Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFL024N

Part No.:
IRFL024N
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL024N.pdf
Description:
MOSFET N-CH 55V 2.8A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,303

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFL024N from International Rectifier is a 55V, 2.8A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 0.075Ω RDS(on) at VGS = 10V, 1.0W PCB-mount power dissipation, and fully avalanche-rated operation. It serves as a low-side switching device in DC-DC converters, LED drivers, and load-switching circuits where compact size and thermal robustness are critical.

For engineers reviewing the IRFL024N datasheet, IRFL024N pinout, IRFL024N application, or IRFL024N equivalent, key selection considerations include its 55V VDSS, 0.075Ω on-resistance at 10V gate drive, SOT-223 thermal performance (RθJA = 90°C/W on FR-4), fast 13.4ns rise time, and integrated body diode with 35ns reverse recovery.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to minimize conduction loss per unit area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0V) enables compatibility with 3.3V and 5V logic-level drive, and the 18.3nC total gate charge supports efficient high-frequency switching up to several hundred kHz.

The integrated source-drain diode exhibits 1.0V forward drop at 1.68A and 35ns typical reverse recovery time, enabling synchronous rectification or freewheeling in buck topologies. Avalanche energy rating of 214mJ (single-pulse) and 0.1mJ (repetitive) confirms suitability for inductive load switching without external snubbers in moderate-energy applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55V - Maximum drain-source blocking voltage; sets upper limit for input voltage in step-down or load-switch designs.
RDS(on)0.075Ω @ VGS = 10V, ID = 2.8A - Enables <180mW conduction loss at 2.8A, critical for thermally constrained SMT layouts.
ID (continuous)2.8A @ TA = 25°C - Usable continuous current on standard FR-4 PCB with minimum footprint; derates to 2.3A at 70°C ambient.
Qg18.3nC - Total gate charge determines driver strength requirement; compatible with low-power gate drivers like TC4420 or discrete BJT buffers.
tr / tf13.4ns / 17.7ns - Fast edge rates support >500kHz PWM operation with minimal switching loss in hard-switched topologies.
EAS214mJ - Single-pulse avalanche energy allows safe operation during inductive turn-off transients without clamping circuitry.
RθJA90°C/W (FR-4) - Junction-to-ambient thermal resistance defines maximum power handling before exceeding 150°C junction temperature.

Pinout & Package

The IRFL024N is housed in a surface-mount SOT-223 package with an exposed drain tab for enhanced thermal conduction. The package measures 7.55 × 6.90 × 1.95 mm and features three leads plus a thermal pad connected internally to the drain terminal.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current-carrying terminal (high-side or low-side switch node)Exposed copper tab must be soldered to PCB copper pour for thermal management; electrically tied to drain potential.
SourceReference node for gate drive and current return pathConnected to ground or low-side rail; forms common reference for VGS control and body diode cathode.
GateControl electrode for channel formationHigh-impedance input requiring <100nA leakage current; sensitive to ESD; requires gate resistor for ringing suppression.

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.075Ω enables <180mW conduction loss at rated 2.8A, reducing thermal stress in space-constrained SMT designs.
Fully avalanche-rated214mJ single-pulse energy tolerance eliminates need for external clamping in inductive load switching applications.
SOT-223 thermal designEnlarged drain tab delivers 1.0W power dissipation on FR-4 - 2× higher than standard SOT-23 equivalents.
Fast switching speed13.4ns rise time and 18.3nC Qg support efficient operation in 200–500kHz DC-DC converters.
Logic-level compatible2.0–4.0V VGS(th) ensures reliable turn-on with 3.3V or 5V microcontroller GPIO without level-shifting.

Applications

LED Constant-Current DriverUSB Load Switch

Use Scenario: Driving high-brightness LEDs from 5–24V supply with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current-switching MOSFET controlling LED string current via duty-cycle modulation.

Use Value: 0.075Ω RDS(on) minimizes dropout voltage and heat generation, enabling >95% efficiency at 2A load.

Use Scenario: Enabling/disabling power to USB peripheral ports with overcurrent protection.

IC Role / Device Role / Timing Role: Load switch controlled by system MCU GPIO to isolate downstream devices during fault or standby.

Use Value: 2.8A continuous rating and 55V VDSS accommodate 5V/3A USB PD sink paths with margin for surge events.

DC-DC Buck Converter High-Side SwitchIndustrial Sensor Power Sequencing

Use Scenario: High-side switch in non-synchronous buck regulator feeding 3.3V/1.8V rails.

IC Role / Device Role / Timing Role: Main power switch turning on/off inductor current; body diode provides freewheeling path.

Use Value: 35ns trr and 50nC Qrr reduce body-diode conduction loss and switching noise during dead-time transitions.

Use Scenario: Controlled power-up sequence for analog sensor front-ends requiring staggered biasing.

IC Role / Device Role / Timing Role: Precision timing-controlled power switch activated by FPGA or sequencer output.

Use Value: Tight VGS(th) distribution (2.0–4.0V) ensures consistent turn-on timing across temperature and unit variance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LK-7RDS(on) = 0.085Ω @ 4.5V, VDSS = 20V, SOT-23 packageLimited to ≤20V systems; lower thermal mass restricts continuous current to 1.8A on FR-4Prefer for ultra-compact 3.3V logic-driven loads where voltage margin is not required.
SI2302DS-T1-GE3RDS(on) = 0.072Ω @ 4.5V, VDSS = 20V, SOT-23 packageSame voltage limitation; lacks avalanche rating and has no specified EASSelect only for low-energy, non-inductive switching where transient robustness is not critical.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, the IRFL024N offers superior voltage headroom (55V vs. 20V), proven avalanche ruggedness, and SOT-223 thermal performance-making it the only viable choice for 24V industrial loads or inductive switching above 12V.

Availability

IRFL024N is available at Aetrix Electronics and suitable for LED drivers, USB load switches, DC-DC buck converters, and industrial sensor power sequencing requiring stable component supply and long-term manufacturability.

Supply support for IRFL024N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, known for HEXFET® technology and high-reliability discrete semiconductors targeting industrial, automotive, and computing markets.

The IRFL024N belongs to the fifth-generation HEXFET® SOT-223 power MOSFET family, engineered for high-efficiency, surface-mount power switching in space-constrained applications demanding thermal resilience and avalanche robustness.

FAQ

Is IRFL024N suitable for 24V automotive load switching?

Yes. With 55V VDSS, 214mJ avalanche energy, and -55°C to +150°C operating range, the IRFL024N meets requirements for 24V commercial vehicle auxiliary loads. Its SOT-223 package provides adequate thermal margin when mounted on ≥1 cm² copper, though transient load dumps require external TVS protection.

Can IRFL024N be driven directly from a 3.3V microcontroller GPIO?

It can turn on but not fully enhance. At 3.3V gate drive, RDS(on) rises significantly above 0.075Ω due to sub-threshold operation. For reliable 2.8A conduction, use a 5V gate driver or level shifter; at 3.3V, expect ~1.2A continuous current with elevated heating.

What is the maximum PCB copper area needed to achieve 2.1W power dissipation?

To reach the 2.1W rating (specified on 1-inch square copper board), a minimum 25.4 mm × 25.4 mm (1 in²) solid copper pour connected to the drain tab is required. Standard FR-4 with minimum footprint achieves only 1.0W; doubling copper area reduces RθJA from 90°C/W to 50°C/W.

Does IRFL024N have lead-free and RoHS-compliant packaging?

Yes. The "PbF" suffix in IRFL024NPbF denotes lead-free, RoHS-compliant construction. The device uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/85% RH).

IRFL024N Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRFL024N FAQ

1.How can I place an order for IRFL024N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL024N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL024N reliable?

The price and inventory of IRFL024N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL024N is usually 5 days.

3.What payment methods are accepted for IRFL024N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL024N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL024N?

IRFL024N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL024N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL024N?

For technical support, including IRFL024N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL024N requirements.

6.How does Aetrix verify that IRFL024N is sourced from the original manufacturer or authorized distributors?

All IRFL024N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL024N meets industry standards.

7.What is the process for return or replacement of IRFL024N?

All IRFL024N units undergo pre-shipment inspection (PSI). If there is an issue with IRFL024N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL024N part is unused and in its original packaging.

Return procedure for IRFL024N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFL024N Tags

  • IRFL024N
  • IRFL024N PDF
  • IRFL024N Datasheet
  • IRFL024N Specifications
  • IRFL024N Images
  • Infineon Technologies
  • Infineon Technologies IRFL024N
  • Buy IRFL024N
  • IRFL024N Price
  • IRFL024N Distributor
  • IRFL024N Supplier
  • IRFL024N Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER