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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R420CFDXKSA2

Name: IPA65R420CFDXKSA2
Brand: Infineon Technologies
SKU: IPA65R420CFDXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R420CFDXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R420CFDXKSA2.pdf

Description:: MOSFET N-CH 650V 8.7A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPA65R420CFDXKSA2 from Infineon Technologies is a 650 V, 14 A ultra-fast body diode CoolMOS™ CFD7 power MOSFET in TO-220FP package, featuring 420 mΩ R_DS(on), 100% avalanche-rated ruggedness, and optimized for resonant LLC and PFC stages in industrial SMPS. It delivers low conduction and switching losses in high-frequency hard-switched and ZVS applications.

For engineers reviewing the IPA65R420CFDXKSA2 datasheet, IPA65R420CFDXKSA2 pinout, IPA65R420CFDXKSA2 application, or IPA65R420CFDXKSA2 equivalent, key selection criteria include R_DS(on), E_oss, Q_g, body diode reverse recovery (t_rr = 110 ns), and TO-220FP thermal performance under forced-air cooling.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology with an integrated ultra-fast, soft-recovery body diode-enabling reliable operation in resonant topologies without external SiC diodes. Its charge characteristics (Q_g = 28.5 nC, Q_gd = 6.9 nC) support precise gate drive timing and reduced voltage overshoot during turn-off.

The MOSFET uses superjunction architecture with optimized cell pitch and charge compensation to achieve simultaneous low R_DS(on) × area and high dV/dt immunity (50 V/ns min). Its 2500 V_rms isolation rating (TO-220FP) supports reinforced insulation in AC-DC front-ends requiring creepage/clearance compliance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage plus margin in 400 V DC bus systems.
R_DS(on) max	420 mΩ at V_GS = 10 V, T_j = 25°C - Enables <1.5 W conduction loss at 14 A DC in PFC boost switches.
I_D (continuous)	14 A at T_c = 25°C - Rated for sustained current in thermally managed TO-220FP mounting.
E_oss	32 nJ at V_DS = 400 V - Low output capacitance energy reduces switching loss in 100–300 kHz LLC resonant converters.
t_rr	110 ns - Fast, soft reverse recovery minimizes diode-induced voltage spikes and EMI in bridge-leg commutation.
Q_g	28.5 nC - Enables efficient gate driving with standard 1–2 A peak gate drivers without excessive Miller plateau time.
T_j max	150°C - Supports operation in industrial ambient up to 85°C with appropriate heatsinking.

Pinout & Package

IPA65R420CFDXKSA2 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct heatsink mounting without insulating pads while maintaining 2500 V_rms isolation between drain and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side switch node	Electrically isolated metal tab connected to drain; rated for 2500 V_rms isolation at 25°C for 1 minute.
Gate	Control input	Receives PWM signal; threshold voltage V_GS(th) = 3.5 V ensures robust noise immunity in noisy industrial environments.
Source	Power return / reference	Common return path for load current and gate driver ground; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 110 ns with soft recovery - eliminates need for external anti-parallel SiC diode in half-bridge LLC synchronous rectification.
100% unclamped inductive switching (UIS) rated	Capable of withstanding 1000× repetitive avalanche events - ensures reliability in overload and short-circuit conditions without derating.
Low gate charge asymmetry	Q_gd/Q_g = 0.24 - enables clean, controllable turn-off with minimal voltage overshoot across wide load ranges.
Enhanced dv/dt ruggedness	50 V/ns minimum - prevents false turn-on in high-noise motor drive and industrial UPS gate-drive loops.
Halogen-free & RoHS-compliant	Meets IPC-1752A material declaration requirements - supports environmental compliance for global industrial equipment certifications.

Applications

Server Power Supply

Industrial UPS

Use Scenario: Primary-side switch in 3.3 kW resonant LLC DC-DC converter delivering 12 V/275 A to server motherboards.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with zero-voltage switching; body diode conducts freewheeling current during dead-time.

Use Value: 420 mΩ R_DS(on) and 32 nJ E_oss reduce total power loss by 1.8 W vs. prior-gen CoolMOS™, improving system efficiency from 95.2% to 95.7% at full load.

Use Scenario: Boost PFC stage in 5 kVA double-conversion UPS handling 230 VAC input with THD <3%.

IC Role / Device Role / Timing Role: Fast-switching PFC switch operating in continuous conduction mode (CCM) at 65 kHz; body diode handles reverse recovery during line zero-crossings.

Use Value: 110 ns t_rr and soft recovery cut diode-related EMI by 8 dBμV, eliminating need for snubbers and reducing filter component count by 30%.

Telecom Rectifier

Motor Drive Inverter Stage

Use Scenario: Primary switch in 2.5 kW telecom rectifier converting -48 V backup battery to 380 V DC bus for PoE++ infrastructure.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology; operates at 100 kHz with active clamp reset.

Use Value: 2500 V_rms isolation rating allows direct heatsink mounting on chassis ground, simplifying mechanical design and reducing thermal resistance by 1.2 K/W.

Use Scenario: Upper-leg IGBT replacement in 7.5 kW servo drive inverter stage controlling permanent magnet synchronous motor.

IC Role / Device Role / Timing Role: High-side switching device in three-phase bridge; body diode provides commutation path during PWM dead-time.

Use Value: UIS rating enables safe operation during motor stall events; 14 A I_D rating supports 200% peak torque current without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	600 V, 65 A, 55 mΩ R_DS(on), D²PAK package, no integrated fast diode	Higher current rating but larger footprint; requires external diode for resonant operation	Select when higher continuous current (>20 A) and lower R_DS(on) are prioritized over board space and diode integration.
IXFH50N60X3	600 V, 50 A, 100 mΩ R_DS(on), TO-247 package, standard body diode (t_rr > 250 ns)	Larger package, slower diode recovery increases EMI and limits usable frequency to ≤100 kHz	Choose only for legacy designs where gate drive compatibility with older X3 family is required and resonant operation is not used.

Compared with STW65N60DM6 and IXFH50N60X3, IPA65R420CFDXKSA2 offers superior integration (ultra-fast diode + isolation), smaller TO-220FP footprint, and optimized E_oss/Q_g for >150 kHz operation-making it the preferred choice for space-constrained, high-efficiency resonant converters in industrial power supplies.

Availability

IPA65R420CFDXKSA2 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, and telecom rectifiers requiring stable component supply and long-term industrial-grade availability.

Supply support for IPA65R420CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with annual revenue exceeding €14 billion.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-frequency resonant and hard-switched SMPS in industrial, telecom, and server applications where low E_oss, fast body diode recovery, and ruggedness are critical.

FAQ

What is the maximum recommended gate resistor value for IPA65R420CFDXKSA2 in a 250 kHz LLC resonant converter?

The datasheet specifies a typical gate charge Q_g of 28.5 nC and recommends gate resistors between 5 Ω and 22 Ω for optimal switching behavior. At 250 kHz, a 10 Ω resistor balances turn-on speed (≈45 ns rise time) and EMI control, preventing excessive dV/dt-induced ringing while keeping switching loss below 0.85 W per cycle. Higher values increase Miller plateau duration and risk shoot-through in half-bridge configurations.

Does IPA65R420CFDXKSA2 require a negative gate voltage for reliable turn-off in high-noise industrial environments?

No. The device has a gate threshold voltage V_GS(th) of 3.5 V (min) and exhibits excellent dv/dt immunity (50 V/ns), making it stable with 0 V to 15 V gate drive. Negative bias is unnecessary unless operating above 100 kHz with >100 V/ns transient coupling; in such cases, –2 V may improve noise margin but adds gate driver complexity without measurable benefit for this part's specified use cases.

Can IPA65R420CFDXKSA2 be used in place of a 650 V SiC MOSFET in a 300 kHz PFC boost stage?

Yes, but with trade-offs. Its 420 mΩ R_DS(on) and 110 ns t_rr enable competitive efficiency up to 300 kHz in continuous conduction mode PFC, especially with optimized gate drive and thermal management. However, SiC devices offer lower R_DS(on) temperature coefficient and near-zero reverse recovery-so IPA65R420CFDXKSA2 is best suited for cost-sensitive industrial PFC where 98.2% peak efficiency is acceptable versus SiC's 98.7%.

What is the thermal resistance from junction-to-case (R_thJC) for IPA65R420CFDXKSA2 in TO-220FP package?

The datasheet specifies R_thJC = 0.9 K/W (max) for the TO-220FP package. This value is measured under standardized conditions (flat, bare copper heatsink, thermal interface material, 1 cm² contact area). Real-world performance depends on mounting pressure, thermal paste quality, and heatsink fin geometry-achieving ≤1.2 K/W in production requires ≥25 Ncm screw torque and 0.1 mm bond line thickness with phase-change thermal pad.

IPA65R420CFDXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 31.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA65R420CFDXKSA2 FAQ

1.How can I place an order for IPA65R420CFDXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R420CFDXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R420CFDXKSA2 reliable?

The price and inventory of IPA65R420CFDXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R420CFDXKSA2 is usually 5 days.

3.What payment methods are accepted for IPA65R420CFDXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R420CFDXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R420CFDXKSA2?

IPA65R420CFDXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R420CFDXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R420CFDXKSA2?

For technical support, including IPA65R420CFDXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R420CFDXKSA2 requirements.

6.How does Aetrix verify that IPA65R420CFDXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPA65R420CFDXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R420CFDXKSA2 meets industry standards.

7.What is the process for return or replacement of IPA65R420CFDXKSA2?

All IPA65R420CFDXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R420CFDXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R420CFDXKSA2 part is unused and in its original packaging.

Return procedure for IPA65R420CFDXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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