My Inquiry
My Account
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLR3103TRMOSFET N-CH 30V 55A DPAK Infineon Technologies |
5,790 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50 nC @ 4.5 V | ±16V | 1600 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRFL024NMOSFET N-CH 55V 2.8A SOT223 Infineon Technologies |
5,303 | 0.00 |
|
Datasheet |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IPB80N04S306ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
6,387 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 5.4mOhm @ 80A, 10V | 4V @ 52µA | 47 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRL540NLPBFMOSFET N-CH 100V 36A TO262 Infineon Technologies |
4,441 | 0.00 |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74 nC @ 5 V | ±16V | 1800 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IPB50N10S3L16ATMA2MOSFET N-CH 100V 70A TO263-3 Infineon Technologies |
6,655 | 0.00 |
|
Datasheet |
OptiMOS™ T | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
|
SPB80N06S2-08MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,468 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
SPB80N06S2L-07MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
8,805 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 4210 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPA65R420CFDXKSA2MOSFET N-CH 650V 8.7A TO220 Infineon Technologies |
2,623 | 0.00 |
|
Datasheet |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 31.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
BSO303SPHXUMA1MOSFET P-CH 30V 7.2A 8DSO Infineon Technologies |
8,700 | 0.00 |
|
Datasheet |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 21mOhm @ 9.1A, 10V | 2V @ 100µA | 54 nC @ 10 V | ±20V | 2330 pF @ 25 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
|
IRF7811WGTRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
9,633 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V | 12mOhm @ 15A, 4.5V | 1V @ 250µA | 33 nC @ 5 V | ±12V | 2335 pF @ 16 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
