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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3103TR

Name: IRLR3103TR
Brand: Infineon Technologies
SKU: IRLR3103TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3103TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3103TR.pdf

Description:: MOSFET N-CH 30V 55A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,790

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Product details

Overview

IRLR3103TR from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) package, rated for 30V V_DSS, 55A continuous drain current at T_C = 25°C, and 0.019Ω R_DS(on) at V_GS = 10V. It features ultra-low on-resistance, fast switching, full avalanche rating, and surface-mount compatibility - deployed in DC-DC converters, motor drives, and high-efficiency power switches.

For engineers reviewing the IRLR3103TR datasheet, IRLR3103TR pinout, IRLR3103TR application, or IRLR3103TR equivalent, key selection criteria include gate threshold voltage (1.0–2.5V), pulsed drain current (220A), junction-to-case thermal resistance (1.4°C/W), and body diode reverse recovery charge (210–310nC) in hard-switched topologies.

Technical Context

This HEXFET device uses fifth-generation silicon process to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its low 1.0V typical V_GS(th) enables direct drive from 3.3V/5V microcontrollers, and its 50nC total gate charge supports high-frequency PWM operation up to several hundred kHz.

The integrated body diode exhibits 1.3V forward drop at 28A and 81–120ns reverse recovery time, with 210–310nC Q_rr; combined with 7.5nH source inductance and 4.5nH drain inductance, it supports controlled turn-off in synchronous rectification and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage before avalanche; sets upper limit for input rail in buck converters and half-bridge legs.
R_DS(on) @ V_GS=10V	0.019Ω - Conduction loss of ≤1.0W at 7.3A RMS; enables high-current, low-voltage switching without external heatsink in PCB-mount designs.
I_D @ T_C=25°C	55A - Continuous current capability under ideal heatsinking; defines maximum steady-state load in power supplies and motor controllers.
Q_g	50nC - Total gate charge determines driver strength requirement; requires ≥1A peak gate current for 100ns turn-on at 5V drive.
E_AS	240mJ - Single-pulse avalanche energy rating; allows safe operation during inductive load turn-off transients without snubbers.
R_θJC	1.4°C/W - Junction-to-case thermal resistance; enables precise junction temperature estimation when mounted on copper-clad PCBs with thermal vias.
t_r/t_f	210ns / 54ns - Rise/fall times at I_D=34A; supports >200kHz switching in resonant and hard-switched SMPS designs.

Pinout & Package

D-PAK (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration optimized for high-current PCB routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current and gate return path.
Pin 2 (Gate)	Control terminal (G)	High-impedance MOSFET control input; requires low-inductance gate drive trace and local 10nF bypass capacitor.
Pin 3 (Drain)	Power output terminal (D)	Exposed metal pad (Pin 3) - primary current path to high-side rail; must be connected to large copper pour for thermal dissipation.

Key Features

Feature	Design Value
Logic-level gate drive	1.0V typical V_GS(th) enables direct interface with 3.3V MCU GPIOs without level-shifting circuitry.
Fully avalanche-rated	240mJ single-pulse E_AS and 11mJ repetitive E_AR ensure robustness against inductive kickback in relay/motor switching.
Ultra-low R_DS(on)	0.019Ω @ 10V reduces conduction loss by >40% vs. legacy 30V MOSFETs, improving efficiency in battery-powered systems.
Fast body diode	81ns t_rr and 210nC Q_rr minimize reverse recovery losses in synchronous rectifiers and bidirectional converters.
Lead-free & RoHS-compliant	Pb-free construction per JEDEC J-STD-020; qualified for reflow soldering up to 300°C (10s), compatible with standard SMT lines.

Applications

DC-DC Buck Converter

Brushless DC Motor Driver

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load conversion in industrial PLCs and embedded controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–500kHz PWM frequency with 100ns dead-time control.

Use Value: 0.019Ω R_DS(on) limits conduction loss to <0.5W at 15A, enabling compact layout without forced air cooling.

Use Scenario: Half-bridge leg in 24V BLDC motor controller for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter, commutated at 10–20kHz with active freewheeling via body diode.

Use Value: 240mJ E_AS withstands back-EMF spikes during abrupt current interruption, eliminating need for external clamping diodes.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush current limiting and fault protection in 48V telecom power distribution units.

IC Role / Device Role / Timing Role: Main pass element in linear hot-swap IC-controlled circuit, operating in linear region during startup and short-circuit events.

Use Value: 1.4°C/W R_θJC and 107W P_D allow sustained 20A linear operation with minimal thermal derating on 2oz copper PCB.

Use Scenario: High-brightness LED string dimming in architectural lighting using constant-current buck topology.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulated at 1–5kHz to regulate average LED current.

Use Value: 50nC Q_g and 54ns t_f enable clean, low-noise current transitions, reducing EMI and audible coil whine.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3103PBF	Same die, TO-220 through-hole package; higher R_θJA (62°C/W vs. 50°C/W), no exposed drain pad.	Suitable for prototyping or low-volume through-hole assemblies; not recommended for high-density SMT production.	Select IRL3103PBF only when manual soldering or mechanical mounting constraints prohibit D-PAK use.
STP30NF20	200V V_DSS, 30A I_D, 0.045Ω R_DS(on); higher voltage rating but double R_DS(on) and 75nC Q_g.	Better for 100–200V bus applications; unsuitable for 30V high-current designs due to excessive conduction loss.	Choose STP30NF20 only when system overvoltage margin exceeds 100V and gate drive capability supports higher Q_g.

Compared with IRLR3103TR, IRL3103PBF trades surface-mount scalability for mechanical robustness and ease of hand-soldering, while STP30NF20 sacrifices on-resistance and switching speed for higher voltage tolerance - making IRLR3103TR optimal for space-constrained, high-efficiency 30V systems.

Availability

IRLR3103TR is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drivers, hot-swap controllers, and LED constant-current drivers requiring stable component supply and long-term industrial availability.

Supply support for IRLR3103TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and qualify its HEXFET® Power MOSFET portfolio for industrial, automotive, and computing applications.

The IRLR/U3103 series belongs to Infineon's logic-level, low-voltage Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in space-constrained surface-mount power stages.

FAQ

What is the maximum gate-to-source voltage for IRLR3103TR?

The absolute maximum V_GS is ±16V. Operation beyond this risks permanent gate oxide damage. Recommended drive range is 0 to 12V for reliable switching; 10V ensures full enhancement and minimum R_DS(on), while 4.5V remains sufficient for logic-level operation with slightly higher on-resistance (0.024Ω).

Does IRLR3103TR require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. For 3.3V/5V MCU drive, a 10Ω series resistor is typical; for high-speed switching (>300kHz), 2.2–4.7Ω balances speed and EMI. Gate resistor value must be selected with driver output impedance and PCB trace inductance to avoid overshoot exceeding ±16V.

Can IRLR3103TR be used in parallel for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (0.037V/°C) enables inherent current sharing. Parallel operation requires matched layout (identical trace length/width), symmetrical gate drive, and thermal coupling via shared copper area. Derate total current by 15% to account for mismatch and thermal gradients.

Is the body diode in IRLR3103TR suitable for synchronous rectification?

Yes - with 1.3V V_SD at 28A and 81ns t_rr, it performs well in low-voltage synchronous rectification. However, for best efficiency, external Schottky diodes or dedicated synchronous rectifier controllers are preferred above 100kHz due to Q_rr-related switching loss.

IRLR3103TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3103TR FAQ

1.How can I place an order for IRLR3103TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3103TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3103TR reliable?

The price and inventory of IRLR3103TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3103TR is usually 5 days.

3.What payment methods are accepted for IRLR3103TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3103TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3103TR?

IRLR3103TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3103TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3103TR?

For technical support, including IRLR3103TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3103TR requirements.

6.How does Aetrix verify that IRLR3103TR is sourced from the original manufacturer or authorized distributors?

All IRLR3103TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3103TR meets industry standards.

7.What is the process for return or replacement of IRLR3103TR?

All IRLR3103TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3103TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3103TR part is unused and in its original packaging.

Return procedure for IRLR3103TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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