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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S2H4ATMA1

Name: IPB80N04S2H4ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S2H4ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S2H4ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S2H4ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S2H4ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 3.7 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of electric power steering (EPS) systems.

For engineers reviewing the IPB80N04S2H4ATMA1 datasheet, IPB80N04S2H4ATMA1 pinout, IPB80N04S2H4ATMA1 application, or IPB80N04S2H4ATMA1 equivalent, key selection criteria include its 0.5 K/W junction-to-case thermal resistance, 3.2–3.7 mΩ typical R_DS(on) in SMD configuration, 103–148 nC total gate charge, and integrated body diode with 195 ns reverse recovery time under defined test conditions.

Technical Context

This OptiMOS® device uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust drive compatibility with standard 5 V and 12 V logic-level controllers, while the 4400 pF input capacitance and 480 pF reverse transfer capacitance support predictable turn-on/turn-off timing with 23 ns turn-on delay and 46 ns turn-off delay at R_G = 1.3 Ω.

The integrated Schottky-like body diode delivers 80 A continuous forward current and 370 nC reverse recovery charge at 100 A/µs di/dt, enabling efficient synchronous rectification and freewheeling in high-frequency buck converters and H-bridge motor drivers without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V battery rail transients (e.g., load dump up to 40 V).
R_DS(on) max	3.7 mΩ at V_GS = 10 V, T_j = 25 °C - Enables ≤ 24 W conduction loss at 80 A, critical for thermally constrained EPS modules.
I_D continuous	80 A at T_C = 25 °C - Supported by 0.5 K/W R_thJC, allowing direct heatsink mounting without thermal derating penalties.
E_AS	660 mJ single-pulse avalanche energy - Ensures ruggedness against inductive switching surges in motor phase-legs.
Q_g total	103–148 nC - Determines gate driver power requirement and switching loss trade-off in 20–100 kHz PWM applications.
t_r/t_f	63 ns / 22 ns - Enables fast transition through Miller plateau, reducing switching losses in high-efficiency inverters.
V_SD	0.9–1.3 V at I_F = 80 A - Low forward drop minimizes freewheeling loss during dead-time in half-bridge configurations.

Pinout & Package

IPB80N04S2H4ATMA1 is housed in PG-TO263-3-2 (D²PAK), a surface-mount power package with isolated drain tab for PCB thermal relief. The three terminals are arranged linearly: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control electrode requiring 103–148 nC charge to fully enhance channel; sensitive to ESD (±20 V rating).
Pin 2 (center tab)	Drain	Main high-current path connected to PCB copper area (≥6 cm²) for thermal conduction; electrically tied to exposed metal tab.
Pin 3 (right)	Source	Reference node for gate drive and current sensing; common return for internal body diode cathode connection.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per ISO/TS 16949.
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche capability up to 660 mJ, eliminating need for external snubbers in motor phase legs.
MSL1 rating (260 °C peak reflow)	Enables standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements.
Green product (RoHS compliant)	Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE.
Optimized for 12 V systems	Low R_DS(on) and fast switching minimize both conduction and switching losses in starter-generator and EPS control units.

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current H-bridge driving 12 V brushless motor for torque assist.

IC Role / Device Role / Timing Role: Low-side and high-side switching element handling bidirectional 80 A phase current with <22 ns fall time.

Use Value: 3.7 mΩ R_DS(on) reduces heat generation in compact EPS ECUs, enabling passive cooling and extended service life.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V step-down converter for ADAS domain controllers.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency above 92% at full load.

Use Value: Integrated body diode with 195 ns t_rr and low V_SD enables clean zero-voltage switching transitions without shoot-through risk.

Start-Stop Battery Management

Onboard Charger (OBC) Auxiliary Supplies

Use Scenario: Load switch controlling power to infotainment and telematics during engine cranking.

IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse with fast overcurrent response via current-sense source connection.

Use Value: 80 A continuous rating and 320 A pulsed capability handle cold-cranking surge currents without thermal shutdown.

Use Scenario: Isolated auxiliary supply (12 V output) powered from 400 V OBC DC bus using flyback topology.

IC Role / Device Role / Timing Role: Primary-side MOSFET switching at 65–100 kHz with 4400 pF C_iss enabling stable gate drive loop design.

Use Value: 0.5 K/W R_thJC allows direct heatsinking to chassis, simplifying thermal layout in space-constrained OBC enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S2H4ATMA1	PG-TO220-3-1 package; higher R_thJA (62 K/W) vs. IPB's 40 K/W on 6 cm² PCB; identical R_DS(on) and ratings.	Suitable for through-hole prototyping or legacy designs where SMT footprint is unavailable.	Select when manual assembly, serviceability, or vertical heatsink mounting is required.
IPI80N04S2H4ATMA1	PG-TO262-3-1 (I2PAK); same thermal performance as IPP but with improved creepage distance for high-voltage isolation compliance.	Preferred in auxiliary supplies where reinforced insulation between primary and secondary is mandated.	Choose for safety-critical auxiliary rails requiring ≥8 mm creepage in OBC or DC-DC modules.

Compared with IPP80N04S2H4ATMA1 and IPI80N04S2H4ATMA1, IPB80N04S2H4ATMA1 offers superior thermal performance in SMT layouts due to its D²PAK package's lower R_thJA on standard PCBs, making it optimal for high-power density automotive modules where board space and thermal management are tightly constrained.

Availability

IPB80N04S2H4ATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive DC-DC converters, and start-stop battery management systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N04S2H4ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS® 40 V product line, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive subsystems including motor drives, battery protection, and power conversion.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPB80N04S2H4ATMA1 supports continuous operation up to +175 °C junction temperature, validated per AEC-Q101 stress testing. Derating begins at T_j > 150 °C, and thermal design must ensure T_j remains below this limit under worst-case ambient and power dissipation conditions.

Is the body diode suitable for synchronous rectification in a 50 kHz buck converter?

Yes - the integrated body diode exhibits 195 ns reverse recovery time and 370 nC Q_rr at 100 A/µs di/dt, enabling reliable synchronous rectification at 50 kHz. However, external Schottky diodes may still be preferred for <100 ns t_rr requirements in ultra-high-efficiency designs.

Does this MOSFET require a negative gate voltage for safe turn-off in high-noise automotive environments?

No - the device has a gate threshold voltage range of 2.1–4.0 V and is designed for positive-only gate drive (0 V to 10 V). A negative gate voltage is not required or recommended; robust noise immunity is achieved via high V_GS = ±20 V rating and low Crss (480 pF) minimizing dv/dt-induced turn-on.

Can IPB80N04S2H4ATMA1 replace IPP80N04S2H4ATMA1 in an existing TO-220 footprint?

No - IPB80N04S2H4ATMA1 uses PG-TO263-3-2 (D²PAK), which has different pad layout, thermal pad geometry, and solder stencil requirements than the PG-TO220-3-1 footprint of IPP80N04S2H4ATMA1. Board redesign is required for direct replacement.

IPB80N04S2H4ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 148 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S2H4ATMA1 FAQ

1.How can I place an order for IPB80N04S2H4ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S2H4ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S2H4ATMA1 reliable?

The price and inventory of IPB80N04S2H4ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S2H4ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S2H4ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S2H4ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S2H4ATMA1?

IPB80N04S2H4ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S2H4ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S2H4ATMA1?

For technical support, including IPB80N04S2H4ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S2H4ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S2H4ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S2H4ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S2H4ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S2H4ATMA1?

All IPB80N04S2H4ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S2H4ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S2H4ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S2H4ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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