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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB35N10 G

Name: SPB35N10 G
Brand: Infineon Technologies
SKU: SPB35N10 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB35N10 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB35N10 G.pdf

Description:: MOSFET N-CH 100V 35A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPB35N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in P-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 44 mΩ R_DS(on) max at V_GS = 10 V. It operates up to 175 °C junction temperature, features avalanche rating (E_AS = 245 mJ), and is dv/dt rated for robust switching in hard-switched DC-DC converters and motor drives.

For engineers reviewing the SPB35N10 datasheet, SPB35N10 pinout, SPB35N10 application, or SPB35N10 equivalent, key selection criteria include its 100 V blocking capability, low on-resistance with thermal stability, TO263-3 footprint compatibility, and verified unclamped inductive switching performance under industrial temperature conditions.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for high-current, medium-voltage switching with low gate charge (Q_g = 49–65 nC) and fast switching dynamics (t_r = 63–95 ns, t_f = 23–34 ns). Its transconductance (g_fs = 12–23 S) and gate threshold voltage (V_GS(th) = 2.1–4.0 V) support stable gate drive across temperature.

The device integrates a robust body diode with reverse recovery charge Q_rr = 230–290 nC and t_rr = 80–100 ns, enabling reliable freewheeling in synchronous rectification and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; supports 48 V and 60 V bus systems with 2× safety margin.
R_DS(on) max	44 mΩ at V_GS = 10 V, I_D = 26.4 A - Enables <1.2 W conduction loss at 25 A, critical for thermally constrained PCB layouts.
I_D cont	35 A at T_C = 25 °C - Delivers high current density in TO263-3 package with 1 K/W R_thJC for direct heatsink mounting.
E_AS	245 mJ (single pulse, I_D = 35 A, V_DD = 25 V) - Withstands unclamped inductive energy without failure in motor control fault events.
Q_g	49–65 nC - Low total gate charge reduces driver power and enables efficient 100–500 kHz PWM operation with standard gate drivers.
T_j max	175 °C - Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial inverters).

Pinout & Package

P-TO263-3-2 (D²PAK) package: surface-mount, isolated drain tab, 3-pin configuration with exposed copper drain pad for thermal and electrical connection to PCB heatsink area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current back to source.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires 10 V drive for full enhancement; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output / high-side connection	Exposed copper tab - electrically and thermally connected to drain; must be soldered to ≥6 cm² copper pour for rated P_tot = 150 W.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse E_AS = 245 mJ enables ruggedness in inductive load switching without external snubbers.
dv/dt ruggedness	Rated to 6 kV/µs (I_S = 35 A, V_DS = 80 V) - prevents false turn-on during high-speed voltage transients in bridge circuits.
Thermal resistance R_thJC	1 K/W - Allows direct heatsink mounting via drain tab; enables >100 W dissipation with modest heatsinking.
Body diode Q_rr	230–290 nC - Low reverse recovery charge minimizes commutation losses and EMI in synchronous rectifier applications.

Applications

Motor Control

DC-DC Converters

Use Scenario: 3-phase BLDC inverter stage for industrial pumps and fans operating at 48 V bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation; handles 35 A peak phase current.

Use Value: Avalanche rating ensures survival during phase current transients; low R_DS(on) maintains efficiency >96% at full load.

Use Scenario: Primary-side switch in isolated 48 V → 12 V flyback converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch with 100 V V_DS margin over reflected output voltage + leakage spikes.

Use Value: 44 mΩ R_DS(on) limits conduction loss to <1.5 W at 25 A; fast t_r/t_f supports 300 kHz operation.

Industrial Heating

UPS Inverters

Use Scenario: Solid-state relay replacement in resistive heating control for ovens and dryers.

IC Role / Device Role / Timing Role: Zero-crossing switched power switch driving 2 kW resistive loads at 230 VAC RMS.

Use Value: 175 °C T_j max allows sustained operation in enclosed cabinets; dv/dt rating prevents spurious turn-on from AC line noise.

Use Scenario: Half-bridge leg in online UPS inverter delivering 1 kVA output with battery backup.

IC Role / Device Role / Timing Role: Low-loss switching device handling bidirectional current in 200 V DC link with PWM modulation.

Use Value: Body diode Q_rr < 300 nC reduces shoot-through risk and improves waveform fidelity at 50/60 Hz fundamental.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	R_DS(on) = 40 mΩ typ (vs. 36–44 mΩ), Q_g = 55 nC, TO220 package	Lacks TO263-3 footprint; higher R_thJA (62 K/W) limits power density in SMT designs	Prefer SPB35N10 for surface-mount, high-power-density boards requiring thermal pad attachment.
IRF3205	V_DS = 55 V (vs. 100 V); R_DS(on) = 8 mΩ typ; TO220 package	Insufficient voltage rating for 48 V+ systems with transient margin; unsuitable for 100 V bus applications	Select SPB35N10 where 100 V blocking and industrial temperature range are mandatory.

Compared with STP35NF10 and IRF3205, SPB35N10 uniquely combines 100 V rating, TO263-3 surface-mount thermal performance, and guaranteed avalanche energy-making it optimal for space-constrained, high-reliability industrial switching where voltage margin and ruggedness are non-negotiable.

Availability

SPB35N10 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial heating applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPB35N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The SIPMOS™ power transistor product line delivers high-voltage, high-current discrete MOSFETs engineered for industrial motor drives, UPS systems, and renewable energy inverters demanding ruggedness and thermal reliability.

FAQ

What is the maximum gate-source voltage for SPB35N10?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive is +10 V to ensure full enhancement while maintaining margin against overshoot and ringing in high-dI/dt layouts.

Does SPB35N10 require a gate resistor for safe operation?

Yes - a series gate resistor (typically 5–22 Ω) is required to dampen gate oscillation, limit peak gate current, and control dV/dt during switching. Without it, parasitic inductance can cause gate voltage overshoot exceeding ±20 V, risking device failure or erratic behavior in bridge configurations.

Can SPB35N10 replace SPB35N10H in existing designs?

No - SPB35N10H is a distinct variant with enhanced avalanche rating (E_AS = 300 mJ) and tighter R_DS(on) distribution. While pin-compatible, SPB35N10 lacks the extended ruggedness margin and may not survive repeated fault conditions where SPB35N10H is specified.

Is the drain tab of SPB35N10 electrically isolated from the PCB substrate?

No - the drain tab is internally connected to the MOSFET's drain terminal and must be electrically isolated from other circuit nodes using insulating thermal pads or dielectric coatings when mounted to a common heatsink. Direct soldering to copper pour establishes both thermal and electrical connection to the drain net.

SPB35N10 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 26.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB35N10 G FAQ

1.How can I place an order for SPB35N10 G through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB35N10 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB35N10 G reliable?

The price and inventory of SPB35N10 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB35N10 G is usually 5 days.

3.What payment methods are accepted for SPB35N10 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB35N10 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB35N10 G?

SPB35N10 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB35N10 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB35N10 G?

For technical support, including SPB35N10 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB35N10 G requirements.

6.How does Aetrix verify that SPB35N10 G is sourced from the original manufacturer or authorized distributors?

All SPB35N10 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB35N10 G meets industry standards.

7.What is the process for return or replacement of SPB35N10 G?

All SPB35N10 G units undergo pre-shipment inspection (PSI). If there is an issue with SPB35N10 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB35N10 G part is unused and in its original packaging.

Return procedure for SPB35N10 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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