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Infineon Technologies SPB80N06S2-08
- Part No.:
- SPB80N06S2-08
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPB80N06S2-08.pdf
- Description:
- MOSFET N-CH 55V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,468
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Product details
Overview
SPB80N06S2-08 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO263-3 (D²PAK) package, rated for 55 V VDS, 80 A continuous drain current at TC = 25 °C, and 8 mΩ RDS(on) at VGS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the SPB80N06S2-08 datasheet, SPB80N06S2-08 pinout, SPB80N06S2-08 application, or SPB80N06S2-08 equivalent, key selection criteria include RDS(on) stability over temperature, unclamped inductive switching robustness, gate charge profile for PWM efficiency, and thermal resistance (RthJC = 0.46 K/W typ) in surface-mount power stages.
Technical Context
This OptiMOS™ device uses trench-gate superjunction technology to achieve low on-resistance with fast switching dynamics: Ciss = 2860 pF (typ), Qg = 72 nC (typ), and tr/tf = 15/14 ns (typ) at VDD = 30 V, ID = 80 A. Its gate threshold voltage (VGS(th) = 2.1–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.
The integrated body diode supports synchronous rectification with VSD = 0.9–1.3 V at IF = 80 A and trr = 53–65 ns, enabling efficient freewheeling in buck converters and H-bridge inverters without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin. |
| RDS(on) | 6.5–8 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 80 A, critical for high-efficiency power stages. |
| ID (cont) | 80 A @ TC = 25 °C - Sustains full load in compact heatsinked designs; derates to ~50 A at TC = 100 °C. |
| EAS | 450 mJ - Withstands single-pulse inductive energy without failure; eliminates need for external snubbers in flyback or motor phase recovery. |
| dv/dt Rating | 6 kV/µs - Resists false turn-on during high-speed switching in noisy industrial environments. |
| RthJC | 0.46 K/W (typ) - Enables direct thermal path to PCB copper; 6 cm² cooling area yields RthJA = 40 K/W. |
| Qg | 72–96 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers. |
Pinout & Package
SPB80N06S2-08 is housed in a surface-mount TO263-3 (D²PAK) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged with Gate (left), Source (center), and Drain (large tab, right).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V logic-level signal; requires <100 nA leakage current handling; sensitive to ESD. |
| Source (S) | Reference node for gate drive and current return | Common node for low-side switching; connects to ground or floating reference; carries full load current. |
| Drain (D) | Main power output terminal | Exposed copper pad soldered to PCB copper pour; conducts 80 A and dissipates heat directly into board. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guarantees ruggedness against unclamped inductive switching up to 450 mJ, eliminating need for external clamping circuits. |
| 175 °C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial drives) without derating. |
| Low gate charge (Qg ≤ 96 nC) | Reduces switching losses and driver complexity in high-frequency (>100 kHz) SMPS topologies. |
| Optimized body diode (trr ≤ 65 ns) | Minimizes reverse recovery loss and EMI in synchronous rectification, especially in 48 V telecom and server PSUs. |
| dv/dt immune (6 kV/µs) | Prevents spurious turn-on in high-noise motor control or PFC circuits without requiring negative gate bias. |
Applications
| Industrial Motor Drives | 48 V DC-DC Converters |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element controlling phase current commutation at 20–50 kHz. Use Value: Low RDS(on) minimizes conduction loss across 80 A peak loads; avalanche rating absorbs back-EMF transients during abrupt current interruption. |
Use Scenario: Primary-side switch in isolated full-bridge DC-DC converter for data center power distribution. IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with zero-voltage switching (ZVS) assist. Use Value: Fast Qgd/Qgs ratio enables precise dead-time control; low Coss reduces capacitive turn-off loss. |
| Automotive On-Board Chargers | High-Power LED Drivers |
|
Use Scenario: Bidirectional AC/DC and DC/DC stage in EV on-board chargers supporting 6.6 kW grid-to-battery transfer. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter. Use Value: Body diode VSD ≤ 1.3 V and trr ≤ 65 ns reduce forward and recovery losses versus discrete Schottky solutions. |
Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting and stadium illumination. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating up to 80 A through multi-string parallel arrays. Use Value: Stable RDS(on) vs. temperature ensures consistent current regulation across -40 to +125 °C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP80NF55-08 | RDS(on) = 8.5 mΩ (min), VDS = 55 V, TO220 package, RthJC = 1.0 K/W | Higher thermal resistance limits power density; unsuitable for compact SMD layouts requiring >40 A continuous. | Select when through-hole mounting and lower cost outweigh thermal performance needs. |
| IRFB4115PBF | RDS(on) = 5.5 mΩ, VDS = 55 V, TO220 package, no specified avalanche rating | Lacks EAS specification; not validated for unclamped inductive switching in motor drives. | Prefer only in non-inductive, low-dv/dt applications like DC load switching where avalanche stress is absent. |
Compared with STP80NF55-08 and IRFB4115PBF, SPB80N06S2-08 delivers superior thermal performance via D²PAK packaging and guaranteed avalanche ruggedness - making it the preferred choice for space-constrained, high-reliability motor and converter designs where transient robustness and board-level heat dissipation are critical.
Availability
SPB80N06S2-08 is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and automotive on-board chargers requiring stable component supply and long-term production continuity.
Supply support for SPB80N06S2-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.
SPB80N06S2-08 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial and automotive power conversion systems.
FAQ
What is the maximum safe operating temperature for SPB80N06S2-08?
The device supports continuous operation up to Tj = 175 °C, verified by design and qualified per JEDEC standards. Thermal derating begins above TC = 25 °C, with ID decreasing linearly to ~50 A at TC = 100 °C using the published ID vs. TC curve (Page 4). PCB layout must provide ≥6 cm² copper area for drain connection to maintain RthJA ≤ 40 K/W.
Does SPB80N06S2-08 require a gate resistor for stability?
Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by gate loop inductance and prevent oscillation during switching. The recommended value balances switching speed (lower RG) and EMI/noise (higher RG); values below 2 Ω increase risk of overshoot and shoot-through in bridge configurations.
Can SPB80N06S2-08 be used in synchronous rectification mode?
Yes - its body diode has characterized VSD = 0.9–1.3 V and trr = 53–65 ns, enabling effective synchronous rectification in buck, LLC, and phase-shifted full-bridge topologies. Gate timing must ensure turn-on before body diode conduction begins to avoid reverse recovery loss.
Is SPB80N06S2-08 RoHS compliant and halogen-free?
Yes - SPB80N06S2-08 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. Full compliance documentation, including material declarations and test reports, is available from Infineon's official product page under document number Q67060-S4284.
SPB80N06S2-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 96 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 215W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
SPB80N06S2-08 FAQ
1.How can I place an order for SPB80N06S2-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPB80N06S2-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPB80N06S2-08 reliable?
The price and inventory of SPB80N06S2-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB80N06S2-08 is usually 5 days.
3.What payment methods are accepted for SPB80N06S2-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB80N06S2-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPB80N06S2-08?
SPB80N06S2-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPB80N06S2-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPB80N06S2-08?
For technical support, including SPB80N06S2-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB80N06S2-08 requirements.
6.How does Aetrix verify that SPB80N06S2-08 is sourced from the original manufacturer or authorized distributors?
All SPB80N06S2-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB80N06S2-08 meets industry standards.
7.What is the process for return or replacement of SPB80N06S2-08?
All SPB80N06S2-08 units undergo pre-shipment inspection (PSI). If there is an issue with SPB80N06S2-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPB80N06S2-08 part is unused and in its original packaging.
Return procedure for SPB80N06S2-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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