My Inquiry
My Account
Infineon Technologies IRFR5410TRR
- Part No.:
- IRFR5410TRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR5410TRR.pdf
- Description:
- MOSFET P-CH 100V 13A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,053
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR5410TRR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -100 V VBR(DSS), 0.205 Ω RDS(on) at VGS = -10 V, and -13 A continuous drain current at TC = 25°C. It delivers ultra-low on-resistance, fast switching, and full avalanche ruggedness for high-efficiency DC-DC conversion and load switching in industrial power supplies.
For engineers reviewing the IRFR5410TRR datasheet, IRFR5410TRR pinout, IRFR5410TRR application, or IRFR5410TRR equivalent, key selection criteria include verified P-channel polarity, confirmed -100 V breakdown voltage, validated thermal resistance (RθJC = 1.9 °C/W), and documented gate charge (Qg = 58 nC) for accurate driver sizing and loss estimation.
Technical Context
This MOSFET employs fifth-generation HEXFET processing to minimize conduction losses while maintaining robust unclamped inductive switching capability. Its body diode exhibits VSD = -1.6 V at -7.8 A and reverse recovery time trr = 130–190 ns under specified conditions, supporting synchronous rectification and bidirectional current handling in half-bridge topologies.
The device operates across -55°C to +150°C junction temperature range with ±20 V gate-to-source voltage rating and -0.12 V/°C VBR(DSS) temperature coefficient. Its 58 nC total gate charge and 32 nC Miller charge (Qgd) define critical timing behavior during hard-switching transitions in high-frequency SMPS designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | -100 V - Maximum blocking voltage before avalanche onset; defines safe operating range in negative-rail switching applications |
| RDS(on) | 0.205 Ω @ VGS = -10 V - Directly determines I²R conduction loss at -7.8 A; enables <1.3 W dissipation at rated current |
| ID (continuous) | -13 A @ TC = 25°C - Thermal-limited current capacity; derates to -8.2 A at 100°C case temperature |
| Qg | 58 nC - Total gate charge required for full turn-on; sets minimum driver current and switching energy budget |
| trr | 130–190 ns - Body diode reverse recovery time; impacts shoot-through risk and EMI in bridge configurations |
| RθJC | 1.9 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for high-power operation |
| EAS | 194 mJ - Single-pulse avalanche energy rating; confirms ruggedness under inductive fault conditions without failure |
Pinout & Package
IRFR5410TRR uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package features three main terminals plus an auxiliary drain connection for low-inductance current return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires -10 V for full enhancement; threshold voltage range -2.0 to -4.0 V |
| 2 (Drain) | Main current sink | Connected to high-side negative rail; electrically tied to exposed metal tab for thermal conduction |
| 3 (Source) | Reference node | Serves as circuit common for gate drive and load return; defines VGS reference point |
| 4 (Drain) | Secondary drain connection | Parallel path to Pin 2; reduces package inductance and improves current sharing in high-di/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.205 Ω enables <1.3 W conduction loss at -7.8 A, reducing thermal stress in compact power stages |
| Full avalanche rating | 194 mJ single-pulse energy tolerance ensures reliable operation during inductive load transients without derating |
| P-channel topology | Supports high-side switching in negative-rail systems without level-shifting gate drivers |
| Fast body diode | 130–190 ns trr and -1.6 V VSD allow efficient freewheeling in buck and synchronous rectifier circuits |
| Surface-mount D-Pak | TO-252AA footprint enables automated assembly and direct PCB heatsinking via exposed drain pad |
Applications
| Industrial DC-DC Converters | High-Side Load Switches |
|---|---|
Use Scenario: 24 V to 5 V isolated buck converter in programmable logic controller (PLC) backplane power distribution. IC Role / Device Role / Timing Role: High-side P-channel switch controlling input stage; operates at 250 kHz with 50% duty cycle. Use Value: 0.205 Ω RDS(on) limits conduction loss to 1.25 W at 2.5 A load, enabling natural convection cooling on 2-layer PCB. | Use Scenario: Hot-swap control for redundant 48 V telecom power modules with inrush current limiting. IC Role / Device Role / Timing Role: Main power FET in active OR-ing circuit; handles up to -13 A steady-state current. Use Value: Fully avalanche-rated design withstands 194 mJ transient energy during hot-insertion events without latch-up or degradation. |
| Motor Drive Half-Bridges | Automotive Body Control Modules |
Use Scenario: Bidirectional 12 V brushed DC motor control in HVAC actuator subsystem. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; commutated at ≤20 kHz with body diode conducting reverse current. Use Value: 130–190 ns trr minimizes cross-conduction window, reducing shoot-through risk and gate driver stress. | Use Scenario: Negative-rail power switch for LED headlamp dimming and diagnostic feedback circuits. IC Role / Device Role / Timing Role: P-channel high-side switch controlled by microcontroller GPIO with -10 V gate drive. Use Value: -100 V VBR(DSS) accommodates load-dump transients up to ISO 7637-2 Pulse 5a (110 V peak), ensuring AEC-Q101 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR5405TRPBF | VBR(DSS) = -55 V; RDS(on) = 0.115 Ω @ -10 V; Qg = 32 nC | Limited to ≤55 V systems; lower gate charge enables faster switching but reduced surge margin | Select when operating voltage is ≤40 V and switching frequency exceeds 500 kHz |
| STP12PF06 | VBR(DSS) = -60 V; RDS(on) = 0.18 Ω @ -10 V; TO-220 package | Through-hole mounting only; higher RθJA (62 °C/W) limits power density vs. D-Pak | Choose for legacy through-hole designs requiring mechanical robustness over thermal efficiency |
Compared with IRFR5410TRR, IRFR5405TRPBF offers lower conduction loss and gate drive demand at reduced voltage rating, while STP12PF06 provides comparable RDS(on) in a thermally less efficient through-hole format-neither matches the -100 V ruggedness and surface-mount thermal advantage of the original.
Availability
IRFR5410TRR is available at Aetrix Electronics and suitable for industrial DC-DC converters, high-side load switches, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for IRFR5410TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.
This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability industrial and automotive power switching where ruggedness, thermal efficiency, and avalanche tolerance are critical design requirements.
FAQ
What is the maximum gate-to-source voltage rating for IRFR5410TRR?
The absolute maximum VGS rating is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable enhancement, apply -10 V to achieve full RDS(on) specification; gate threshold spans -2.0 V to -4.0 V, so logic-level drive requires careful voltage translation.
Can IRFR5410TRR be used in synchronous rectification applications?
Yes-it supports synchronous rectification due to its fast body diode (trr = 130–190 ns, VSD = -1.6 V at -7.8 A) and low RDS(on). However, its P-channel configuration requires complementary high-side gate drive timing, and its Qgd/Qgs ratio (32 nC / 8.3 nC) must be accounted for in dead-time optimization to prevent shoot-through.
Is IRFR5410TRR suitable for automotive under-hood applications?
It meets the -55°C to +150°C operating junction temperature range required for many under-hood roles, and its -100 V VBR(DSS) handles ISO 7637-2 load-dump pulses. However, it is not AEC-Q101 qualified; for certified automotive use, Infineon's AEC-Q101-compliant P-channel alternatives like IPB120P04P4L must be selected instead.
How does the dual-drain configuration (Pins 2 and 4) impact PCB layout?
Pins 2 and 4 are internally connected to the same drain node and share the exposed metal tab. Routing both pins to a large copper pour improves thermal transfer and reduces source inductance. Avoid splitting the drain net-connect both pins directly to the same low-impedance plane to minimize voltage spikes during high-di/dt switching events.
IRFR5410TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 205mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 66W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR5410TRR FAQ
1.How can I place an order for IRFR5410TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR5410TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR5410TRR reliable?
The price and inventory of IRFR5410TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5410TRR is usually 5 days.
3.What payment methods are accepted for IRFR5410TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5410TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR5410TRR?
IRFR5410TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR5410TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR5410TRR?
For technical support, including IRFR5410TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5410TRR requirements.
6.How does Aetrix verify that IRFR5410TRR is sourced from the original manufacturer or authorized distributors?
All IRFR5410TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5410TRR meets industry standards.
7.What is the process for return or replacement of IRFR5410TRR?
All IRFR5410TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5410TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR5410TRR part is unused and in its original packaging.
Return procedure for IRFR5410TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR5410TRR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
