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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPB80N06S2L-07

Name: SPB80N06S2L-07
Brand: Infineon Technologies
SKU: SPB80N06S2L-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPB80N06S2L-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SPB80N06S2L-07.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

SPB80N06S2L-07 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET rated for 55 V V_DS, 7 mΩ R_DS(on) at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPB80N06S2L-07 datasheet, SPB80N06S2L-07 pinout, SPB80N06S2L-07 application, or SPB80N06S2L-07 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (450 mJ), thermal resistance (R_thJC = 0.46 K/W typ), and TO263-3 package compatibility with high-power PCB layouts.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance: typical C_iss = 3160 pF and Q_g = 95 nC enable efficient operation in 100–500 kHz hard-switched topologies. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) supports direct drive from microcontrollers without level-shifting.

The integrated body diode exhibits t_rr = 59–75 ns and Q_rr = 80–100 nC, making it suitable for synchronous rectification and freewheeling in buck and H-bridge configurations where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage in high-side switch or synchronous rectifier applications
R_DS(on) @ V_GS = 10 V	5.6–7 mΩ - enables <1 W conduction loss at 80 A in thermally optimized layouts
R_DS(on) @ V_GS = 4.5 V	7.1–10 mΩ - ensures usable on-resistance with 3.3 V or 5 V logic-level gate drivers
I_D (continuous)	80 A @ T_C = 25 °C - supports high-current power stages without external heatsink at moderate duty cycles
E_AS	450 mJ - withstands single-pulse inductive energy in motor control or relay driving without failure
dv/dt rating	6 kV/µs - suppresses false turn-on during high-speed switching in noisy industrial environments
T_j(max)	175 °C - allows operation in under-hood automotive or sealed industrial enclosures

Pinout & Package

SPB80N06S2L-07 is housed in a surface-mount TO263-3 (D²PAK) package with isolated drain tab, optimized for high-current PCB thermal management via large copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense resistor in buck/half-bridge
Pin 2 (Gate)	Control input	Logic-level compatible; requires <100 nC total gate charge for full turn-on
Pin 3 (Drain)	Power output / high-side connection	Exposed metal tab - must be soldered to ≥6 cm² copper area for R_thJA ≤ 40 K/W

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees ruggedness against inductive switching transients up to 450 mJ without derating
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V systems
High dv/dt immunity	6 kV/µs rating prevents spurious turn-on in high-di/dt motor or solenoid drive circuits
Optimized body diode	Q_rr = 80–100 nC and t_rr = 59–75 ns reduce switching losses and EMI in synchronous rectification
Thermal robustness	R_thJC = 0.46 K/W typ enables >150 W power dissipation with minimal case-to-heatsink delta-T

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current BLDC motor phase leg in 24–48 V industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in complementary PWM-driven half-bridge; handles 80 A peak load current with <10 mΩ on-resistance.

Use Value: Enables >97% efficiency at 40 A output due to low R_DS(on) and fast body diode recovery (t_rr < 75 ns).

Use Scenario: Primary-side high-current switch in 12 V → 3.3 V/50 A point-of-load converter.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 100% duty-cycle capability.

Use Value: Reduces conduction loss by 40% vs. discrete Schottky solution; R_DS(on) remains <7 mΩ even at 125 °C junction temperature.

Automotive HVAC Blower Control

Industrial Solenoid Driver

Use Scenario: PWM-controlled 48 V blower motor in automotive cabin climate systems.

IC Role / Device Role / Timing Role: Logic-level driven low-side switch interfacing directly with MCU GPIO pins.

Use Value: Eliminates external level shifter; 1.6 V typical V_GS(th) ensures reliable turn-on across -40 °C to +125 °C ambient.

Use Scenario: 24 V/30 A solenoid actuator in factory automation valves.

IC Role / Device Role / Timing Role: Freewheeling path switch with integrated avalanche energy handling (E_AS = 450 mJ).

Use Value: Absorbs inductive kickback without external TVS; enables compact, cost-optimized PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ @ 10 V; higher Q_g (120 nC); TO220 package	Limited to lower-frequency switching (<100 kHz) due to slower turn-off (t_f = 65 ns)	Prefer when mechanical mounting constraints favor through-hole or thermal mass outweighs switching speed
IRF1404ZLPbF	R_DS(on) = 4.8 mΩ @ 10 V but V_GS(th) = 2.0–4.0 V; not logic-level guaranteed at 4.5 V	Requires gate driver for reliable 3.3 V MCU interface; higher risk of partial turn-on in noise-prone environments	Choose only if lowest R_DS(on) is critical and gate drive voltage ≥ 5 V is assured

Compared with STP80NF55-08 and IRF1404ZLPbF, SPB80N06S2L-07 uniquely balances logic-level drivability, 6 kV/µs dv/dt immunity, and 450 mJ avalanche energy - making it optimal for high-reliability, high-frequency industrial motor drives where gate drive simplicity and transient robustness are non-negotiable.

Availability

SPB80N06S2L-07 is available at Aetrix Electronics and suitable for motor drive half-bridges, DC-DC synchronous buck converters, and automotive HVAC blower control requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPB80N06S2L-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-current switching in automotive, industrial, and computing power supplies.

FAQ

Is SPB80N06S2L-07 pin-compatible with SPB80N06S2-07?

No. SPB80N06S2L-07 uses the TO263-3 package with drain-connected tab, whereas SPB80N06S2-07 is in TO220-3. Pin numbering differs: TO263-3 has Source-Gate-Drain (left-to-right), while TO220-3 is Drain-Source-Gate. PCB footprints and thermal design rules are not interchangeable.

What is the maximum safe gate-source voltage during transient conditions?

The absolute maximum V_GS is ±20 V per datasheet. During fast switching, overshoot must be limited to ≤18 V using gate resistors and/or Zener clamping. Exceeding 20 V risks irreversible gate oxide damage, especially at elevated temperatures (>125 °C).

Can SPB80N06S2L-07 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increases with T_j) enables inherent current sharing. Use matched gate resistors (±5%), symmetrical PCB layout, and shared source inductance minimization. Derate total current by 15% for 2-device parallel operation to ensure thermal balance.

Does this MOSFET require a gate driver for 3.3 V microcontroller operation?

No. With V_GS(th) = 1.2–2.0 V and full enhancement at V_GS ≥ 4.5 V, it operates reliably with 3.3 V logic when driven through low-impedance paths (≤10 Ω series resistance). However, for >100 kHz switching, a dedicated driver improves rise/fall times and reduces switching losses.

SPB80N06S2L-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SPB80N06S2L-07 FAQ

1.How can I place an order for SPB80N06S2L-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB80N06S2L-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB80N06S2L-07 reliable?

The price and inventory of SPB80N06S2L-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2L-07 is usually 5 days.

3.What payment methods are accepted for SPB80N06S2L-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2L-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB80N06S2L-07?

SPB80N06S2L-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB80N06S2L-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB80N06S2L-07?

For technical support, including SPB80N06S2L-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2L-07 requirements.

6.How does Aetrix verify that SPB80N06S2L-07 is sourced from the original manufacturer or authorized distributors?

All SPB80N06S2L-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2L-07 meets industry standards.

7.What is the process for return or replacement of SPB80N06S2L-07?

All SPB80N06S2L-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2L-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB80N06S2L-07 part is unused and in its original packaging.

Return procedure for SPB80N06S2L-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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