Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFR5305CPBF

Part No.:
IRFR5305CPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR5305CPBF.pdf
Description:
MOSFET P-CH 55V 31A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,761

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR5305CPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for -55 V VDS, 0.065 Ω RDS(on) at -10 V VGS, and -31 A continuous drain current at TC = 25°C. It serves as a high-efficiency, surface-mount power switch in DC-DC converters, motor drivers, and load management circuits.

For engineers reviewing the IRFR5305CPBF datasheet, IRFR5305CPBF pinout, IRFR5305CPBF application, or IRFR5305CPBF equivalent, key selection criteria include its fully avalanche-rated capability (280 mJ EAS), fast switching performance (tr = 66 ns, tf = 63 ns), low gate charge (Qg = 63 nC), and rugged thermal design with 1.4 °C/W junction-to-case resistance.

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switching without level-shifting circuitry in buck regulators and OR-ing applications. Its body diode exhibits VSD = -1.3 V at -16 A and reverse recovery time trr = 71–110 ns under specified conditions.

The device uses fifth-generation HEXFET processing for ultra-low on-resistance per die area and integrates a fully rated intrinsic body diode suitable for synchronous rectification and unclamped inductive switching. Thermal design leverages direct die-to-case conduction via the exposed drain pad, supporting up to 110 W power dissipation at TC = 25°C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-55 V - Maximum blocking voltage in high-side switch configurations
RDS(on)0.065 Ω @ VGS = -10 V - Enables <1.5 W conduction loss at -16 A in PCB-mounted designs
ID (cont)-31 A @ TC = 25°C - Supports high-current load switching with minimal heatsinking
EAS280 mJ - Withstands single-pulse inductive energy without failure in motor drive flyback
Qg63 nC - Determines gate driver current requirement for <100 ns switching transitions
tr/tf66/63 ns - Enables >1 MHz switching in resonant and hard-switched topologies
RθJC1.4 °C/W - Allows precise junction temperature estimation using case temperature measurement

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Gate, Drain, Source) plus integrated drain tab (pin 4 = Drain).

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives negative VGS to turn on; requires ≥2.0 V threshold margin for reliable operation
2 (Drain)Main current outputConnected to exposed metal tab; must be soldered to large copper pour for thermal management
3 (Source)Reference nodeServes as return path and gate drive reference; defines system ground in high-side configurations
4 (Drain Tab)Thermal & power pathElectrically identical to pin 2; provides primary heat transfer path to PCB

Key Features

FeatureDesign Value
Fully avalanche rated280 mJ single-pulse energy tolerance enables robust operation in inductive load switching without external snubbers
Ultra-low RDS(on)0.065 Ω reduces conduction losses by >40% vs. prior-gen P-channel MOSFETs at same voltage rating
Fast switching speed14 ns turn-on delay + 66 ns rise time supports high-frequency DC-DC conversion with minimized dead-time losses
Surface-mount optimizedD-Pak footprint allows automated assembly and achieves 110 W power dissipation with standard FR-4 PCB layout
Body diode with low VSD-1.3 V forward drop at -16 A enables efficient freewheeling in synchronous buck and H-bridge topologies

Applications

DC-DC Buck ConverterIndustrial Motor Driver

Use Scenario: High-side synchronous rectification in 12 V input, 5 V/10 A output buck converter.

IC Role / Device Role / Timing Role: P-channel high-side switch replacing N-channel + driver; eliminates bootstrap complexity.

Use Value: Reduces BOM count by eliminating gate driver IC and bootstrap capacitor while maintaining <90% efficiency at full load.

Use Scenario: Bidirectional 24 V brushed DC motor control in factory automation actuator.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg with fast turn-off to prevent shoot-through during direction reversal.

Use Value: 63 ns fall time ensures <200 ns minimum off-time, meeting IEC 61800-5-1 safe torque off timing requirements.

Hot-Swap OR-ing CircuitAutomotive Load Switch

Use Scenario: Redundant 48 V power supply OR-ing in telecom shelf with inrush current limiting.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch controlling power path to backplane.

Use Value: -55 V VDS rating accommodates 48 V nominal + 20% transients; RDS(on) ensures <0.5 W loss at 15 A.

Use Scenario: Engine control unit (ECU) battery disconnect switch for 12 V accessory loads.

IC Role / Device Role / Timing Role: Protected load switch with integrated overtemperature and short-circuit response.

Use Value: Junction temperature range (-55°C to +175°C) meets AEC-Q101 ambient requirements; avalanche rating handles load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR7843PbF-40 V VDS, 0.0065 Ω RDS(on), 75 A ID - lower voltage, higher current, smaller dieBetter suited for 12 V systems requiring <10 mΩ on-resistance; not rated for 48 V bus applicationsSelect when operating voltage ≤36 V and board space is constrained; verify avalanche capability is not required
STP12PF06-60 V VDS, 0.12 Ω RDS(on), 12 A ID - higher voltage, higher RDS(on), TO-220 packageThrough-hole mounting only; higher conduction loss limits use to <5 A continuous loadsChoose for legacy through-hole designs or where thermal mass of TO-220 improves transient thermal response

Compared with IRFR5305CPBF, IRLL7843PbF offers superior conduction efficiency below 36 V but lacks its 48 V+ system compatibility and surface-mount flexibility, while STP12PF06 trades packaging convenience and RDS(on) for broader voltage margin and simpler thermal interface.

Availability

IRFR5305CPBF is available at Aetrix Electronics and suitable for industrial motor drivers, automotive load switches, DC-DC buck converters, and hot-swap OR-ing circuits requiring stable component supply and long-term production continuity.

Supply support for IRFR5305CPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device design.

The HEXFET® Power MOSFET product line delivers high-efficiency, ruggedized switching devices optimized for power conversion, motor control, and load management in harsh thermal and electrical environments.

FAQ

What is the maximum allowable gate-to-source voltage for IRFR5305CPBF?

The absolute maximum VGS rating is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable turn-on, apply -10 V to ensure full enhancement across temperature and process variation; logic-level drive (-4.5 V) yields higher RDS(on) and reduced current capability.

Can IRFR5305CPBF be used in parallel for higher current handling?

Yes, but with strict layout and gate drive matching. The device's positive RDS(on) temperature coefficient enables current sharing, yet mismatched gate resistances or PCB trace inductance can cause imbalance. Use individual 10 Ω gate resistors and symmetrical Kelvin-source routing to achieve <15% current deviation at full load.

Does IRFR5305CPBF require a heatsink in typical surface-mount applications?

No external heatsink is required if PCB copper area meets IR's recommended 1"² FR-4 footprint with internal ground plane. At 110 W power dissipation, junction temperature remains within 175°C limit only with full thermal pad soldering and ≥2 oz copper; derate linearly above 25°C ambient using 0.71 W/°C factor.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has VSD = -1.3 V at -16 A and trr = 71–110 ns - higher forward drop and slower recovery than 45 V Schottky diodes (e.g., SS34: 0.5 V, <35 ns). Use only where synchronous rectification is not required or where diode conduction is brief and infrequent.

IRFR5305CPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR5305CPBF FAQ

1.How can I place an order for IRFR5305CPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5305CPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5305CPBF reliable?

The price and inventory of IRFR5305CPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5305CPBF is usually 5 days.

3.What payment methods are accepted for IRFR5305CPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5305CPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5305CPBF?

IRFR5305CPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5305CPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5305CPBF?

For technical support, including IRFR5305CPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5305CPBF requirements.

6.How does Aetrix verify that IRFR5305CPBF is sourced from the original manufacturer or authorized distributors?

All IRFR5305CPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5305CPBF meets industry standards.

7.What is the process for return or replacement of IRFR5305CPBF?

All IRFR5305CPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5305CPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5305CPBF part is unused and in its original packaging.

Return procedure for IRFR5305CPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR5305CPBF Tags

  • IRFR5305CPBF
  • IRFR5305CPBF PDF
  • IRFR5305CPBF Datasheet
  • IRFR5305CPBF Specifications
  • IRFR5305CPBF Images
  • Infineon Technologies
  • Infineon Technologies IRFR5305CPBF
  • Buy IRFR5305CPBF
  • IRFR5305CPBF Price
  • IRFR5305CPBF Distributor
  • IRFR5305CPBF Supplier
  • IRFR5305CPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER