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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N04S306ATMA1

Name: IPB80N04S306ATMA1
Brand: Infineon Technologies
SKU: IPB80N04S306ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N04S306ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N04S306ATMA1.pdf

Description:: MOSFET N-CH 40V 80A TO263-3

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Product details

Overview

IPB80N04S306ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified MOSFET in PG-TO263-3-2 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5.4 mΩ max R_DS(on) (SMD version), used in high-current DC-DC converters and motor control stages of 12 V automotive power systems.

For engineers reviewing the IPB80N04S306ATMA1 datasheet, IPB80N04S306ATMA1 pinout, IPB80N04S306ATMA1 application, or IPB80N04S306ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction temperature rating, 100% avalanche-tested ruggedness, low gate charge (Q_g = 36–47 nC), and thermal resistance R_thJC = 1.5 K/W for high-power switching reliability.

Technical Context

This OptiMOS™-T device employs trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification with t_rr = 34 ns and Q_rr = 36 nC.

The MOSFET delivers stable R_DS(on) over temperature (5.4 mΩ max at 25 °C, rising to ~12 mΩ at 175 °C), and operates within a safe operating area (SOA) supporting single-pulse avalanche energy up to 125 mJ at I_D = 80 A - validated per AEC-Q101 stress requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) max	5.4 mΩ (SMD version, V_GS = 10 V, I_D = 80 A) - Enables <1 W conduction loss at 80 A, critical for thermally constrained PCB layouts.
I_D continuous	80 A at T_C = 25 °C - Sustains high-current motor phase or solenoid drive without external heatsink under nominal conditions.
E_AS	125 mJ (single-pulse, I_D = 80 A) - Confirmed avalanche ruggedness for inductive turn-off protection in relay/motor drivers.
Q_g	36–47 nC - Low total gate charge reduces driver power demand and switching transition time in high-frequency PWM stages.
t_r/t_f	10 ns / 10 ns - Fast edge rates support >100 kHz switching in buck converters and BLDC inverters.
T_j max	175 °C - Extended junction temperature rating ensures operation in engine bay environments without derating.

Pinout & Package

IPB80N04S306ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), featuring isolated drain tab for direct PCB copper pour thermal coupling and standard 3-pin layout optimized for high-current routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Connected to ground plane or low-side reference; carries full load current and must be routed with low-inductance, wide copper.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring controlled slew rate and gate resistor to prevent oscillation and EMI during fast switching.
Pin 3 (Drain)	Main power output terminal (tab-connected)	Internally bonded to exposed metal tab; requires ≥6 cm² 70 µm copper area on PCB for R_thJA = 40 K/W thermal performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications including engine control modules and EPS systems.
100% avalanche tested	Each unit passes single-pulse avalanche stress test at I_D = 80 A, ensuring field-reliable inductive switching behavior.
Green RoHS-compliant package	Halogen-free, lead-free PG-TO263-3-2 meets EU Directive 2011/65/EU and IPC/JEDEC J-STD-020 MSL1 reflow profile (260 °C peak).
Low R_DS(on) × Q_g figure-of-merit	~200 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 50–200 kHz DC-DC topologies.
Integrated body diode with soft recovery	t_rr = 34 ns, Q_rr = 36 nC - Minimizes voltage overshoot and EMI during freewheeling in half-bridge configurations.

Applications

Automotive Engine Control Unit (ECU)

12 V Automotive DC-DC Converter

Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12 V inductive loads with precise 1–5 ms on-time pulses.

Use Value: Avalanche ruggedness prevents failure during coil flyback; 175 °C rating supports under-hood placement near engine block.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for infotainment head units.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, operating at 200 kHz with 50% duty cycle.

Use Value: 5.4 mΩ R_DS(on) limits conduction loss to <3.5 W at 80 A, enabling compact thermal design without heatsink.

Electric Power Steering (EPS) Motor Driver

Automotive HVAC Blower Controller

Use Scenario: Half-bridge leg in three-phase inverter driving 12 V brushed or BLDC steering assist motor.

IC Role / Device Role / Timing Role: High-current switching element handling peak currents up to 320 A pulsed.

Use Value: 320 A pulsed drain rating and 125 mJ avalanche energy ensure survival during motor stall and regenerative braking events.

Use Scenario: PWM-controlled high-side switch regulating airflow via 12 V DC blower motor in climate control system.

IC Role / Device Role / Timing Role: Robust power switch modulated at 1–20 kHz to control motor speed and torque.

Use Value: MSL1 reflow compatibility enables direct SMT integration into HVAC control board; RoHS compliance satisfies Tier-1 OEM material declarations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N04S3-06	Same die, TO-220-3-1 through-hole package; R_thJC = 1.5 K/W but higher R_thJA (62 K/W on minimal footprint)	Better suited for prototyping or low-volume assemblies where manual soldering or heatsink mounting is preferred	Select when mechanical mounting flexibility or legacy board compatibility outweighs SMT density and thermal optimization needs.
IPB80N04S4-04	Newer OptiMOS™-4 generation; 4.0 mΩ max R_DS(on), 42 nC Q_g, same PG-TO263-3-2 package and AEC-Q101 rating	Delivers lower conduction loss and improved efficiency in new designs targeting <100 W/cm² power density	Choose for next-generation platforms requiring higher efficiency or extended SOA margin, accepting minor cost premium and revised gate drive tuning.

Compared with IPP80N04S3-06, IPB80N04S306ATMA1 offers superior PCB thermal management via D²PAK mounting; versus IPB80N04S4-04, it trades 0.4 mΩ higher R_DS(on) for proven field reliability and broader gate drive voltage tolerance (V_GS(th) up to 4.0 V).

Availability

IPB80N04S306ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and 12 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IPB80N04S306ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-temperature 12 V automotive power switching applications including motor drives, solenoid control, and DC-DC conversion.

FAQ

What is the maximum allowable gate-source voltage for IPB80N04S306ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +12 V or below –5 V is not recommended for long-term reliability. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers, especially in high-dV/dt environments like motor inverters.

Does IPB80N04S306ATMA1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor (R_G) is required to control dV/dt and suppress ringing. For 80 A switching at 200 kHz, a 6 Ω resistor is specified in the datasheet for turn-on/turn-off timing validation. Actual value depends on driver capability and layout parasitics; typical range is 2.2–10 Ω.

Can IPB80N04S306ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables current sharing across paralleled devices. Layout symmetry, matched gate drive paths, and individual source inductance minimization are essential. Derate total current by 15% for two devices and 25% for three or more to ensure thermal balance.

Is the drain tab electrically isolated in the PG-TO263-3-2 package?

No - the drain is internally connected to the exposed metal tab. This tab must be soldered to a dedicated PCB copper pour serving as both thermal sink and electrical drain node. Electrical isolation requires insulating thermal interface materials or separate mounting hardware.

IPB80N04S306ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 52µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N04S306ATMA1 FAQ

1.How can I place an order for IPB80N04S306ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N04S306ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N04S306ATMA1 reliable?

The price and inventory of IPB80N04S306ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N04S306ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N04S306ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N04S306ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N04S306ATMA1?

IPB80N04S306ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N04S306ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N04S306ATMA1?

For technical support, including IPB80N04S306ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N04S306ATMA1 requirements.

6.How does Aetrix verify that IPB80N04S306ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N04S306ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N04S306ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N04S306ATMA1?

All IPB80N04S306ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N04S306ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N04S306ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N04S306ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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