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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1010EZLPBF

Name: IRF1010EZLPBF
Brand: Infineon Technologies
SKU: IRF1010EZLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1010EZLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF1010EZLPBF.pdf

Description:: MOSFET N-CH 60V 75A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:6,298

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Product details

Overview

IRF1010EZLPBF from Infineon Technologies (formerly International Rectifier) is a TO-262-packaged N-channel enhancement-mode Power MOSFET designed for high-current DC-DC conversion, motor drive, and power switching applications. It delivers 75 A continuous drain current at T_C = 25°C, 60 V drain-source breakdown voltage, and ultra-low 8.5 mΩ R_DS(on) at V_GS = 10 V, enabling high-efficiency operation in industrial inverters and UPS systems.

For engineers reviewing the IRF1010EZLPBF datasheet, IRF1010EZLPBF pinout, IRF1010EZLPBF application, or IRF1010EZLPBF equivalent, key selection criteria include its 175°C maximum junction temperature, 99 mJ single-pulse avalanche energy rating, repetitive avalanche capability up to T_jmax, fast 90 ns rise time, and lead-free D²Pak-compatible TO-262 package with isolated tab.

Technical Context

This device employs advanced HEXFET® silicon processing to minimize conduction losses while maintaining robust switching performance. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, and its 58 nC total gate charge supports efficient gate driving in hard-switched topologies.

The integrated body diode exhibits 1.3 V forward voltage at 51 A and 41–62 ns reverse recovery time, supporting synchronous rectification and freewheeling in half-bridge configurations. Thermal design is facilitated by 1.11 °C/W junction-to-case resistance and validated unclamped inductive avalanche performance under defined L = 0.077 mH, R_G = 25 Ω conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems.
R_DS(on)	8.5 mΩ max @ V_GS = 10 V - Enables <1.5 W conduction loss at 75 A, critical for thermal management in high-current PCB layouts.
I_D (continuous)	75 A @ T_C = 25°C - Sustains full-load current in motor drives without derating when heatsinked to 25°C case temperature.
E_AS	99 mJ - Single-pulse avalanche energy rating verified 100% in production; allows safe operation during inductive turn-off transients.
Q_g	58–86 nC - Total gate charge determines driver power requirement and switching speed trade-off in PWM controllers.
T_J max	175°C - Enables reliable operation in sealed enclosures or high-ambient environments without forced air cooling.
t_r/t_f	90 ns / 54 ns - Fast switching transitions reduce overlap losses in bridge circuits, improving efficiency above 20 kHz.

Pinout & Package

IRF1010EZLPBF uses the TO-262 (ISOTOP) package: 3-pin, through-hole, isolated metal tab (drain-connected), plastic body, RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Provides low-inductance, high-current path to heatsink; requires insulating washer if heatsink is grounded.
Source	Reference node for gate drive and current return path	Serves as common reference for gate control and sense point in current-monitoring circuits.
Gate	Control electrode for channel formation	Requires ≤±20 V gate-source voltage; 2.0–4.0 V threshold enables direct microcontroller interface with appropriate buffering.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.5 mΩ max ensures <1.5 W conduction loss at 75 A, reducing heatsink size and system cost in high-current designs.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in motor drive flyback paths.
175°C operating temperature	Enables deployment in harsh environments (e.g., industrial motor controls, solar inverters) without thermal derating penalties.
Fast switching (t_r = 90 ns)	Minimizes transition losses in high-frequency SMPS and Class-D amplifiers, supporting >100 kHz operation with low EMI.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: High-current H-bridge inverter stage controlling 3-phase AC induction motors up to 5 kW.

IC Role / Device Role / Timing Role: Main switching element in low-side and high-side legs; handles bidirectional current with body diode freewheeling.

Use Value: 75 A continuous rating and 99 mJ avalanche energy eliminate need for parallel devices or external clamping, simplifying layout and improving reliability.

Use Scenario: DC-AC inverter stage converting 48 V battery bank to 120/230 V AC output in line-interactive UPS.

IC Role / Device Role / Timing Role: Primary power switch in full-bridge topology; operates at 20–50 kHz with synchronous rectification support.

Use Value: 60 V V_DSS safely accommodates 48 V nominal bus with 20% ripple and transient spikes; 8.5 mΩ R_DS(on) maintains >95% efficiency at full load.

DC-DC Converters

Automotive Battery Management

Use Scenario: High-current synchronous buck converter stepping 48 V input to 12 V for vehicle subsystems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET; conducts during freewheeling phase with minimal V_SD drop.

Use Value: Body diode V_SD ≤1.3 V and Q_rr = 54–81 nC enable efficient synchronous operation without shoot-through risk.

Use Scenario: High-side load switch isolating 12 V battery from infotainment and ADAS modules during sleep mode.

IC Role / Device Role / Timing Role: Power distribution switch with controlled inrush and fault protection via current sensing at source.

Use Value: 175°C T_Jmax and 100% tested avalanche rating ensure survival during load dump transients (ISO 7637-2 Pulse 5a).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 A, 75 V V_DSS, 10.5 mΩ R_DS(on), TO-220 package	Higher voltage rating but higher on-resistance and lower thermal performance (R_θJC = 1.5 °C/W)	Select when 75 V blocking is required and board space permits larger heatsink footprint.
IXTH75N10L2	75 A, 100 V V_DSS, 12 mΩ R_DS(on), TO-247 package	Higher voltage and package thermal resistance (1.0 °C/W), no avalanche rating specified	Prefer for 100 V systems where avalanche robustness is secondary to voltage margin.

Compared with STP75NF75 and IXTH75N10L2, IRF1010EZLPBF offers superior thermal efficiency (1.11 °C/W), verified repetitive avalanche capability, and optimized 60 V/75 A balance for 48 V industrial and automotive power stages-making it the most thermally and transient-robust choice in its class.

Availability

IRF1010EZLPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, DC-DC converters, and automotive battery management systems requiring stable component supply and long-term lifecycle support.

Supply support for IRF1010EZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial automation, renewable energy, and transportation systems where thermal resilience and transient robustness are critical.

FAQ

What is the maximum gate-source voltage rating for IRF1010EZLPBF?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS between –10 V (to ensure full turn-off) and +10 V (to achieve minimum R_DS(on)), with transient overshoot suppressed using Zener diodes or active clamping.

Does IRF1010EZLPBF support gate driving directly from a 3.3 V microcontroller?

No-it has a gate threshold voltage range of 2.0–4.0 V, but achieving full enhancement (≤8.5 mΩ R_DS(on)) requires V_GS ≥10 V. A 3.3 V GPIO cannot fully turn on the device; a gate driver IC (e.g., TC4420) or level-shifting circuit is mandatory for low-loss operation.

How is the drain tab electrically isolated in the TO-262 package?

The metal drain tab is internally connected to the MOSFET's drain terminal and is not insulated from the silicon die. When mounted to a heatsink, an electrically isolating pad (e.g., mica or polymer film) and shoulder washer must be used to prevent shorting unless the heatsink is intentionally tied to the drain potential.

Is IRF1010EZLPBF suitable for synchronous rectification in a buck converter?

Yes-the device's low R_DS(on) (8.5 mΩ), fast body diode (t_rr = 41–62 ns), and low Q_rr (54–81 nC) make it well-suited for low-side synchronous rectification in 48 V input buck converters. Gate timing must avoid shoot-through, and source sensing is recommended for accurate current monitoring.

IRF1010EZLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 51A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF1010EZLPBF FAQ

1.How can I place an order for IRF1010EZLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1010EZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1010EZLPBF reliable?

The price and inventory of IRF1010EZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1010EZLPBF is usually 5 days.

3.What payment methods are accepted for IRF1010EZLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1010EZLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1010EZLPBF?

IRF1010EZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1010EZLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1010EZLPBF?

For technical support, including IRF1010EZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1010EZLPBF requirements.

6.How does Aetrix verify that IRF1010EZLPBF is sourced from the original manufacturer or authorized distributors?

All IRF1010EZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1010EZLPBF meets industry standards.

7.What is the process for return or replacement of IRF1010EZLPBF?

All IRF1010EZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF1010EZLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1010EZLPBF part is unused and in its original packaging.

Return procedure for IRF1010EZLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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