. legacy 30 mΩ devices at 500 kHz. | Use Scenario: Multiphase buck converter delivering 100+ A to CPU/GPU at ≤1.2 V. IC Role / Device Role: High-side switch in interleaved phase-leg with integrated driver. Use Value: Fast tf (4.5 ns) and low Crss (68 pF) minimize dead-time loss and improve current sharing accuracy. |
| Industrial PLC Power Supplies | Medical Imaging DC-DC Modules |
Use Scenario: 24 V input, 5 V/3.3 V dual-output flyback with synchronous rectification. IC Role / Device Role: Secondary-side MOSFET replacing Schottky diode to improve efficiency and thermal margin. Use Value: 0.88 V VSD at 125°C reduces diode conduction loss by 300 mW over 40 V Schottky at full load. | Use Scenario: Compact 100 W isolated DC-DC module powering FPGA and analog front-end in portable MRI subsystem. IC Role / Device Role: Primary-side switch in active-clamp forward converter operating at 300–600 kHz. Use Value: 72 mJ EAS withstands leakage inductance energy during clamp reset, eliminating need for snubber. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3715TRPBF | 20 V, 42 A, 15 mΩ RDS(on) @ 4.5 V, higher Qg (12.5 nC) | Better conduction loss at high current; increased gate drive requirement | Preferred when thermal headroom is limited and gate drive strength supports higher Qg. |
| SI2302DS-T1-GE3 | 20 V, 2.6 A, 55 mΩ RDS(on), SOT-23 package, lower voltage rating margin | Only suitable for low-current (<3 A), space-constrained auxiliary rails | Use only for bias supplies or low-power logic rails-not for main power conversion paths. |
Compared with IRLR3715TRPBF, the IRLR3714TRPBF trades 5 mΩ higher RDS(on) for 2.8 nC lower Qg, favoring high-frequency efficiency; versus SI2302DS-T1-GE3, it delivers >13× higher current capability and 2.75× lower RDS(on), enabling primary power stage use where the SOT-23 part cannot scale.
Availability
IRLR3714TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRLR3714TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.
The IRLR/U37xx family was designed specifically for high-efficiency, high-frequency DC-DC conversion in telecom and computing infrastructure-emphasizing low-voltage gate drive compatibility, avalanche ruggedness, and thermally efficient packaging.
FAQ
Is IRLR3714TRPBF suitable for 3.3 V gate drive?
Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed RDS(on) at VGS = 4.5 V, the device turns on strongly with 3.3 V logic-level drivers. At 3.3 V, typical RDS(on) is ~35 mΩ-still sufficient for many medium-current applications with appropriate thermal design.
What is the maximum recommended PCB copper area for the drain pad?
For optimal thermal performance, the exposed drain pad should connect to ≥250 mm² of 2 oz copper on the primary layer, with ≥4 thermal vias (0.3 mm diameter, filled or plated) to inner ground planes. This achieves near-datasheet RθJC of 3.2 °C/W in standard JEDEC test conditions.
Does IRLR3714TRPBF have built-in ESD protection?
No. The device has no integrated ESD protection diodes. Gate oxide is rated for ±20 V absolute maximum VGS; therefore, external gate protection (e.g., 12 V Zener clamp to source) is required in handling and board-level environments with >2 kV HBM risk.
Can IRLR3714TRPBF replace IRLR3714PbF in existing designs?
Yes. IRLR3714TRPBF is the tape-and-reel packaging variant of IRLR3714PbF, with identical die, electrical specs, thermal characteristics, and RoHS-compliant lead-free construction. Pinout, footprint, and reliability data are fully interchangeable.
IRLR3714TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.7 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 670 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 47W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR3714TRPBF FAQ
1.How can I place an order for IRLR3714TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR3714TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR3714TRPBF reliable?
The price and inventory of IRLR3714TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3714TRPBF is usually 5 days.
3.What payment methods are accepted for IRLR3714TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3714TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR3714TRPBF?
IRLR3714TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR3714TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR3714TRPBF?
For technical support, including IRLR3714TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3714TRPBF requirements.
6.How does Aetrix verify that IRLR3714TRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR3714TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3714TRPBF meets industry standards.
7.What is the process for return or replacement of IRLR3714TRPBF?
All IRLR3714TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3714TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR3714TRPBF part is unused and in its original packaging.
Return procedure for IRLR3714TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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