Infineon Technologies IRL3705NLPBF
- Part No.:
- IRL3705NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRL3705NLPBF.pdf
- Description:
- MOSFET N-CH 55V 89A TO262
- Quantity:
- Payment:

- Shipping:

Inventory:4,522
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Product details
Overview
IRL3705NLPBF from Infineon Technologies is a 55 V, 110 A, 8.0 mΩ N-channel HEXFET® Power MOSFET in TO-262 (D-Pak) package, optimized for high-current DC-DC conversion and motor drive switching at 10 V gate drive. It delivers low conduction loss with RDS(on) ≤ 8.0 mΩ at VGS = 10 V and TJ = 25°C, supports continuous ID = 110 A at TC = 25°C, and features enhanced body diode ruggedness for synchronous rectification.
For engineers reviewing the IRL3705NLPBF datasheet, IRL3705NLPBF pinout, IRL3705NLPBF application, or IRL3705NLPBF equivalent, key selection criteria include verified RDS(on) at 10 V drive, SOA compliance up to 175°C junction temperature, avalanche energy rating (EAS = 200 mJ), and D-Pak thermal performance under pulsed and continuous operation.
Technical Context
This logic-level MOSFET uses planar stripe cell technology to achieve low on-resistance while maintaining robust safe operating area (SOA) across linear and switching modes. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V, enabling direct drive from 3.3 V and 5 V microcontrollers without level-shifting.
The device integrates an optimized body diode with reverse recovery time (trr) of 120 ns and Qrr = 45 nC at IF = 46 A, supporting high-frequency hard-switched topologies. Thermal resistance RθJC is 0.45 °C/W, validated for surface-mount PCB layouts with copper pour under the drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 48 V bus systems with 20% margin |
| RDS(on) @ VGS=10 V | 8.0 mΩ - Enables <1.0 W conduction loss at 110 A continuous current |
| ID (continuous, TC=25°C) | 110 A - Supports high-power motor phases and server VRMs without forced air |
| EAS | 200 mJ - Withstands single-pulse inductive energy in relay/snubber-free designs |
| QG | 91 nC - Compatible with standard gate drivers delivering ≥1 A peak output |
| RθJC | 0.45 °C/W - Requires ≥250 mm² 2-oz copper pad for TJ ≤ 175°C at full load |
| tr/tf | 30/40 ns - Supports >200 kHz PWM switching with minimal overlap loss |
Pinout & Package
IRL3705NLPBF is housed in a lead-free TO-262 (D-Pak) package with exposed drain tab for thermal and electrical connection. The package measures 10.16 × 4.70 × 9.14 mm and is designed for surface-mount assembly with solder-reflow profile IPC-J-STD-020 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for channel current | Connected to ground plane or low-side shunt; carries full load current |
| Pin 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <100 pF layout capacitance to minimize ringing |
| Pin 3 (Drain) | Main power output terminal | Internally bonded to metal tab; must be soldered to large copper area for thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver ICs in 5 V MCU systems |
| Enhanced body diode | trr = 120 ns, Qrr = 45 nC - reduces EMI and shoot-through risk in half-bridge synchronous rectifiers |
| 175°C rated junction | Guaranteed operation up to TJ = 175°C - enables compact heatsink design in sealed enclosures |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1 - supports standard reflow without baking |
| 100% UIS tested | Each unit validated for unclamped inductive switching - ensures reliability in motor control fault conditions |
Applications
| Brushless DC Motor Drive | Server VRM High-Side Switch |
|---|---|
Use Scenario: Three-phase inverter stage for 24–48 V BLDC fans and pumps in data center cooling systems. IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz PWM-driven half-bridge, conducting up to 95 A RMS. Use Value: 8.0 mΩ RDS(on) reduces conduction loss by 32% vs. comparable 12 mΩ MOSFETs, lowering thermal stress on PCB copper. | Use Scenario: High-current phase leg in 48 V input, 0.8 V/150 A output multiphase buck converter for AI accelerators. IC Role / Device Role / Timing Role: Synchronous rectifier in 500 kHz interleaved topology, operating in continuous conduction mode. Use Value: Verified 200 mJ avalanche energy allows safe operation during transient overloads without external clamping. |
| Industrial PLC Output Module | EV Onboard Charger Primary Switch |
Use Scenario: Solid-state relay replacement in 24 V DC digital output modules handling inductive solenoid loads. IC Role / Device Role / Timing Role: Single-ended switch with integrated freewheeling path, driven by 3.3 V FPGA I/O. Use Value: VGS(th) ≤ 2.0 V ensures reliable turn-on with 3.3 V logic, eliminating level shifters and reducing BOM count. | Use Scenario: Primary-side switching transistor in 3.3 kW two-stage OBC using LLC + synchronous rectification. IC Role / Device Role / Timing Role: Hard-switched 100 kHz power switch in LLC resonant tank primary leg. Use Value: RθJC = 0.45 °C/W enables 110 A operation with only 2-layer 2-oz PCB, avoiding costly thermal interface materials. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3713PBF | RDS(on) = 5.8 mΩ @ 10 V; higher gate charge (QG = 110 nC); same TO-262 package | Better conduction loss but slower switching; suited for <100 kHz applications where efficiency > speed | Select when minimizing I²R loss dominates over gate drive capability |
| STP110N55F6 | RDS(on) = 7.5 mΩ @ 10 V; lower QG (75 nC); TO-220 package with higher RθJC (1.0 °C/W) | Requires heatsink for >60 A; unsuitable for space-constrained SMT-only layouts | Select only if through-hole mounting and mechanical retention are required |
Compared with IRL3713PBF and STP110N55F6, the IRL3705NLPBF offers optimal balance of low RDS(on), moderate QG, and D-Pak thermal performance-making it preferred for high-density, high-current SMT power stages where both conduction and switching losses matter.
Availability
IRL3705NLPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, server VRMs, industrial PLC output modules, and EV onboard charger primary switches requiring stable component supply and long-term production continuity.
Supply support for IRL3705NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The HEXFET® Power MOSFET product line delivers high-current, low-RDS(on) discrete transistors engineered for efficiency-critical power conversion in computing, transportation, and factory automation systems.
FAQ
What is the maximum continuous drain current for IRL3705NLPBF at 100°C case temperature?
At TC = 100°C, the maximum continuous drain current is derated to 77 A per the Safe Operating Area (SOA) curve in the official Infineon datasheet. This value accounts for thermal limitations of the TO-262 package and assumes adequate PCB copper area (≥400 mm² 2-oz) and still-air conditions.
Does IRL3705NLPBF support 3.3 V logic-level gate drive?
Yes - its gate threshold voltage (VGS(th)) is specified from 1.0 V to 2.0 V, and it achieves full enhancement (RDS(on) ≤ 12 mΩ) at VGS = 4.5 V. At 3.3 V, it conducts ~35 A continuously at TC = 25°C, making it usable in partial-enhancement applications like soft-start or current limiting.
Is the body diode in IRL3705NLPBF suitable for synchronous rectification?
Yes - the body diode is characterized for reverse recovery (trr = 120 ns, Qrr = 45 nC at IF = 46 A) and exhibits low forward voltage (VSD ≈ 1.2 V at 46 A). These parameters enable use in synchronous rectifier configurations up to 200 kHz without external Schottky assist diodes.
What is the recommended PCB layout for thermal management of IRL3705NLPBF?
A minimum 250 mm² copper pour (2-oz thickness) directly beneath the drain tab is required to achieve RθJC = 0.45 °C/W. Use ≥6 thermal vias (0.3 mm diameter, filled or plated) connecting the drain pad to inner-layer ground planes. Keep gate traces short (<10 mm) and avoid routing high-dv/dt node traces adjacent to sensitive analog signals.
IRL3705NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 98 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRL3705NLPBF FAQ
1.How can I place an order for IRL3705NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL3705NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL3705NLPBF reliable?
The price and inventory of IRL3705NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705NLPBF is usually 5 days.
3.What payment methods are accepted for IRL3705NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL3705NLPBF?
IRL3705NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL3705NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL3705NLPBF?
For technical support, including IRL3705NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705NLPBF requirements.
6.How does Aetrix verify that IRL3705NLPBF is sourced from the original manufacturer or authorized distributors?
All IRL3705NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705NLPBF meets industry standards.
7.What is the process for return or replacement of IRL3705NLPBF?
All IRL3705NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL3705NLPBF part is unused and in its original packaging.
Return procedure for IRL3705NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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