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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010ZLPBF

Name: IRF1010ZLPBF
Brand: Infineon Technologies
SKU: IRF1010ZLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010ZLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1010ZLPBF.pdf

Description:: MOSFET N-CH 55V 75A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1010ZLPBF from Infineon Technologies is a 55V, 75A N-channel D2Pak (TO-262) HEXFET® Power MOSFET with 7.5mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 94mJ. It serves as a high-current, low-loss switching element in DC-DC converters, motor drives, and power inverters.

For engineers reviewing the IRF1010ZLPBF datasheet, IRF1010ZLPBF pinout, IRF1010ZLPBF application, or IRF1010ZLPBF equivalent, key selection criteria include its 7.5mΩ on-resistance, 75A continuous drain current at T_C = 25°C, fast 150ns rise time, 95nC total gate charge, and D2Pak thermal performance with R_θJC = 1.11°C/W.

Technical Context

This device employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust unclamped inductive switching capability. Its design integrates a low-inductance D2Pak package, intrinsic body diode with 22–33ns reverse recovery time, and thermally optimized die attach for sustained 175°C operation.

The MOSFET supports hard-switched topologies requiring high peak current handling (360A pulsed source), low gate drive energy (Q_g = 63–95nC), and stable threshold voltage (2.0–4.0V) across temperature. Avalanche ruggedness is validated per JEDEC JESD24-11 with E_AS = 94mJ (tested) and E_AR = 66mJ (thermally limited).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and H-bridge designs.
R_DS(on)	7.5mΩ max @ V_GS = 10V, T_J = 25°C - Enables <1.5W conduction loss at 75A, critical for high-efficiency power stages.
I_D (cont)	75A @ T_C = 25°C - Sustained current capability with heatsink; derates to 130A at T_C = 100°C per silicon limit.
Q_g	63–95nC - Determines gate driver power requirement and switching speed; enables ~100kHz operation with 6.8Ω gate resistor.
T_J max	175°C - Allows operation in high-ambient industrial environments without thermal shutdown.
E_AS	94mJ (tested) - Quantifies single-pulse unclamped inductive energy handling; supports reliable operation in flyback and motor phase-legs.
R_θJC	1.11°C/W - Junction-to-case thermal resistance defines minimum heatsink interface performance for thermal management.

Pinout & Package

IRF1010ZLPBF uses the D2Pak (TO-262) surface-mount package with isolated tab, optimized for PCB thermal relief and automated assembly. The package features a copper leadframe, epoxy-molded body, and RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to exposed copper tab; must be electrically isolated from heatsink unless referenced to system ground.
Source	Return path for load current; reference for gate drive	Low-inductance internal connection (L_S = 7.5nH); critical for minimizing shoot-through risk in half-bridge configurations.
Gate	Control terminal for channel conduction	High-impedance input requiring <200nA leakage; sensitive to ESD; requires gate resistor to damp oscillation and control dV/dt.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5mΩ enables <1.5W conduction loss at full 75A rating, reducing thermal stress in high-current power supplies.
Repetitive avalanche rated	66mJ E_AR allows safe operation under transient overvoltage conditions without external snubbers in inductive loads.
Fast switching	150ns rise time and 92ns fall time support high-frequency PWM (≥100kHz) with minimal switching loss.
175°C junction rating	Extends usable lifetime in sealed enclosures or high-ambient environments such as automotive engine bays and industrial motor controllers.
Low gate charge	63–95nC Q_g reduces gate driver power consumption and simplifies selection of cost-effective drivers like IR2110 or UCC27531.

Applications

DC-DC Converters

Motor Drives

Use Scenario: High-current synchronous buck converter in telecom rectifiers and server VRMs.

IC Role / Device Role / Timing Role: Primary high-side switch handling 75A continuous output current with forced-air cooling.

Use Value: 7.5mΩ R_DS(on) reduces conduction loss by >30% versus legacy 10mΩ devices, improving efficiency from 92% to 94.5% at 48V input.

Use Scenario: Half-bridge leg in 3-phase BLDC motor controller for HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 22–33ns t_rr and 15–23nC Q_rr minimize diode recovery loss and EMI generation during commutation.

Power Inverters

Industrial UPS Systems

Use Scenario: Output stage in 1kW solar microinverter with 400V DC link.

IC Role / Device Role / Timing Role: Switching device in full-bridge topology operating at 20kHz with unclamped inductive turn-off.

Use Value: 94mJ E_AS rating ensures reliable operation during grid fault transients without external clamping circuits.

Use Scenario: Battery backup switching in 3kVA online UPS with dual-conversion architecture.

IC Role / Device Role / Timing Role: Bidirectional switch enabling seamless transfer between utility and battery power paths.

Use Value: 175°C T_J max and 1.11°C/W R_θJC allow continuous 75A operation under 40°C ambient with standard heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF55	55V V_DSS, 75A I_D, 8.5mΩ R_DS(on), TO-220 package	Higher R_DS(on) and larger R_θJA (62°C/W vs. 40°C/W for IRF1010ZLPBF PCB mount)	Preferred where through-hole assembly or lower gate charge (55nC) is prioritized over thermal performance.
IXTP75N055T	55V V_DSS, 75A I_D, 6.5mΩ R_DS(on), TO-220 package, 150°C T_J max	Lower on-resistance but reduced thermal margin (25°C lower max junction temperature)	Selected when ultra-low conduction loss is critical and ambient temperature remains below 70°C.

Compared with STP75NF55 and IXTP75N055T, IRF1010ZLPBF delivers superior thermal performance via D2Pak packaging (R_θJC = 1.11°C/W), higher avalanche energy rating (94mJ), and extended 175°C operation-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

IRF1010ZLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, power inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF1010ZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF HEXFET® product line targets high-efficiency power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance for industrial, renewable energy, and transportation applications.

FAQ

What is the maximum continuous drain current for IRF1010ZLPBF at 100°C case temperature?

The maximum continuous drain current is 130A at T_C = 100°C when limited by silicon, as specified in the Absolute Maximum Ratings table. This value assumes V_GS = 10V and accounts for R_DS(on) increase with temperature. Package limitations reduce this to 75A at T_C = 25°C, making thermal design critical for sustained high-current operation.

Does IRF1010ZLPBF have an integrated body diode, and what are its key parameters?

Yes, IRF1010ZLPBF includes an integral reverse p-n junction body diode. Key parameters include V_SD = 1.3V max at I_S = 75A, t_rr = 22–33ns, and Q_rr = 15–23nC at T_J = 25°C. These values enable efficient freewheeling in synchronous rectification and motor drive half-bridges without external diodes.

Can IRF1010ZLPBF be used in avalanche mode, and how is its energy rating verified?

Yes, IRF1010ZLPBF is rated for repetitive avalanche operation with E_AR = 66mJ and single-pulse E_AS = 94mJ (tested). These ratings are validated per JEDEC JESD24-11 using the unclamped inductive test circuit in Figures 12a–12b. Safe operation requires monitoring junction temperature to ensure T_J ≤ 175°C during avalanche events.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 2.0V to 4.0V at T_J = 25°C, with a positive temperature coefficient of approximately +0.049V/°C for V_(BR)DSS. Threshold voltage decreases slightly with rising temperature, improving turn-on consistency in high-temperature environments. Gate drive must supply ≥10V to ensure full enhancement and minimize R_DS(on).

IRF1010ZLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1010ZLPBF FAQ

1.How can I place an order for IRF1010ZLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010ZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010ZLPBF reliable?

The price and inventory of IRF1010ZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010ZLPBF is usually 5 days.

3.What payment methods are accepted for IRF1010ZLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010ZLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010ZLPBF?

IRF1010ZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010ZLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010ZLPBF?

For technical support, including IRF1010ZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010ZLPBF requirements.

6.How does Aetrix verify that IRF1010ZLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010ZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010ZLPBF meets industry standards.

7.What is the process for return or replacement of IRF1010ZLPBF?

All IRF1010ZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010ZLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010ZLPBF part is unused and in its original packaging.

Return procedure for IRF1010ZLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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