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Infineon Technologies IPB50N10S3L16ATMA2
- Part No.:
- IPB50N10S3L16ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB50N10S3L16ATMA2.pdf
- Description:
- MOSFET N-CH 100V 70A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,655
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Product details
Overview
IPB50N10S3L16ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V VDS, 50 A continuous drain current at TC = 25 °C, and 15.4 mΩ RDS(on) (max) at VGS = 10 V. It delivers robust avalanche performance (330 mJ single-pulse EAS) and supports automotive motor control, DC-DC converters, and high-reliability industrial switching.
For engineers reviewing the IPB50N10S3L16ATMA2 datasheet, IPB50N10S3L16ATMA2 pinout, IPB50N10S3L16ATMA2 application, or IPB50N10S3L16ATMA2 equivalent, key selection criteria include its 175 °C operating temperature, MSL1 reflow compatibility, integrated body diode with 80 ns trr, and validated 100% avalanche testing - critical for under-hood automotive power stages and high-current switching nodes.
Technical Context
This OptiMOS™-T device uses trench-based silicon technology optimized for low RDS(on) × Qg figure-of-merit and fast switching with controlled dV/dt. Its gate threshold voltage (1.2–2.4 V) enables reliable turn-on with standard 3.3 V/5 V logic-level drivers while maintaining noise immunity via tight VGS(th) distribution.
The MOSFET integrates a low-VSD (0.6–1.2 V), fast-recovery body diode (Qrr = 185 nC, trr = 80 ns) and exhibits stable RDS(on) over temperature (α = 0.56), supporting high-efficiency synchronous rectification and bidirectional current handling in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports 48 V and 60 V nominal bus systems with 20 % derating margin |
| RDS(on) max @ VGS=10 V | 15.4 mΩ - Enables ≤1.5 W conduction loss at 50 A, reducing heatsink requirements |
| ID continuous @ TC=25 °C | 50 A - Rated for sustained high-current operation in forced-air or PCB-cooled layouts |
| EAS single-pulse | 330 mJ - Withstands repetitive inductive switching stress without degradation in motor drives |
| trr / Qrr | 80 ns / 185 nC - Minimizes commutation losses and EMI in hard-switched SMPS and inverters |
| Tj operating range | −55 to +175 °C - Qualified for under-hood automotive environments per AEC-Q101 |
| Thermal resistance RthJC | 1.5 K/W - Enables direct thermal coupling to heatsink for high-power density designs |
Pinout & Package
IPB50N10S3L16ATMA2 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D²PAK footprint: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives gate drive signal; requires <12 nC total gate charge for full enhancement |
| Pin 2 (Drain) | Main current sink | Exposed copper tab - must be soldered to PCB copper pour or heatsink for thermal path |
| Pin 3 (Source) | Reference node | Common return for gate drive and load current; defines local ground reference |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive powertrain and chassis applications including engine control modules |
| 100 % avalanche tested | Each unit undergoes single-pulse EAS stress test - ensures ruggedness in inductive load switching |
| MSL1 rating (260 °C peak reflow) | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns |
| Low gate plateau voltage (3.7 V) | Reduces Miller-induced shoot-through risk in half-bridge configurations during high dV/dt transitions |
| Optimized Ciss/Coss ratio (4180 pF / 949 pF) | Improves efficiency in resonant and ZVS topologies by minimizing capacitive switching losses |
Applications
| Automotive Motor Control | Industrial DC-DC Converters |
|---|---|
Use Scenario: High-side switch in 12 V/48 V electric power steering (EPS) actuator H-bridges. IC Role / Device Role / Timing Role: Power MOSFET switching phase current with <80 ns diode recovery to suppress flyback spikes. Use Value: 175 °C rating enables placement near motor windings; 330 mJ EAS withstands stall-current surges without failure. | Use Scenario: Primary-side switch in isolated 400 W telecom DC-DC brick with 48 V input. IC Role / Device Role / Timing Role: Hard-switched 100 kHz PWM transistor with low RDS(on) × Qg trade-off. Use Value: 15.4 mΩ RDS(on) and 64 nC Qg deliver >95 % efficiency at full load with minimal gate drive loss. |
| Onboard Charger (OBC) Input Stage | High-Current Solid-State Relay |
Use Scenario: AC rectification and PFC boost switch in bi-directional EV onboard charger. IC Role / Device Role / Timing Role: Fast-recovery body diode conducts reverse current during regeneration mode. Use Value: 185 nC Qrr and 0.6 V VSD reduce conduction loss and thermal stress during bidirectional operation. | Use Scenario: Replacement for electromechanical relay in battery disconnect units (BDU) for 400 V traction packs. IC Role / Device Role / Timing Role: Low-RDS(on) main power switch with integrated avalanche protection. Use Value: 50 A continuous rating and 100 % avalanche screening ensure fail-safe open-circuit behavior during fault events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP50N10S3L16ATMA1 | TO-220 package (PG-TO220-3-1); higher RthJA (62 K/W vs. 40 K/W on PCB) | Better suited for through-hole prototyping or lower-power air-cooled designs | Select when mechanical mounting constraints favor through-hole or thermal mass is provided externally |
| IPI50N10S3L16ATMA1 | TO-262 package (PG-TO262-3-1); identical RDS(on) but no exposed drain pad | Preferred for automated SMT where thermal vias are impractical or board space is limited | Choose when PCB layout lacks large copper area but requires same electrical specs and SMT compatibility |
Compared with IPP50N10S3L16ATMA1 and IPI50N10S3L16ATMA1, IPB50N10S3L16ATMA2 offers superior thermal performance (RthJC = 1.5 K/W) and highest power density due to its D²PAK drain-tab construction - making it optimal for space-constrained, high-current automotive modules requiring direct heatsink attachment.
Availability
IPB50N10S3L16ATMA2 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and onboard charger input stages requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for IPB50N10S3L16ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability automotive and industrial power conversion - emphasizing ruggedness, thermal performance, and AEC-Q101 compliance.
FAQ
What is the maximum gate-source voltage rating for IPB50N10S3L16ATMA2?
The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between −5 V (for fast turn-off) and 10–15 V (for low RDS(on)), with transient overshoot limited to <18 V per Infineon's application note AN2015-04.
Does IPB50N10S3L16ATMA2 require a gate resistor for safe operation?
Yes - a gate resistor (typically 3.5 Ω to 10 Ω) is required to control dI/dt and suppress oscillation during switching. Infineon specifies RG = 3.5 Ω in dynamic test conditions; values below 2 Ω increase risk of gate ringing and shoot-through in bridge configurations.
Can IPB50N10S3L16ATMA2 be used in synchronous rectification applications?
Yes - its low VSD (0.6–1.2 V) and fast trr (80 ns) make it suitable for synchronous rectification in LLC and phase-shifted full-bridge converters. However, external gate control timing must account for body diode conduction delay to avoid cross-conduction.
Is the drain tab electrically isolated from the PCB in IPB50N10S3L16ATMA2?
No - the drain tab (Pin 2) is electrically connected to the internal drain structure and must be treated as a live high-voltage node. When soldered to a PCB copper pour or heatsink, that surface becomes part of the drain circuit and requires appropriate isolation clearance per IPC-2221B Class B standards.
IPB50N10S3L16ATMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ T
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IPB50N10S3L16ATMA2 FAQ
1.How can I place an order for IPB50N10S3L16ATMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB50N10S3L16ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB50N10S3L16ATMA2 reliable?
The price and inventory of IPB50N10S3L16ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50N10S3L16ATMA2 is usually 5 days.
3.What payment methods are accepted for IPB50N10S3L16ATMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50N10S3L16ATMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB50N10S3L16ATMA2?
IPB50N10S3L16ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB50N10S3L16ATMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB50N10S3L16ATMA2?
For technical support, including IPB50N10S3L16ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50N10S3L16ATMA2 requirements.
6.How does Aetrix verify that IPB50N10S3L16ATMA2 is sourced from the original manufacturer or authorized distributors?
All IPB50N10S3L16ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50N10S3L16ATMA2 meets industry standards.
7.What is the process for return or replacement of IPB50N10S3L16ATMA2?
All IPB50N10S3L16ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50N10S3L16ATMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB50N10S3L16ATMA2 part is unused and in its original packaging.
Return procedure for IPB50N10S3L16ATMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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