Infineon Technologies IRF6216TRPBF

Overview

IRF6216TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in an SO-8 package, rated for -150 V V(BR)DSS, 0.240 Ω RDS(on) at VGS = -10 V and ID = -1.3 A, with -2.2 A continuous drain current at 25°C. It serves as a high-voltage reset switch in active-clamp forward DC-DC converters.

For engineers reviewing the IRF6216TRPBF datasheet, IRF6216TRPBF pinout, IRF6216TRPBF application, or IRF6216TRPBF equivalent, key selection criteria include avalanche ruggedness (200 mJ EAS), low gate-to-drain charge (15–23 nC Qgd), fully characterized Coss (220 pF at VDS = -25 V), and SO-8 thermal performance (RθJA = 50 °C/W).

Technical Context

This device operates as a high-side switching element in isolated DC-DC topologies where fast, controlled turn-off and robust unclamped inductive switching are required. Its negative threshold voltage (-3.0 to -5.0 V VGS(th)) ensures reliable enhancement-mode operation with standard logic-level gate drive.

The SO-8 package integrates three drain pins (pins 1, 2, 3) and two source pins (pins 4, 5) to reduce conduction losses and improve thermal spreading, while the internal body diode supports synchronous rectification and recovery timing in clamp circuits with trr = 80–120 ns and Qrr = 310–460 nC.

Key Specifications

Pinout & Package

IRF6216TRPBF uses the JEDEC MS-012AA-compliant SO-8 surface-mount package with exposed drain pads for enhanced thermal conduction. Pin 1 is Gate (G), pins 2–3 and 8 are Drain (D), pins 4–5 are Source (S), and pin 6 is Drain (D). The package supports lead-free reflow per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Compared with IRF6215PbF and STP15PF12, IRF6216TRPBF delivers optimal balance of high-voltage capability, low RDS(on), and SO-8 thermal performance for production-grade active-clamp DC-DC converters requiring <2.2 A continuous clamp current and ≥150 V system margin.

Availability

IRF6216TRPBF is available at Aetrix Electronics and suitable for active-clamp forward converters, isolated telecom DC-DC modules, and industrial HV DC-DC supplies requiring stable component supply and long-lifecycle support.

Supply support for IRF6216TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was originally developed by International Rectifier and acquired by Infineon in 2015; it targets high-efficiency, high-reliability power conversion in SMPS, motor drives, and industrial power supplies.

FAQ

What is the maximum safe operating voltage for IRF6216TRPBF in continuous DC blocking?

The absolute maximum drain-to-source voltage is -150 V under static conditions (VGS = 0 V, ID = -250 µA). Operation above -135 V is not recommended for long-term reliability without derating for temperature and transients, as the breakdown voltage has a negative temperature coefficient (-0.17 V/°C).

Can IRF6216TRPBF be driven directly from a 3.3 V microcontroller GPIO?

No - its gate threshold voltage ranges from -3.0 V to -5.0 V, and full enhancement requires VGS ≤ -10 V. A dedicated P-channel gate driver (e.g., IRS2001PbF) or level-shifting circuit is required to achieve sufficient negative gate drive relative to source potential.

Does IRF6216TRPBF include an integrated ESD protection diode on the gate?

Yes - the device features gate-to-source reverse leakage specification of ±100 nA at ±20 V, indicating built-in gate oxide protection. However, external 10 kΩ gate resistor and 12 V Zener clamp are still recommended for robustness in high-noise industrial environments.

How does the SO-8 package affect thermal performance compared to TO-220 in high-power clamp applications?

SO-8 offers lower profile and better PCB integration but has higher RθJA (50 °C/W vs. ~62 °C/W for TO-220 without heatsink); however, its RθJL (junction-to-drain lead) is 20 °C/W, enabling effective heat transfer to copper planes. For >1.5 W dissipation, 2 oz. copper with thermal vias under drain pads is essential to match TO-220 thermal performance.