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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFR5410TRR MOSFET P-CH 100V 13A DPAK Infineon Technologies	2,053	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	205mOhm @ 7.8A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IPB80N04S2H4ATMA1 MOSFET N-CH 40V 80A TO263-3 Infineon Technologies	6,134	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	80A (Tc)	10V	3.7mOhm @ 80A, 10V	4V @ 250µA	148 nC @ 10 V	±20V	4400 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3-2
IRLR9343-701PBF MOSFET P-CH 55V 20A IPAK Infineon Technologies	3,570	RFQ	Datasheet	HEXFET®	TO-252-4, DPAK (3 Leads + Tab)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	20A (Tc)	4.5V, 10V	105mOhm @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	660 pF @ 50 V	-	79W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	I-PAK (LF701)
IRF1010ZLPBF MOSFET N-CH 55V 75A TO262 Infineon Technologies	6,528	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	10V	7.5mOhm @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	2840 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF1010EZLPBF MOSFET N-CH 60V 75A TO262 Infineon Technologies	6,298	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFB3306GPBF MOSFET N-CH 60V 120A TO220AB Infineon Technologies	6,888	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	4.2mOhm @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4520 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
BSC057N03MSGATMA1 MOSFET N-CH 30V 15A/71A TDSON Infineon Technologies	6,061	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	15A (Ta), 71A (Tc)	4.5V, 10V	5.7mOhm @ 30A, 10V	2V @ 250µA	40 nC @ 10 V	±16V	3100 pF @ 15 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-5
BSC0908NSATMA1 MOSFET N-CH 34V 14A/49A TDSON Infineon Technologies	6,255	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	34 V	14A (Ta), 49A (Tc)	4.5V, 10V	8mOhm @ 30A, 10V	2.2V @ 250µA	14 nC @ 10 V	±20V	1220 pF @ 15 V	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1
IRFR5305CPBF MOSFET P-CH 55V 31A DPAK Infineon Technologies	2,761	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFB5620PBFXKMA1 TRENCH >=100V Infineon Technologies	9,922	RFQ	-	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	25A (Tc)	10V	72.5mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-904

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