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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC057N03MSGATMA1

Name: BSC057N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC057N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC057N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC057N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 15A/71A TDSON

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Product details

Overview

BSC057N03MSGATMA1 from Infineon Technologies is an N-channel Power-MOSFET in the OptiMOS™3 M-Series, optimized for 5 V gate drive in notebook CPU VRMs and point-of-load (POL) converters. It delivers 71 A continuous drain current at T_C = 25 °C with V_GS = 10 V, features a 30 V V_(BR)DSS, 5.7 mΩ R_DS(on) max at V_GS = 10 V, and is 100% avalanche tested for robustness in high-frequency synchronous buck stages.

For engineers reviewing the BSC057N03MSGATMA1 datasheet, BSC057N03MSGATMA1 pinout, BSC057N03MSGATMA1 application, or BSC057N03MSGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), JEDEC-qualified thermal performance, and validated operation under 4.5 V gate drive in compact DC/DC power stages.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low R_DS(on) and fast switching in high-efficiency, high-frequency SMPS topologies. Its dynamic parameters-C_iss = 2300–3100 pF, C_oss = 710–940 pF, Q_g = 14–19 nC at 10 V, and Q_g(sync) = 12–17 nC at 4.5 V-support efficient synchronous rectification and tight-duty-cycle control.

The device integrates a robust body diode with Q_rr ≤ 10 nC and V_SD = 0.87–1.1 V at I_F = 30 A, enabling low-loss reverse recovery in POL converters. Thermal resistance R_thJC = 2.8 K/W (bottom side) ensures effective heat transfer to PCB copper when mounted on a 6 cm² cooling area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 24 V input rails with margin for transient spikes in POL and VGA power stages
R_DS(on) max @ V_GS = 4.5 V	7.2 mΩ - Enables high-current, low-voltage output stages with minimal conduction loss at 5 V drive
I_D Continuous @ T_C = 25 °C	63 A @ 4.5 V - Sustains high load currents in notebook CPU/GPU VRMs without external gate drivers
Q_g(sync) @ 4.5 V	12–17 nC - Low gate charge enables efficient 1–2 MHz switching in synchronous buck converters
R_thJC (bottom)	2.8 K/W - Allows direct thermal coupling to heatsink or PCB copper, critical for thermally constrained mobile designs
Avalanche Energy E_AS	25 mJ @ I_D = 40 A - Confirmed single-pulse ruggedness for inductive load switching and fault tolerance
Diode Forward Voltage V_SD	0.87–1.1 V @ I_F = 30 A - Reduces body-diode conduction loss during dead-time in synchronous rectification

Pinout & Package

PG-TDSON-8-5 package: 5 mm × 6 mm exposed-drain DFN with 8 terminals; bottom-side thermal pad for enhanced heat dissipation. Pin 1 marked by notch or dot; leads are lead-free and RoHS/halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All pins 1–8 connect internally to the drain terminal and exposed thermal pad - must be soldered to large copper pour for thermal and electrical integrity
Source (pins 1–8 via internal tie)	Source node (source bond wires)	Internal source connections routed to dedicated source pads - requires low-inductance layout to minimize switching ringing
Gate (pin 8)	Control input	Single gate terminal; low input capacitance (C_iss typ. 2700 pF) supports clean 4.5 V logic-level drive without overshoot

Key Features

Feature	Design Value
Optimized 5 V gate drive	Guaranteed R_DS(on) ≤ 7.2 mΩ at V_GS = 4.5 V - eliminates need for level-shifting in modern controller ICs
Low FOM (Q_g × R_DS(on))	~100–130 nC·mΩ - balances switching loss and conduction loss for >1 MHz POL efficiency
100% unclamped inductive avalanche tested	E_AS = 25 mJ - verified ruggedness for hard-switching and overcurrent events without derating
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 - meets industrial temperature cycling and humidity requirements for embedded computing
Superior thermal resistance	R_thJC = 2.8 K/W (bottom) - enables >40 W power handling on standard FR4 PCB with 6 cm² copper

Applications

Notebook CPU VRM

VGA GPU Power Stage

Use Scenario: High-density, multi-phase buck converter supplying 0.8–1.5 V at up to 100 A to mobile CPUs.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET in 500 kHz–1.5 MHz multiphase topology, driven directly by 4.5 V controller outputs.

Use Value: Low R_DS(on) and Q_g(sync) reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% vs. legacy 12 V gate-drive MOSFETs.

Use Scenario: Dual-phase 12 V input → 1.0 V output converter powering discrete graphics processing units in ultrabooks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode with <10 ns dead time.

Use Value: Body diode V_SD ≤ 1.1 V and Q_rr ≤ 10 nC minimize reverse recovery loss and EMI during freewheeling.

Point-of-Load Converter

Server Memory Regulator

Use Scenario: Single-phase 5 V input → 1.2 V output regulator delivering up to 40 A to DDR5 memory subsystems.

IC Role / Device Role / Timing Role: Main switch in compact 3 × 3 mm footprint design, operating at 1.2 MHz with 4.5 V gate drive.

Use Value: PG-TDSON-8-5 package with 2.8 K/W R_thJC sustains 40 A continuous current without forced air, reducing system thermal complexity.

Use Scenario: Distributed 3.3 V → 1.1 V regulators on server DIMM modules with strict space constraints.

IC Role / Device Role / Timing Role: Integrated power stage component in integrated POL modules requiring JEDEC-qualified reliability and low-profile packaging.

Use Value: Halogen-free, RoHS-compliant construction and -55 °C to +150 °C operating range support long-term field deployment in datacenter environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 6.2 mΩ @ 4.5 V; Q_g = 15.5 nC; SO-8 package with higher R_thJA (62 K/W)	Larger footprint, lower thermal performance - suitable only for lower-current (<25 A), non-PCB-cooled designs	Select if SO-8 compatibility required and thermal budget allows ≥2× board area
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 4.5 V; Q_g = 22 nC; dual-N in SO-8; higher gate charge increases switching loss	Higher conduction efficiency but reduced 1 MHz efficiency due to elevated Q_g; not qualified for automotive temp range	Prefer for ultra-low R_DS(on) priority where gate drive strength and layout inductance permit

Compared with IRLHS6242PBF and DMN3025LSD-13, BSC057N03MSGATMA1 offers balanced FOM, JEDEC qualification, and superior thermal resistance in a compact DFN - making it optimal for space-constrained, high-reliability notebook and server POL designs requiring 4.5 V drive.

Availability

BSC057N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, VGA GPU power stages, and point-of-load converters requiring stable component supply, JEDEC-qualified reliability, and thermal performance in compact DFN packages.

Supply support for BSC057N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 M-Series - engineered specifically for high-efficiency, high-frequency DC/DC conversion in mobile computing and server power delivery systems using 5 V logic-level gate drive.

FAQ

Is BSC057N03MSGATMA1 suitable for 4.5 V gate drive without external level shifting?

Yes. The device is explicitly optimized for 5 V driver applications and guarantees R_DS(on) ≤ 7.2 mΩ at V_GS = 4.5 V, with V_GS(th) between 1 V and 2 V. Its gate threshold and low Q_g(sync) enable direct interface with common PWM controllers such as ISL95836 or RT8805A without level shifters.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C and V_GS = 4.5 V, the rated continuous drain current is 40 A. This value accounts for thermal derating and junction-to-case thermal resistance (R_thJC = 2.8 K/W), ensuring safe operation under sustained high-power conditions in thermally managed PCB layouts.

Does this MOSFET include integrated ESD protection on the gate?

No. BSC057N03MSGATMA1 does not integrate gate ESD protection diodes. External gate resistors (typically 5–10 Ω) and TVS clamping are recommended in high-noise environments. The gate oxide is rated for ±16 V V_GS, and exceeding this risks permanent damage even with brief transients.

Can the body diode handle repetitive reverse recovery stress in synchronous buck operation?

Yes. The device's body diode is characterized with Q_rr ≤ 10 nC and exhibits controlled dv/dt capability of 6 kV/µs. When used with proper dead-time control and gate drive strength, it supports reliable synchronous rectification across 500 kHz–2 MHz switching frequencies without excessive voltage overshoot or thermal runaway.

BSC057N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC057N03MSGATMA1 FAQ

1.How can I place an order for BSC057N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC057N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC057N03MSGATMA1 reliable?

The price and inventory of BSC057N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC057N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC057N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC057N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC057N03MSGATMA1?

BSC057N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC057N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC057N03MSGATMA1?

For technical support, including BSC057N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC057N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC057N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC057N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC057N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC057N03MSGATMA1?

All BSC057N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC057N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC057N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC057N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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