Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3306GPBF

Name: IRFB3306GPBF
Brand: Infineon Technologies
SKU: IRFB3306GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFB3306GPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3306GPBF.pdf

Description:: MOSFET N-CH 60V 120A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,888

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFB3306GPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 120 A (package-limited), 3.3 mΩ typ. N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification where low R_DS(on), fast body diode recovery (t_rr = 31 ns), and robust avalanche capability (E_AS = 230 mJ) are critical.

For engineers reviewing the IRFB3306GPBF datasheet, IRFB3306GPBF pinout, IRFB3306GPBF application, or IRFB3306GPBF equivalent, key selection criteria include gate charge (Q_g = 85 nC), output capacitance (C_{oss eff.(TR)} = 880 pF), thermal resistance (R_θJC = 0.65 °C/W), and body diode dI/dt rating (≤1400 A/µs) in high-efficiency power conversion designs.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted source metallization to achieve simultaneous low conduction loss and fast switching. Its enhanced body diode supports high dI/dt (1400 A/µs) and low Q_rr (34 nC) under hard commutation at 125°C.

The device features fully characterized SOA curves up to 100 µs pulse width, thermally limited avalanche energy rating (E_AS = 230 mJ @ T_J = 25°C), and specified C_{oss eff.(ER)} (720 pF) for accurate snubber and resonant circuit design in LLC and phase-shifted full-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus and 36 V automotive auxiliary systems.
R_DS(on) typ.	3.3 mΩ @ V_GS = 10 V, T_J = 25°C - Delivers ≤0.6 W conduction loss at 120 A, critical for <95% efficiency in 1 kW server PSUs.
Q_g	85 nC max - Determines gate drive power requirement; enables <100 ns turn-on with 1 A peak driver in 500 kHz ZVS circuits.
t_rr	31 ns @ T_J = 25°C - Enables zero-voltage switching in synchronous rectifiers without external Schottky clamping.
E_AS	230 mJ - Specifies single-pulse unclamped inductive switching margin; supports reliable operation in UPS and motor drive fault conditions.
R_θJC	0.65 °C/W - Defines junction-to-case thermal path; allows 120 A continuous current with ≤80°C case temperature rise.
I_SD max	75 A - Maximum continuous reverse diode conduction current; sets usable range for bidirectional DC-DC converters.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.1 N·m maximum mounting torque. Not recommended for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control electrode requiring 10 V threshold (V_GS(th) = 2.0–4.0 V); internal R_G = 0.7 Ω limits dv/dt-induced false turn-on.
D	Drain	Main high-side power terminal; electrically connected to metal tab; requires insulated mounting hardware for floating applications.
S	Source	Power return and gate reference node; defines local ground for gate driver; carries full load current and body diode reverse recovery charge.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Rated ≤1400 A/µs - Enables reliable operation in high-di/dt synchronous rectifier circuits without oscillation or latch-up.
Thermally limited avalanche energy	E_AS = 230 mJ - Provides validated overvoltage ruggedness during unclamped inductive switching in UPS and PFC stages.
Low C_{oss eff.(TR)}	880 pF - Reduces turn-off losses and improves ZVS initiation margin in resonant converters operating above 300 kHz.
Lead-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU - Ensures compatibility with lead-free reflow profiles and environmental compliance for industrial end equipment.
Characterized SOA at multiple pulse widths	Validated up to 100 µs - Supports safe operation in hard-switched flyback and forward converters with known worst-case transient stress.

Applications

Server Power Supply

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch and secondary-side synchronous rectifier in 1 kW, 500 kHz LLC resonant converter.

IC Role / Device Role / Timing Role: High-side power switch with precise timing-controlled ZVS turn-on and body-diode-assisted freewheeling.

Use Value: Achieves 96.2% peak efficiency by minimizing conduction loss (3.3 mΩ) and reducing dead-time-related conduction loss via fast t_rr = 31 ns.

Use Scenario: Inverter bridge switch in online double-conversion UPS delivering 3 kVA with battery backup.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10 kHz PWM inverter stage with active short-circuit protection.

Use Value: Eliminates IGBT tail current loss while maintaining E_AS = 230 mJ fault margin during grid-spike events.

Industrial Motor Drive

High-Frequency DC-DC Converter

Use Scenario: Half-bridge leg in 2 kW servo drive with regenerative braking and active current limiting.

IC Role / Device Role / Timing Role: Bidirectional power switch handling both motoring and generating current via body diode conduction.

Use Value: Sustains 75 A continuous reverse current (I_SD) with V_SD ≤ 1.3 V, reducing heat sink size by 35% vs. discrete diode solutions.

Use Scenario: Primary switch in 48 V–12 V isolated bidirectional DC-DC converter for EV battery management systems.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side with controlled reverse recovery to prevent cross-conduction.

Use Value: Limits Q_rr to 34 nC at 125°C, enabling 300 kHz operation without shoot-through risk in phase-shift modulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 60 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N6F6	R_DS(on) = 3.0 mΩ (lower), Q_g = 105 nC (higher), t_rr = 42 ns (slower), TO-220FP package (lower PD).	Higher gate drive loss and slower diode recovery limit use in >300 kHz ZVS designs.	Prefer when lowest conduction loss dominates and switching frequency ≤150 kHz.
IXFH120N60X3	R_DS(on) = 4.2 mΩ (higher), Q_g = 62 nC (lower), E_AS = 320 mJ (higher), TO-247 package (higher PD).	Superior avalanche margin but larger footprint and higher R_DS(on) increases conduction loss at 100+ A.	Prefer for mission-critical industrial inverters requiring extended fault-withstand capability.

Compared with STP120N6F6 and IXFH120N60X3, IRFB3306GPBF offers the optimal balance of low Q_g/R_DS(on) ratio (25.8 nC/mΩ) and fast t_rr, making it uniquely suited for high-frequency, high-efficiency SMPS where thermal and switching losses must be jointly minimized.

Availability

IRFB3306GPBF is available at Aetrix Electronics and suitable for server power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFB3306GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFB3306GPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial-grade SMPS, UPS, and motor control applications.

FAQ

What is the maximum continuous drain current for IRFB3306GPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 110 A, determined by silicon-limited conduction and thermal derating from the 120 A package limit at 25°C. This value assumes proper heatsinking with R_θJC = 0.65 °C/W and ambient conditions that maintain T_J ≤ 175°C.

Is IRFB3306GPBF suitable for synchronous rectification in a 48 V input DC-DC converter?

Yes - its 31 ns reverse recovery time, 1.3 V body diode forward voltage, and 75 A continuous source current rating make it well-suited for secondary-side synchronous rectification in 48 V–12 V isolated converters operating up to 500 kHz, provided gate drive timing avoids cross-conduction.

Does IRFB3306GPBF have a specified gate resistor value for optimal switching performance?

No fixed gate resistor is specified, but the internal gate resistance is 0.7 Ω. External gate resistors between 2.7 Ω and 10 Ω are commonly used to balance switching speed (t_d(on) = 15 ns, t_f = 77 ns) against EMI and voltage overshoot in hard-switched applications.

Can IRFB3306GPBF replace an IGBT in a 10 kHz inverter stage?

Yes - its 60 V rating, 120 A current capacity, and 230 mJ avalanche energy enable direct replacement of 600 V/30 A IGBTs in low-bus-voltage (<60 V) inverter stages where switching speed and conduction loss outweigh tail-current trade-offs, such as in compact UPS inverters.

IRFB3306GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4520 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3306GPBF FAQ

1.How can I place an order for IRFB3306GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3306GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3306GPBF reliable?

The price and inventory of IRFB3306GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3306GPBF is usually 5 days.

3.What payment methods are accepted for IRFB3306GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3306GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3306GPBF?

IRFB3306GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3306GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3306GPBF?

For technical support, including IRFB3306GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3306GPBF requirements.

6.How does Aetrix verify that IRFB3306GPBF is sourced from the original manufacturer or authorized distributors?

All IRFB3306GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3306GPBF meets industry standards.

7.What is the process for return or replacement of IRFB3306GPBF?

All IRFB3306GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3306GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3306GPBF part is unused and in its original packaging.

Return procedure for IRFB3306GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.