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Infineon Technologies IRF6617TR1
- Part No.:
- IRF6617TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6617TR1.pdf
- Description:
- MOSFET N-CH 30V 14A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,659
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Product details
Overview
IRF6617TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel 30V HEXFET® Power MOSFET in DirectFET® ST package, optimized for high-frequency synchronous buck converters in CPU core DC-DC applications. It delivers 6.2 mΩ RDS(on) @ VGS = 10 V, 11 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability.
For engineers reviewing the IRF6617TR1 datasheet, IRF6617TR1 pinout, IRF6617TR1 application, or IRF6617TR1 equivalent, key selection criteria include RDS(on) at 4.5 V (10.3 mΩ), Qgd (4.0 nC), thermal resistance RθJC (3.0 °C/W), body diode trr (16–24 ns), and compatibility with vapor-phase reflow per AN-1035.
Technical Context
The IRF6617TR1 employs trench-gate silicon technology and DirectFET ST packaging to minimize both conduction loss (via low RDS(on)) and switching loss (via low Qg, Qgd, and package inductance). Its gate threshold voltage (1.35–2.35 V) and negative temperature coefficient (∆VGS(th)/∆TJ = −5.4 mV/°C) support stable parallel operation in multiphase VRMs.
Designed specifically for control-FET roles in 30 V input synchronous buck topologies, it features a fully rated 55 A continuous drain current at TC = 25 °C, 120 mJ single-pulse avalanche energy, and 1.0 µA IDSS leakage - enabling robust operation under transient overvoltage and high-temperature conditions typical in server and desktop CPU power delivery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V input bus and transient margin in CPU VRMs |
| RDS(on) max @ 10 V | 8.1 mΩ - Enables <1 W conduction loss at 15 A, critical for >90% efficiency targets |
| RDS(on) max @ 4.5 V | 10.3 mΩ - Ensures stable on-resistance during low-voltage gate drive in adaptive voltage positioning (AVP) |
| Qg typ. | 11 nC - Reduces gate driver power loss and enables fast turn-on (<11 ns delay) at high PWM frequencies |
| Qgd typ. | 4.0 nC - Limits Miller-induced shoot-through risk and improves hard-switching robustness |
| RθJC | 3.0 °C/W - Supports dual-sided cooling to sustain >40 W power dissipation with <10 °C junction-to-case rise |
| trr | 16–24 ns - Minimizes body diode reverse recovery loss during dead-time conduction in synchronous rectification |
Pinout & Package
The IRF6617TR1 uses the DirectFET® ST (Small Size Can, T-Designation) package - a top-side-drain, bottom-side-source/gate copper can structure with 0.7 mm height, 4.75 × 3.70 mm footprint, and no leads. It mounts directly to PCBs via soldered copper pads on both sides for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary high-current path; serves as thermal interface for heatsink or copper plane on board top side |
| Bottom Left Pad | Source (S) | Low-impedance return path; connects to ground plane and provides primary thermal path to PCB |
| Bottom Right Pad | Gate (G) | Control terminal; isolated pad minimizes coupling to high-dI/dt drain node and reduces EMI |
Key Features
| Feature | Design Value |
|---|---|
| DirectFET ST packaging | 0.7 mm profile enables ultra-thin VRM designs while supporting dual-sided cooling for 80% lower RθJA vs. SO-8 |
| Ultra-low Qgd/Qg ratio | 36% - Improves switching efficiency and reduces gate drive losses in 300–1000 kHz buck converters |
| Optimized RDS(on) vs. Qg trade-off | 6.2 mΩ / 11 nC - Balances conduction and switching loss for best FOM (RDS(on) × Qg = 68 mΩ·nC) |
| Enhanced avalanche ruggedness | 120 mJ EAS - Withstands unclamped inductive switching events in high-current CPU load transients |
| Low Crss (160 pF) | Reduces Miller feedback, enabling stable operation with standard gate drivers without external Miller clamp |
Applications
| Server CPU Core VRM | Laptop Voltage Regulator Module |
|---|---|
Use Scenario: High-current, multi-phase buck converter delivering 1–2 V @ up to 150 A to Intel/AMD server CPUs under dynamic load. IC Role / Device Role / Timing Role: Control-FET in synchronous buck stage; switched at 300–600 kHz with precise dead-time control. Use Value: 8.1 mΩ RDS(on) and 11 nC Qg reduce combined conduction + switching loss by ≥15% vs. SO-8 alternatives, improving VRM efficiency and reducing heatsink size. | Use Scenario: Compact, low-profile VRM powering mobile APUs in ultrabooks with strict height constraints (<1.0 mm). IC Role / Device Role / Timing Role: High-side switch in 2-phase 30 V input buck; operated with 4.5 V gate drive for AVP compliance. Use Value: 0.7 mm DirectFET ST height enables full VRM integration beneath keyboard assembly; 10.3 mΩ @ 4.5 V ensures regulation stability across battery voltage range. |
| Gaming Desktop VRM | AI Accelerator Board Power |
Use Scenario: Overclocked desktop platform requiring burst currents >200 A with minimal voltage droop during GPU/CPU co-load. IC Role / Device Role / Timing Role: Primary control-FET in 6+2 phase VRM; subjected to high di/dt (>500 A/µs) and thermal cycling. Use Value: Dual-sided cooling and 3.0 °C/W RθJC maintain TJ < 115 °C under sustained 120 A per phase, preventing thermal throttling. | Use Scenario: Power delivery to FPGA or ASIC-based AI accelerators with fast load-step response requirements (≤1 µs). IC Role / Device Role / Timing Role: Fast-switching control-FET in 4-phase 12–30 V input buck; leverages low Qgd for clean turn-off edge. Use Value: 4.0 nC Qgd and 3.7 ns fall time minimize switching artifacts that could couple into high-speed SerDes lanes on same board. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TR1PBF | 30 V, 5.5 mΩ @ 10 V, 14.5 nC Qg, same DirectFET ST package | Lower RDS(on) but higher Qg; better for low-frequency, high-current phases; less optimal for high-frequency light-load efficiency | Select when conduction loss dominates; avoid if gate drive capability is limited or switching frequency exceeds 700 kHz |
| SiR626DP-T1-GE3 | 30 V, 6.0 mΩ @ 10 V, 10.5 nC Qg, PowerPAK® SO-8L package (1.05 mm height) | Higher profile and single-sided cooling only; RθJA ≈ 58 °C/W vs. IRF6617TR1's 12.5 °C/W (dual-sided) | Select only when DirectFET assembly infrastructure is unavailable; expect ~25% higher thermal resistance and reduced power density |
Compared with IRF6622TR1PBF and SiR626DP-T1-GE3, the IRF6617TR1 offers the best balance of low Qg, low RDS(on), and ultra-low profile - making it uniquely suited for space-constrained, high-efficiency CPU VRMs where thermal management and switching speed are co-critical.
Availability
IRF6617TR1 is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulator modules, and gaming desktop power delivery systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for IRF6617TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF6617TR1 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where low RDS(on), fast switching, and advanced thermal performance are essential.
FAQ
What is the maximum continuous drain current for IRF6617TR1 at 70°C ambient?
The IRF6617TR1 supports 11 A continuous drain current at TA = 70 °C with standard PCB mounting (1 in² Cu), as specified in the Absolute Maximum Ratings table. This value assumes natural convection and accounts for RθJA = 58 °C/W. Dual-sided cooling increases effective current handling significantly - up to 42 A at TC = 25 °C per the datasheet.
Is IRF6617TR1 RoHS-compliant and halogen-free?
Yes. The IRF6617TR1 is RoHS-compliant and halogen-free per Infineon's material declarations. It meets JEDEC J-STD-609 Class 1 for moisture sensitivity (MSL-1), and its DirectFET ST package contains no leaded solder or brominated flame retardants. Full compliance documentation is available via Infineon's Quality Portal.
Can IRF6617TR1 be used in parallel configurations?
Yes - its negative VGS(th) temperature coefficient (−5.4 mV/°C) and matched RDS(on) distribution enable stable current sharing in parallel operation. Designers must ensure symmetrical PCB layout, matched gate drive impedance, and thermal coupling between devices. Application note AN-1035 provides layout guidelines for multi-device DirectFET arrays.
What is the recommended gate resistor value for IRF6617TR1 in a 500 kHz buck converter?
A 2.2 Ω to 4.7 Ω gate resistor is recommended for 500 kHz operation to balance switching speed (minimizing tr/tf) and gate driver stress. At 11 nC Qg, a 3.3 Ω resistor yields ~37 ns RC time constant - sufficient to damp ringing without excessive delay. Layout parasitics must be minimized; gate loop inductance should remain <1 nH for reliable operation.
IRF6617TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6617TR1 FAQ
1.How can I place an order for IRF6617TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6617TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6617TR1 reliable?
The price and inventory of IRF6617TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6617TR1 is usually 5 days.
3.What payment methods are accepted for IRF6617TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6617TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6617TR1?
IRF6617TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6617TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6617TR1?
For technical support, including IRF6617TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6617TR1 requirements.
6.How does Aetrix verify that IRF6617TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6617TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6617TR1 meets industry standards.
7.What is the process for return or replacement of IRF6617TR1?
All IRF6617TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6617TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6617TR1 part is unused and in its original packaging.
Return procedure for IRF6617TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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