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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF3707ZCSTRRMOSFET N-CH 30V 59A D2PAK Infineon Technologies |
9,925 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 250µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF6617TR1MOSFET N-CH 30V 14A DIRECTFET Infineon Technologies |
5,659 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
|
IRL3705NLPBFMOSFET N-CH 55V 89A TO262 Infineon Technologies |
4,522 | 0.00 |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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BSB165N15NZ3GXUMA2TRENCH >=100V Infineon Technologies |
2,603 | 0.00 |
|
Datasheet |
- | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | ±20V | 2800 pF @ 75 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-9 |
|
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BSB165N15NZ3GXUMA3TRENCH >=100V Infineon Technologies |
8,113 | 0.00 |
|
Datasheet |
- | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | ±20V | 2800 pF @ 75 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-9 |
|
|
IPL65R340CFDAUMA2MOSFET N-CH 650V 10.9A 4VSON Infineon Technologies |
6,755 | 0.00 |
|
Datasheet |
CoolMOS™ CFD2 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IRFR18N15DTRPBFMOSFET N-CH 150V 18A DPAK Infineon Technologies |
2,344 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRF6216TRPBFMOSFET P-CH 150V 2.2A 8SO Infineon Technologies |
4,922 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 2.2A (Ta) | 10V | 240mOhm @ 1.3A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±20V | 1280 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IPD530N15N3GBTMA1MOSFET N-CH 150V 21A TO252-3 Infineon Technologies |
7,579 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | ±20V | 887 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRFZ44EMOSFET N-CH 60V 48A TO220AB Infineon Technologies |
7,404 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
