My Inquiry
My Account
Infineon Technologies BSP296L6327HTSA1
- Part No.:
- BSP296L6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP296L6327HTSA1.pdf
- Description:
- MOSFET N-CH 100V 1.1A SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:9,110
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSP296L6327HTSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode SIPMOS® small-signal power MOSFET with 100 V VDS, 1 A continuous drain current at TA = 42 °C, 0.8 Ω RDS(on) at VGS = 10 V, and gate threshold voltage of 0.8–2.0 V. It integrates a built-in body diode and is optimized for low-voltage switching in DC-DC converters, LED drivers, and load-switching circuits.
For engineers reviewing the BSP296L6327HTSA1 datasheet, BSP296L6327HTSA1 pinout, BSP296L6327HTSA1 application, or BSP296L6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) ≤ 2.0 V), thermal resistance (RthJA ≤ 70 K/W), and pulsed current capability (IDpuls = 4 A).
Technical Context
This MOSFET operates in enhancement mode with a silicon-based SIPMOS® structure, enabling fast switching via low input capacitance (Ciss = 300–400 pF) and moderate transconductance (gfs = 0.5–1.3 S). Its logic-level gate allows direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
The device features a monolithic construction with integrated body diode (VSD = 0.95–1.3 V at IF = 2 A), rated for continuous reverse diode current up to 1 A, and supports safe operating area (SOA) compliance under single-pulse conditions up to 100 V and 1 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - maximum blocking voltage for 24–48 V industrial bus and automotive subsystem applications |
| ID (continuous) | 1 A at TA = 42 °C - usable in compact PCB layouts with minimal heatsinking |
| RDS(on) | 0.8 Ω max at VGS = 10 V - ensures <0.8 W conduction loss at 1 A, suitable for thermally constrained designs |
| VGS(th) | 0.8–2.0 V - enables reliable turn-on with standard logic outputs (3.3 V/5 V MCU GPIO) |
| Ciss | 300–400 pF - balances switching speed and EMI control in 100–500 kHz SMPS topologies |
| Ptot | 1.8 W at TA = 25 °C - defines thermal derating envelope on standard FR-4 with 6 cm² copper pour |
| tf | 65–85 ns - supports efficient hard-switched operation in low-power DC-DC converters |
Pinout & Package
SOT-223 package with 4-pin configuration (G-D-S-D), featuring exposed drain pad for thermal dissipation and dual drain terminals to reduce source inductance in high-di/dt switching paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; accepts logic-level voltage (≥2.0 V) to fully enhance channel |
| Pin 2 | Drain (D) | Main current-carrying terminal; connected to high-side or low-side switch node |
| Pin 3 | Source (S) | Reference node for gate drive; tied to ground or return path in low-side configuration |
| Pin 4 | Drain (D) | Second drain connection; paralleled with Pin 2 to lower thermal resistance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.0 V enables direct interface with 3.3 V microcontrollers without external level shifters |
| Dual-drain SOT-223 | Two drain pins reduce package inductance and improve thermal transfer to PCB copper area |
| Integrated body diode | VSD = 0.95 V typ at 2 A allows freewheeling in buck or flyback topologies without external diode |
| Low RthJA | ≤70 K/W on 40 mm × 40 mm × 1.5 mm PCB with 6 cm² drain copper - simplifies thermal design |
| ESD robustness | HBM Class 1 rating (≥2 kV) ensures handling safety during manual assembly and rework |
Applications
| LED Constant-Current Driver | USB Power Switch |
|---|---|
Use Scenario: Driving high-brightness LEDs from 12–24 V supply with PWM dimming. IC Role / Device Role / Timing Role: Low-side switch controlling LED string current path. Use Value: Logic-level gate ensures full enhancement at 3.3 V MCU PWM output; RDS(on) ≤ 0.8 Ω limits power loss to <0.8 W at 1 A. | Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices with overcurrent protection. IC Role / Device Role / Timing Role: Load switch isolating downstream ports during fault or standby. Use Value: Fast turn-off (tf ≤ 85 ns) and low VGS(th) enable rapid response to host controller commands. |
| DC-DC Buck Converter High-Side Switch | Industrial Sensor Interface Protection |
Use Scenario: High-side switching element in non-synchronous 24 V input buck regulator delivering 5 V/1 A. IC Role / Device Role / Timing Role: Main power switch modulated at 250 kHz with 10 V gate drive. Use Value: Ciss = 350 pF typical minimizes gate drive power; SOA supports 100 V transient clamping. | Use Scenario: Reverse-polarity and overvoltage protection for 24 V analog sensor inputs. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for bidirectional blocking. Use Value: VDS = 100 V withstands induced transients; body diode forward voltage <1.3 V ensures low insertion loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.55 Ω max at VGS = 4.5 V; SOT-23-3 package; lower current rating (0.55 A) | Not suitable for >0.5 A continuous loads; limited thermal mass | Prefer for space-constrained, low-current signal switching only |
| IPB200N04S4L-02 | RDS(on) = 2.0 mΩ at VGS = 10 V; TO-263 package; 200 A pulse rating | Over-specified for 1 A use; requires gate driver due to higher Qg | Choose only when upgrading to high-current systems with dedicated gate drive |
Compared with DMN2004LK-7 and IPB200N04S4L-02, BSP296L6327HTSA1 uniquely balances logic-level drivability, SOT-223 thermal performance, and 1 A continuous rating-making it optimal for mid-power industrial and embedded load-switching where board space and gate simplicity are critical.
Availability
BSP296L6327HTSA1 is available at Aetrix Electronics and suitable for LED drivers, USB power switches, DC-DC converter high-side switches, and industrial sensor interface protection requiring stable component supply and long-term manufacturability.
Supply support for BSP296L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The BSP296 belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for logic-compatible switching in space- and thermally-constrained industrial and embedded power systems.
FAQ
Is BSP296L6327HTSA1 suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 0.8–2.0 V and guaranteed RDS(on) ≤ 0.8 Ω at VGS = 4.5 V, the device fully enhances using standard 3.3 V GPIO outputs. Measured gfs ≥ 0.5 S at 1 A confirms strong transconductance under low-VGS conditions.
What is the maximum allowable junction temperature?
The absolute maximum chip operating temperature is +150 °C, with derated power dissipation above TA = 42 °C. Thermal resistance RthJA ≤ 70 K/W is specified for a 40 mm × 40 mm × 1.5 mm PCB with 6 cm² copper area on the drain pad.
Does BSP296L6327HTSA1 include an integrated body diode?
Yes. The MOSFET incorporates a monolithic body diode with forward voltage VSD = 0.95–1.3 V at IF = 2 A and Tj = 25 °C. It supports 1 A continuous and 4 A pulsed reverse diode current, enabling freewheeling in buck and flyback converters.
Can this part replace BSP296H6327XTSA1 in existing designs?
Yes, with identical electrical specs and SOT-223 package. The "L" suffix denotes tape-and-reel packaging per E6327 standard, while "H" indicates alternate reel coding. Both share identical die, RDS(on), VGS(th), and SOA curves-no layout or firmware changes required.
BSP296L6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 700mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 364 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.79W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP296L6327HTSA1 FAQ
1.How can I place an order for BSP296L6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP296L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP296L6327HTSA1 reliable?
The price and inventory of BSP296L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP296L6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BSP296L6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP296L6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP296L6327HTSA1?
BSP296L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP296L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP296L6327HTSA1?
For technical support, including BSP296L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP296L6327HTSA1 requirements.
6.How does Aetrix verify that BSP296L6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSP296L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP296L6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSP296L6327HTSA1?
All BSP296L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSP296L6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP296L6327HTSA1 part is unused and in its original packaging.
Return procedure for BSP296L6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSP296L6327HTSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
