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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB165N15NZ3GXUMA3

Name: BSB165N15NZ3GXUMA3
Brand: Infineon Technologies
SKU: BSB165N15NZ3GXUMA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB165N15NZ3GXUMA3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MZ

Datasheet:: BSB165N15NZ3GXUMA3.pdf

Description:: TRENCH >=100V

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Product details

Overview

BSB165N15NZ3GXUMA3 from Infineon Technologies is an n-channel 150 V Power MOSFET in MG-WDSON-2 package, optimized for high-frequency synchronous rectification and primary-side switching in DC/DC converters. It delivers R_DS(on) = 13.1 mΩ (typ), Q_g = 26 nC (typ), Q_oss = 68 nC, and supports 45 A continuous drain current at T_C = 25 °C - enabling high power density in solar inverters and telecom voltage regulators.

For engineers reviewing the BSB165N15NZ3GXUMA3 datasheet, BSB165N15NZ3GXUMA3 pinout, BSB165N15NZ3GXUMA3 application, or BSB165N15NZ3GXUMA3 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit (FOM), double-sided cooling capability, low-profile <0.7 mm height, and compatibility with DirectFET® MZ footprint for layout reuse in space-constrained PoL designs.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) and minimized output charge (Q_oss = 68 nC), directly reducing conduction and switching losses in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust turn-on with standard 10 V gate drivers while maintaining noise immunity.

The MG-WDSON-2 package features exposed drain on both top and bottom surfaces, enabling dual thermal paths with R_thJC = 1.6 K/W (bottom), and integrates low parasitic inductance for clean switching waveforms in >500 kHz DC/DC stages. Dynamic parameters - including C_iss = 2100–2800 pF and t_r/t_f < 10 ns - support fast, low-EMI operation without snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports primary-side switching in 48 V–100 V input telecom and industrial SMPS
R_DS(on), max	16.5 mΩ @ V_GS = 10 V, I_D = 30 A - enables <1.5 W conduction loss at 30 A in 12 V output rails
Q_g, typ	26 nC - reduces gate drive power and allows use of low-current drivers in high-frequency (>1 MHz) controllers
Q_oss	68 nC @ V_DD = 75 V - lowers turn-off energy loss and improves light-load efficiency in ZVS/ZCS circuits
I_D, cont	45 A @ T_C = 25 °C - sustains full load in compact 12 V/50 A point-of-load modules with forced-air cooling
R_thJC	1.6 K/W (bottom) - permits >70 W power dissipation with single-sided heatsinking on PCB copper
V_GS(th)	2–4 V - ensures reliable enhancement-mode turn-on with 5 V logic-level gate drivers

Pinout & Package

BSB165N15NZ3GXUMA3 is housed in Infineon's MG-WDSON-2 package - a low-profile (<0.7 mm), double-sided cooling, leadless surface-mount device with drain-connected top and bottom metal pads and two source terminals. The package outline matches DirectFET® MZ footprint for drop-in PCB compatibility.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Pad)	High-side power path connection	Provides primary thermal path to heatsink or top-layer copper; electrically tied to bottom drain pad
Drain (Bottom Pad)	Main current return path	Serves as primary PCB thermal interface and high-current return; soldered to large copper pour
Source 1 / Source 2	Power ground reference for channel	Two isolated source terminals minimize source inductance and improve gate control stability in high-dI/dt switching
Gate	Control electrode	Single low-inductance gate pad located adjacent to source; optimized for <1.6 Ω external gate resistor

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	341 nC·mΩ (26 nC × 13.1 mΩ) - benchmark for high-frequency DC/DC efficiency vs. size trade-off
Double-sided cooling	Simultaneous thermal extraction from top and bottom drain pads - enables >2× power handling vs. standard SO-8 in same area
Low-profile construction	Height <0.7 mm - fits under low-clearance shields and enables stacked multi-layer board architectures
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - qualified for industrial and telecom end-equipment

Applications

Solar Microinverter DC/DC Stage

Telecom 48 V Input VRM

Use Scenario: Step-up DC/DC converter in string-level solar microinverters operating at 200–300 kHz switching frequency with 150 V bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch managing 150 V input transients and delivering up to 45 A peak current.

Use Value: Ultra-low Q_oss (68 nC) minimizes turn-off loss during hard switching, improving full-load efficiency by ≥0.8% over legacy 150 V MOSFETs.

Use Scenario: High-density 48 V-to-12 V intermediate bus converter in 1RU telecom servers with strict airflow and thermal constraints.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage, operating at 600 kHz with 30 A RMS current.

Use Value: Dual-sided cooling and R_DS(on) = 13.1 mΩ reduce junction temperature rise by 22 °C vs. comparable SO-8 devices, extending lifetime under 70 °C ambient.

Data Center Point-of-Load Converter

Industrial Motor Drive Gate Driver Stage

Use Scenario: 12 V input, 0.8 V/50 A output multiphase buck converter supplying CPU core voltage in AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side switch in interleaved phase leg, requiring sub-10 ns rise/fall times and minimal gate drive loss.

Use Value: Q_g = 26 nC and low C_iss enable clean 1 MHz switching with <100 mV gate overshoot using 1.6 Ω series resistor - eliminating need for active gate clamping.

Use Scenario: High-side control FET in three-phase IGBT gate driver power stage for 3 kW servo drives operating at 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Bootstrap-supplied high-side switch driving IGBT gates with 15 V logic, handling repetitive 100 V transient spikes.

Use Value: V_(BR)DSS = 150 V and EAS = 440 mJ ensure ruggedness against inductive kickback without external TVS, simplifying driver BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 150 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB165N15N3 G	Same die, TO-263-7 package - higher R_thJA (45 K/W vs. 1.6 K/W case), no top-side cooling	Better suited for lower-power, single-sided cooled designs where PCB real estate is less constrained	Select when thermal budget allows >10 °C higher T_j rise and footprint flexibility exists
STP165N15F7	150 V, 16.5 mΩ, but Q_g = 42 nC and Q_oss = 110 nC - 62% higher switching charge	Higher gate drive loss limits usable frequency to ≤300 kHz in high-current PoL	Choose only if cost sensitivity outweighs efficiency and frequency requirements

Compared with IPB165N15N3 G and STP165N15F7, BSB165N15NZ3GXUMA3 uniquely combines double-sided cooling, lowest Q_g × R_DS(on) FOM, and MZ-footprint compatibility - making it the only option capable of sustaining 1 MHz operation at 45 A with <1.0 °C/W total thermal resistance in optimized layouts.

Availability

BSB165N15NZ3GXUMA3 is available at Aetrix Electronics and suitable for solar microinverter DC/DC stages, telecom 48 V VRMs, and data center point-of-load converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSB165N15NZ3GXUMA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

BSB165N15NZ3GXUMA3 belongs to the OptiMOS™ 150 V product line - engineered specifically for high-efficiency, high-power-density DC/DC conversion in solar, telecom, and computing infrastructure where thermal and space constraints dominate design decisions.

FAQ

What is the maximum recommended gate drive voltage for BSB165N15NZ3GXUMA3?

The absolute maximum gate-source voltage is ±20 V per datasheet Table 2. For reliable operation, V_GS should be maintained between 10 V and 15 V: 10 V ensures full enhancement (R_DS(on) ≤ 16.5 mΩ), while exceeding 15 V provides no performance benefit and increases risk of gate oxide stress during transients or layout-induced ringing.

Does BSB165N15NZ3GXUMA3 support bidirectional current flow in synchronous rectifier configurations?

No - it is an n-channel unidirectional MOSFET. Its body diode conducts only from source to drain (anode at source, cathode at drain). In synchronous rectification, it must be placed on the low-side (source grounded) or used with complementary high-side control; reverse current through the channel requires external circuitry to bias the gate positively relative to the source.

Can BSB165N15NZ3GXUMA3 be mounted with thermal interface material (TIM) on the top drain pad?

Yes - the top drain pad is designed for direct TIM contact with a heatsink or cold plate. Infineon specifies 1.6 K/W thermal resistance from junction to top case (R_thJC,top), and recommends using 0.1–0.2 mm thickness of thermally conductive silicone pad or grease with ≥3 W/m·K conductivity to achieve rated performance in double-sided cooling configurations.

Is the MG-WDSON-2 package compatible with standard reflow profiles for lead-free assembly?

Yes - BSB165N15NZ3GXUMA3 is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for ≤30 seconds. The package uses NiPdAu plating and passes JEDEC accelerated testing for solder joint reliability under thermal cycling (−40 °C to +125 °C, 1000 cycles).

BSB165N15NZ3GXUMA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DirectFET™ Isometric MZ

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2-9

BSB165N15NZ3GXUMA3 FAQ

1.How can I place an order for BSB165N15NZ3GXUMA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB165N15NZ3GXUMA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB165N15NZ3GXUMA3 reliable?

The price and inventory of BSB165N15NZ3GXUMA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB165N15NZ3GXUMA3 is usually 5 days.

3.What payment methods are accepted for BSB165N15NZ3GXUMA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB165N15NZ3GXUMA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB165N15NZ3GXUMA3?

BSB165N15NZ3GXUMA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB165N15NZ3GXUMA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB165N15NZ3GXUMA3?

For technical support, including BSB165N15NZ3GXUMA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB165N15NZ3GXUMA3 requirements.

6.How does Aetrix verify that BSB165N15NZ3GXUMA3 is sourced from the original manufacturer or authorized distributors?

All BSB165N15NZ3GXUMA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB165N15NZ3GXUMA3 meets industry standards.

7.What is the process for return or replacement of BSB165N15NZ3GXUMA3?

All BSB165N15NZ3GXUMA3 units undergo pre-shipment inspection (PSI). If there is an issue with BSB165N15NZ3GXUMA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB165N15NZ3GXUMA3 part is unused and in its original packaging.

Return procedure for BSB165N15NZ3GXUMA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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