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Infineon Technologies BSC0908NSATMA1
- Part No.:
- BSC0908NSATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC0908NSATMA1.pdf
- Description:
- MOSFET N-CH 34V 14A/49A TDSON
- Quantity:
- Payment:
- Shipping:
Inventory:6,255
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Product details
Overview
BSC0908NSATMA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TDSON-8 package, rated for 34 V VDS, 8.0 mΩ RDS(on) at VGS = 10 V, and 49 A continuous drain current at TC = 25 °C. It features optimized switching behavior for DC/DC converters and SMPS, avalanche-rated operation, and RoHS/halogen-free compliance.
For engineers reviewing the BSC0908NSATMA1 datasheet, BSC0908NSATMA1 pinout, BSC0908NSATMA1 application, or BSC0908NSATMA1 equivalent, key selection criteria include its low gate charge × RDS(on) figure of merit (FOM), 3.4 V gate plateau voltage, 14 nC total gate charge at 10 V, and thermal resistance of 4.2 K/W (junction-to-case, bottom side).
Technical Context
This OptiMOS™ device uses trench-based silicon technology to achieve high cell density and low conduction loss. Its logic-level gate drive (VGS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V controllers, while the 12.8 mΩ max RDS(on) at 4.5 V supports high-efficiency synchronous rectification.
The MOSFET integrates a robust body diode with Qrr = 5 nC and VSD = 0.9 V at 30 A, enabling fast recovery in buck and half-bridge topologies. Its 10 mJ single-pulse avalanche energy rating ensures ruggedness under transient overvoltage conditions in unregulated power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 34 V - Supports 24 V input rail designs with margin against transients |
| RDS(on) max @ 10 V | 8.0 mΩ - Enables ≤1.5 W conduction loss at 30 A in compact thermal layouts |
| Qg total @ 10 V | 14 nC - Reduces gate driver power demand and switching losses in high-frequency SMPS |
| VGS(th) | 1.2–2.0 V - Ensures full enhancement with standard logic-level microcontrollers |
| RthJC (bottom) | 4.2 K/W - Allows >25 W power dissipation with minimal junction-to-heatsink temperature rise |
| Avalanche Energy EAS | 10 mJ - Withstands single-pulse inductive kickback without failure in flyback or boost converters |
| Diode Forward Voltage | 0.9 V @ 30 A - Minimizes reverse conduction loss during dead-time in synchronous FET operation |
Pinout & Package
Package: PG-TDSON-8 (Power Thin Dual Flat No-Lead, 8-pin, exposed drain pad on bottom). Dimensions per Infineon outline PG-TDSON-8-5: 5.15 mm × 6.20 mm × 1.05 mm, thermal pad area ≈ 30 mm².
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (all connected to exposed drain pad) | Drain (D) | Primary current path and main thermal interface; must be soldered to large PCB copper pour |
| Source (S) | Source (S) | Pin 1 only - referenced ground node for gate drive and current sensing; not shared with drain |
| Gate (G) | Gate (G) | Pin 8 only - high-impedance control terminal requiring low-inductance routing to minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.2–2.0 V enables direct drive from 3.3 V MCU GPIOs without level-shifting |
| Low gate charge × RDS(on) | FOM = ~112 mΩ·nC - balances switching speed and conduction loss for 500 kHz–1 MHz DC/DC |
| Avalanche-rated operation | Rated for 35 A single-pulse IAS and 10 mJ EAS - eliminates need for external snubbers in hard-switched topologies |
| Thermal performance | RthJC = 4.2 K/W (bottom) - delivers 30 W Ptot capability with minimal heatsink requirement |
| RoHS & halogen-free | Compliant with IEC61249-2-21 and JEDEC J-STD-20 - meets industrial and automotive environmental standards |
Applications
| Server VRM | Industrial DC/DC Converter |
|---|---|
Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter operating at 600–1000 kHz. Use Value: 8.0 mΩ RDS(on) and 14 nC Qg reduce both conduction and switching losses, improving efficiency above 92% at 50 A output. | Use Scenario: Isolated 24 V to 5 V/12 V DC/DC supply in PLC backplane modules. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter. Use Value: 34 V rating and 10 mJ avalanche energy tolerate bus transients up to 30 V without clamping circuitry. |
| Automotive ADAS Camera Power | USB-C PD Fast Charger |
Use Scenario: Compact 12 V input to 3.3 V/5 V power rail for radar sensor SoCs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck converter with 2 MHz switching frequency. Use Value: Logic-level VGS(th) ensures reliable turn-on with 3.3 V controller outputs; 0.9 V VSD minimizes reverse conduction loss during dead time. | Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD charger with GaN primary. IC Role / Device Role / Timing Role: 34 V-rated low-RDS(on) FET replacing Schottky diode in LLC + SR topology. Use Value: 12.8 mΩ max RDS(on) at 4.5 V allows full enhancement from 5 V gate drive, reducing rectifier loss by >40% vs. 40 V Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | 30 V VDS, 9.5 mΩ RDS(on) @ 4.5 V, 11 nC Qg, SO-8 package | Limited to ≤24 V systems; higher RDS(on) increases conduction loss at >25 A | Preferable where board space permits SO-8 and 30 V rating suffices |
| DMN3025LFG-7 | 30 V VDS, 2.5 mΩ RDS(on) @ 10 V, 17 nC Qg, SOT-23-6 package | Lower RDS(on) but higher Qg; limited to ≤12 A continuous due to package thermal limits | Suitable for low-current, space-constrained loads (<10 A), not for server VRM or chargers |
Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSC0908NSATMA1 uniquely combines 34 V rating, sub-8 mΩ RDS(on), and 14 nC Qg in a thermally optimized PG-TDSON-8 package-making it optimal for high-current, high-frequency 24–32 V input DC/DC stages where thermal headroom and avalanche robustness are critical.
Availability
BSC0908NSATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, automotive ADAS camera power supplies, and USB-C PD fast chargers requiring stable component supply and long-term lifecycle support.
Supply support for BSC0908NSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
BSC0908NSATMA1 belongs to the OptiMOS™ 30 V/34 V logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing, industrial, and automotive power systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The BSC0908NSATMA1 supports 31 A continuous drain current at TC = 100 °C and VGS = 10 V. This rating reflects derating due to thermal resistance and is validated under JEDEC-compliant test conditions using a standardized heatsink setup.
Does this MOSFET require a gate resistor for stability in high-frequency switching?
Yes-a gate resistor (typically 1.6 Ω externally) is recommended to dampen ringing caused by parasitic inductance and the MOSFET's 3.0 Ω typical gate resistance. Infineon's gate charge test condition specifies RG,ext = 1.6 Ω for accurate timing characterization.
Is the body diode suitable for synchronous rectification without external control?
No-the body diode is not intended for uncontrolled freewheeling. For synchronous rectification, the gate must be actively driven with precise timing to avoid shoot-through; the 0.9 V VSD and 5 nC Qrr support efficient controlled commutation when paired with a dedicated SR controller.
Can this part replace a standard 40 V MOSFET in a 36 V nominal system?
No-its 34 V V(BR)DSS rating provides only 2 V margin above 36 V nominal, violating safe operating area guidelines. It is qualified for 24 V and 32 V systems with transient allowances up to 34 V, not sustained 36 V operation.
BSC0908NSATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 34 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1220 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-1
BSC0908NSATMA1 FAQ
1.How can I place an order for BSC0908NSATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC0908NSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC0908NSATMA1 reliable?
The price and inventory of BSC0908NSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0908NSATMA1 is usually 5 days.
3.What payment methods are accepted for BSC0908NSATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0908NSATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC0908NSATMA1?
BSC0908NSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC0908NSATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC0908NSATMA1?
For technical support, including BSC0908NSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0908NSATMA1 requirements.
6.How does Aetrix verify that BSC0908NSATMA1 is sourced from the original manufacturer or authorized distributors?
All BSC0908NSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0908NSATMA1 meets industry standards.
7.What is the process for return or replacement of BSC0908NSATMA1?
All BSC0908NSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0908NSATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC0908NSATMA1 part is unused and in its original packaging.
Return procedure for BSC0908NSATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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