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Infineon Technologies IPD530N15N3GBTMA1
- Part No.:
- IPD530N15N3GBTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD530N15N3GBTMA1.pdf
- Description:
- MOSFET N-CH 150V 21A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,579
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Product details
Overview
IPD530N15N3GBTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET with 150 V VDS, 53 mΩ RDS(on) (max) at VGS = 10 V and ID = 18 A, 21 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature - designed for high-frequency DC-DC converters and synchronous rectification in industrial power supplies.
For engineers reviewing the IPD530N15N3GBTMA1 datasheet, IPD530N15N3GBTMA1 pinout, IPD530N15N3GBTMA1 application, or IPD530N15N3GBTMA1 equivalent, key selection criteria include gate charge (Qg = 8.7–12 nC), low RDS(on) × Qg figure-of-merit, avalanche energy rating (EAS = 60 mJ), and TO-252-3 (DPAK) package thermal performance (RthJC = 2.2 K/W).
Technical Context
This MOSFET employs Infineon's OptiMOSTM3 silicon process optimized for fast switching and low conduction loss. Its gate threshold voltage (VGS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while its low output capacitance (Coss = 80–106 pF) and reverse transfer capacitance (Crss = 3.4 pF) minimize switching losses in hard-switched topologies.
The integrated body diode exhibits trr = 80 ns and Qrr = 229 nC at IF = 18 A, supporting efficient synchronous rectification. Thermal design is enabled by a rated junction-to-case thermal resistance of 2.2 K/W and operation up to 175 °C, validated per JEDEC standards for industrial applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 120 V DC bus designs with 25 % safety margin |
| RDS(on) max | 53 mΩ at VGS = 10 V, ID = 18 A - enables <1.0 W conduction loss at 18 A |
| ID cont. | 21 A at TC = 25 °C - suitable for medium-power SMPS output stages |
| Qg | 8.7–12 nC - balances switching speed and gate drive loss in 100–500 kHz converters |
| EAS | 60 mJ - withstands single-pulse inductive energy without failure |
| RthJC | 2.2 K/W - allows 30+ W power dissipation with modest heatsinking |
| tr/tf | 9 ns / 3 ns - supports clean, fast transitions minimizing overlap loss |
Pinout & Package
IPD530N15N3GBTMA1 is housed in a PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package meets RoHS and halogen-free requirements per IEC61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Reference node for gate drive; connects to power ground or low-side return path |
| Pin 2 (Gate) | Control input | Receives PWM signal; requires <12 nC charge for full enhancement |
| Pin 3 (Drain) | High-side switch node | Connected to load/inductor; electrically tied to large copper area for heat sinking |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | ~460 mΩ·nC - reduces total switching + conduction loss in high-frequency SMPS |
| 175 °C rated junction temperature | Enables operation in sealed enclosures or high-ambient industrial environments |
| JEDEC-qualified reliability | Validated per J-STD-20 and JESD22 for target power conversion applications |
| Integrated robust body diode | Qrr = 229 nC, trr = 80 ns - supports synchronous rectification without external Schottky |
Applications
| Server VRM Output Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency 12 V → 1 V point-of-load regulation in rack-mounted servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter. Use Value: 53 mΩ RDS(on) and 21 A rating deliver <0.5 W conduction loss at full load; low Qg enables 600 kHz operation. | Use Scenario: 48 V input isolated DC-DC module for PLC and motor drive control logic. IC Role / Device Role / Timing Role: Primary-side active clamp or secondary-side synchronous rectifier. Use Value: 150 V rating accommodates reflected transients; 175 °C rating ensures reliability in unventilated cabinets. |
| Solar Microinverter Half-Bridge | EV Onboard Charger Auxiliary Supply |
Use Scenario: High-frequency half-bridge stage in string-level solar microinverters. IC Role / Device Role / Timing Role: Low-side switch in interleaved LLC resonant topology. Use Value: Coss = 80–106 pF and Crss = 3.4 pF reduce capacitive turn-on loss; EAS = 60 mJ handles inductive kickback. | Use Scenario: 400 V DC input auxiliary power supply for gate drivers and MCU in EV onboard chargers. IC Role / Device Role / Timing Role: High-side switch in flyback or forward converter primary side. Use Value: VDS = 150 V provides margin above 120 V clamp voltage; RthJC = 2.2 K/W simplifies thermal layout on compact PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB530N15N3G | Same die, TO-263-3 package - larger footprint, lower RthJC (1.9 K/W) | Better thermal performance in high-power, forced-air-cooled systems | Select when board space permits and >35 W dissipation is required |
| IPP530N15N3G | Same die, TO-220-3 package - through-hole, higher RthJC (2.5 K/W) | Preferred for prototyping, low-volume industrial controls with manual assembly | Select when reworkability or legacy through-hole compatibility is needed |
Compared with IPB530N15N3G and IPP530N15N3G, IPD530N15N3GBTMA1 offers optimal balance of thermal performance (2.2 K/W), surface-mount compatibility, and board-area efficiency - making it ideal for volume-manufactured, space-constrained power modules.
Availability
IPD530N15N3GBTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, solar microinverters, and EV auxiliary power supplies requiring stable component supply across multi-year production cycles.
Supply support for IPD530N15N3GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the OptiMOSTM3 family - engineered for high-efficiency, high-frequency power conversion in industrial and renewable energy systems where low RDS(on) and fast switching are critical.
FAQ
What is the maximum gate-source voltage rating for IPD530N15N3GBTMA1?
The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable 10 V gate drive, a 12 V supply with RC snubber or Zener clamping is recommended to suppress ringing during fast switching transitions.
Does IPD530N15N3GBTMA1 have avalanche capability, and how is it rated?
Yes - it is fully rated for repetitive and single-pulse avalanche. The datasheet specifies EAS = 60 mJ at ID = 18 A, RGS = 25 Ω, confirming ruggedness in inductive switching applications such as relay drivers and flyback snubbers.
Can IPD530N15N3GBTMA1 be used in synchronous rectification without an external Schottky diode?
Yes - its integrated body diode has trr = 80 ns and Qrr = 229 nC at IF = 18 A, enabling use in synchronous rectification up to ~300 kHz in buck and LLC topologies without external diode parallel.
What is the thermal resistance from junction to case, and how should it be applied in layout?
RthJC = 2.2 K/W is measured with the drain pad soldered to ≥6 cm² of 70 µm copper on FR4. To achieve this, use solid copper pour under the exposed drain tab, multiple thermal vias to inner layers, and avoid solder mask over the pad to ensure full thermal contact.
IPD530N15N3GBTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 8V, 10V
- Rds On (Max) @ Id, Vgs:
- 53mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 887 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD530N15N3GBTMA1 FAQ
1.How can I place an order for IPD530N15N3GBTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD530N15N3GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD530N15N3GBTMA1 reliable?
The price and inventory of IPD530N15N3GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD530N15N3GBTMA1 is usually 5 days.
3.What payment methods are accepted for IPD530N15N3GBTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD530N15N3GBTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD530N15N3GBTMA1?
IPD530N15N3GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD530N15N3GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD530N15N3GBTMA1?
For technical support, including IPD530N15N3GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD530N15N3GBTMA1 requirements.
6.How does Aetrix verify that IPD530N15N3GBTMA1 is sourced from the original manufacturer or authorized distributors?
All IPD530N15N3GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD530N15N3GBTMA1 meets industry standards.
7.What is the process for return or replacement of IPD530N15N3GBTMA1?
All IPD530N15N3GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD530N15N3GBTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD530N15N3GBTMA1 part is unused and in its original packaging.
Return procedure for IPD530N15N3GBTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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