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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO303SPHXUMA1

Name: BSO303SPHXUMA1
Brand: Infineon Technologies
SKU: BSO303SPHXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO303SPHXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO303SPHXUMA1.pdf

Description:: MOSFET P-CH 30V 7.2A 8DSO

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Product details

Overview

BSO303SPHXUMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in PG-DSO-8 package, rated for -30 V V_DS, 21 mΩ R_DS(on) at V_GS = -10 V and I_D = -9.1 A, with logic-level gate drive (V_GS(th) = -1 to -2 V) and 150 °C maximum junction temperature. It serves as a high-efficiency low-side switch in DC-DC converters and load switching circuits.

For engineers reviewing the BSO303SPHXUMA1 datasheet, BSO303SPHXUMA1 pinout, BSO303SPHXUMA1 application, or BSO303SPHXUMA1 equivalent, key selection criteria include its -30 V breakdown voltage, 21 mΩ on-resistance at -10 V gate drive, -9.1 A continuous drain current at 25 °C ambient, integrated body diode with 19 ns reverse recovery time, and SO8 footprint compatibility with thermal design using 6 cm² copper area.

Technical Context

This device operates in enhancement mode with a negative gate threshold voltage (-1 to -2 V), enabling direct interface with 3.3 V or 5 V logic controllers without level shifting. Its low R_DS(on) and optimized gate charge (Q_g = 40–54 nC) support high-frequency switching in synchronous buck converters and hot-swap circuits.

The MOSFET features a robust avalanche rating (E_AS = 97 mJ), JEDEC-qualified reliability for industrial applications, and thermally enhanced PG-DSO-8 packaging with exposed drain pad for efficient heat dissipation into PCB copper planes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-to-source blocking voltage under reverse bias; defines safe operating range in high-side or low-side switching topologies.
R_DS(on) max	21 mΩ at V_GS = -10 V, I_D = -9.1 A - Determines conduction loss and thermal rise in continuous power delivery paths.
I_D continuous	-9.1 A at T_A = 25 °C - Specifies maximum steady-state current capability with minimal footprint PCB layout.
V_GS(th)	-1 to -2 V - Enables reliable turn-on with standard logic-level outputs; supports 3.3 V microcontroller gate drive.
Q_g	40–54 nC - Governs gate driver power requirement and switching speed; impacts efficiency in >100 kHz SMPS designs.
t_r/t_f	11–17 ns / 33–50 ns - Defines edge transition times; critical for minimizing switching losses and EMI in fast-switching converters.
E_AS	97 mJ - Quantifies single-pulse avalanche energy handling; enables robustness against inductive load transients without external snubbers.

Pinout & Package

BSO303SPHXUMA1 uses the PG-DSO-8 (SO8) surface-mount package with exposed drain pad for thermal conduction. Pin 1 is marked by notch or dot; pins 1–4 are source terminals (internally paralleled), pin 5 is gate, pins 6–8 are drain (including exposed pad).

Pin/Terminal	Circuit Role	Design Meaning
1–4 (S1–S4)	Source	Four paralleled source leads reduce bond wire inductance and improve current sharing in high-current switching paths.
5 (G)	Gate	Single gate input; requires <2.7 V plateau voltage for full enhancement; compatible with standard logic drivers.
6–8 (D1–D3) + Exposed Pad	Drain	Three drain leads plus large thermal pad provide low-inductance, high-current path and enable 6 cm² PCB copper cooling per Infineon's thermal spec.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = -4.5 V, eliminating need for gate driver ICs in 3.3 V/5 V control systems.
Optimized R_DS(on)/Q_g ratio	21 mΩ @ 54 nC enables high-efficiency operation in 300–500 kHz DC-DC converters with minimal gate loss.
JEDEC-qualified reliability	Qualified per JESD22-A114 (HBM 500 V–1 kV) and IEC climatic category 55/150/56 for long-term industrial deployment.
Integrated Schottky-like body diode	V_SD = -0.88 to -1.2 V at -9.1 A ensures low-loss freewheeling in synchronous rectification and reverse polarity protection.

Applications

Power Supply Load Switch

Synchronous Buck Converter Low-Side Switch

Use Scenario: Controlled power-up of FPGA or ASIC core rails in telecom baseband boards.

IC Role / Device Role / Timing Role: Low-side load switch enabling inrush current limiting and sequencing via PWM or GPIO control.

Use Value: 21 mΩ R_DS(on) minimizes dropout voltage (<200 mV at 9 A), while -1.5 V typical V_GS(th) ensures clean turn-on with 3.3 V SoC GPIO.

Use Scenario: Output stage in 12 V input → 1.2 V/20 A point-of-load converter for server CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing catch diode to reduce conduction loss and improve efficiency above 85%.

Use Value: 19 ns t_rr and 9 nC Q_rr suppress reverse recovery spikes, enabling stable 500 kHz operation without added snubbing.

Hot-Swap Controller Back-End Switch

Reverse Polarity Protection Circuit

Use Scenario: In-line protection for 24 V industrial I/O modules subjected to live insertion.

IC Role / Device Role / Timing Role: Current-limited hot-swap FET controlled by dedicated controller IC (e.g., LTC4215).

Use Value: 97 mJ E_AS withstands repeated inductive turn-off transients; SO8 thermal pad sustains 7.1 A at 70 °C ambient per derating curve.

Use Scenario: Input protection for battery-powered medical sensors connected to USB-C or barrel-jack inputs.

IC Role / Device Role / Timing Role: P-channel high-side switch oriented to block reverse current when supply polarity is inverted.

Use Value: -30 V V_DS rating covers 24 V nominal systems with 20% tolerance; -2.7 V plateau voltage ensures sharp turn-off during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7420PbF	R_DS(on) = 24 mΩ @ -10 V; Q_g = 46 nC; SO-8 package; no JEDEC qualification for industrial temp range.	Higher conduction loss at same current; less suitable for 150 °C ambient environments.	Prefer BSO303SPHXUMA1 where extended temperature reliability and lower R_DS(on) are required.
DMG3415L-7	R_DS(on) = 25 mΩ @ -4.5 V; V_GS(th) = -0.5 to -1.2 V; smaller TSOP-6 package; lower thermal mass.	Limited to ≤5 A continuous due to package thermal resistance; unsuitable for >7 A sustained loads.	Select BSO303SPHXUMA1 for higher current density and board-level thermal management flexibility.

Compared with IRF7420PbF and DMG3415L-7, BSO303SPHXUMA1 delivers superior thermal performance (R_thJA = 80 K/W with 6 cm² copper), tighter V_GS(th) distribution, and documented 150 °C operation-making it optimal for space-constrained industrial power stages requiring long-term stability.

Availability

BSO303SPHXUMA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and medical instrumentation requiring stable component supply and long lifecycle support.

Supply support for BSO303SPHXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™-P family, engineered specifically for high-efficiency, high-reliability P-channel switching in compact power conversion and protection circuits.

FAQ

What is the maximum allowable gate-source voltage for BSO303SPHXUMA1?

The absolute maximum V_GS is ±20 V, as specified in the "Maximum Ratings" table. Operation beyond ±20 V risks permanent gate oxide damage. For reliable logic-level drive, V_GS should be maintained between -4.5 V and -10 V to ensure full enhancement while avoiding overstress.

Does BSO303SPHXUMA1 have an integrated ESD protection diode?

Yes-it is rated ESD Class HBM 1B (500 V to 1 kV) per JESD22-A114, indicating built-in gate protection sufficient for standard handling in non-class-0 ESD environments. No external gate resistor or Zener clamp is required for basic assembly, though layout best practices (short traces, ground plane) remain essential.

Can BSO303SPHXUMA1 be used in linear (analog) regulation mode?

No-it is not characterized or guaranteed for linear operation. The Safe Operating Area (SOA) graph shows limited DC capability (e.g., ≤1 A at -10 V V_DS), and thermal runaway risk increases above 100 mA in analog mode. It is designed exclusively for switching applications with defined duty cycles and heatsinking.

How does the exposed drain pad connect electrically and thermally?

The exposed pad is electrically tied to the drain (pins 6–8) and must be soldered to a large PCB copper area (≥6 cm²) for both electrical conduction and thermal dissipation. It is not isolated; connecting it to system ground without drain isolation will cause short circuits. Thermal vias beneath the pad are recommended to transfer heat to inner layers or heatsink.

BSO303SPHXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 9.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO303SPHXUMA1 FAQ

1.How can I place an order for BSO303SPHXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO303SPHXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO303SPHXUMA1 reliable?

The price and inventory of BSO303SPHXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO303SPHXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO303SPHXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO303SPHXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO303SPHXUMA1?

BSO303SPHXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO303SPHXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO303SPHXUMA1?

For technical support, including BSO303SPHXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO303SPHXUMA1 requirements.

6.How does Aetrix verify that BSO303SPHXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO303SPHXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO303SPHXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO303SPHXUMA1?

All BSO303SPHXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO303SPHXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO303SPHXUMA1 part is unused and in its original packaging.

Return procedure for BSO303SPHXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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