Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFZ44E

Name: IRFZ44E
Brand: Infineon Technologies
SKU: IRFZ44E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFZ44E

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ44E.pdf

Description:: MOSFET N-CH 60V 48A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,404

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFZ44EPbF from Infineon Technologies (formerly International Rectifier) is a 60V, 48A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.023Ω at V_GS = 10V, 192A pulsed drain current, and full avalanche rating. It serves as a main switching element in DC-DC converters, motor drives, and UPS inverters where high-current, low-conduction-loss power control is required.

For engineers reviewing the IRFZ44EPbF datasheet, IRFZ44EPbF pinout, IRFZ44EPbF application, or IRFZ44EPbF equivalent, key selection criteria include its 60V V_(BR)DSS, 0.023Ω on-resistance, 60nC total gate charge, 175°C max junction temperature, and TO-220AB thermal performance with R_θJC = 1.4°C/W - critical for thermally constrained industrial switching designs.

Technical Context

The IRFZ44EPbF employs fifth-generation HEXFET process technology to achieve low R_DS(on) per die area while maintaining rugged unclamped inductive switching capability (E_AS = 220mJ). Its body diode exhibits t_rr = 69–104ns and Q_rr = 177–266nC under 29A, enabling moderate-frequency hard-switched topologies.

Designed for gate drive compatibility with standard 10V logic-level controllers, it features V_GS(th) = 2.0–4.0V and g_fs = 15S, supporting fast turn-on (t_d(on) = 12ns) and controlled turn-off (t_d(off) = 70ns) with external gate resistance tuning.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	60V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and flyback primary switches.
R_DS(on)	0.023Ω @ V_GS = 10V, I_D = 29A - Directly determines conduction loss (P_cond = I² × R) in continuous high-current operation.
I_D (T_C = 25°C)	48A - Continuous safe DC current at case temperature 25°C; derates linearly above 25°C at 0.71W/°C.
E_AS	220mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive load switching without external snubbers.
Q_g	60nC - Total gate charge required for full turn-on; determines gate driver power and switching loss trade-off at given f_SW.
t_r/t_f	60ns/70ns - Rise/fall times at V_DD = 30V, I_D = 29A, R_G = 15Ω; defines minimum practical switching period and EMI profile.
R_θJC	1.4°C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable thermal rise under 110W dissipation.

Pinout & Package

IRFZ44EPbF uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 300°C soldering (10s, 1.6mm from case) and 10 lbf·in mounting torque. Thermal interface requires flat, greased surface for optimal R_θCS = 0.50°C/W.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control terminal	High-impedance MOSFET input requiring ≥10V for full enhancement; sensitive to ESD (±20V absolute max).
2 – Drain	Power output node	Internally connected to metal tab; electrically tied to heatsink - must be insulated if heatsink is grounded.
3 – Source	Reference node / return path	Common reference for gate drive and load current; carries full switched current and body diode reverse recovery charge.
4 – Drain	Secondary drain connection	Redundant drain lead for lower inductance and higher current handling; paralleled internally with Pin 2.

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 220mJ single-pulse and 11mJ repetitive avalanche energy without failure - eliminates need for overvoltage clamping in inductive switching.
Low R_DS(on) × Q_g figure-of-merit	0.023Ω × 60nC = 1.38Ω·nC - balances conduction and switching losses for 20–100kHz SMPS and motor control applications.
Fast body diode recovery	t_rr = 69ns (typ), Q_rr = 177nC (typ) - reduces cross-conduction loss and voltage overshoot in synchronous rectification and half-bridge freewheeling.
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles - suitable for modern automated SMT and through-hole assembly.

Applications

DC-DC Converters

Motor Drives

Use Scenario: High-current synchronous buck converter in telecom power supply delivering 12V/30A from 48V bus.

IC Role / Device Role / Timing Role: Main high-side switch operating at 100kHz with forced-air cooling.

Use Value: 0.023Ω R_DS(on) limits conduction loss to <1.5W at 30A, enabling >95% efficiency without oversized heatsinks.

Use Scenario: H-bridge driver for 24V brushed DC motor in industrial actuator (max 25A stall).

IC Role / Device Role / Timing Role: Low-side switching element with PWM frequency ≤20kHz and 100% duty cycle capability.

Use Value: 48A continuous rating and 192A pulse support handle motor startup surges; avalanche rating prevents failure during back-EMF transients.

Uninterruptible Power Supplies

Lighting Ballasts

Use Scenario: Inverter stage in 1kVA line-interactive UPS converting 360V DC bus to 230V AC output.

IC Role / Device Role / Timing Role: Half-bridge leg switch in 50Hz SPWM topology with bidirectional current flow.

Use Value: Body diode forward voltage ≤1.3V at 29A ensures low-loss freewheeling during dead-time; t_rr <104ns minimizes shoot-through risk.

Use Scenario: Resonant half-bridge driver in electronic CFL ballast operating at 40–60kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch with zero-voltage switching assistance.

Use Value: 60V V_(BR)DSS accommodates resonant voltage peaks up to 55V; 60nC Q_g allows clean gate drive with low-power IC drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 0.018Ω (lower), Q_g = 72nC (higher), V_(BR)DSS = 60V, TO-220	Better conduction loss but higher gate drive demand; slightly slower t_f (90ns)	Prefer when minimizing I²R loss dominates; verify gate driver can source/sink >1A peak.
IRFZ44N	Identical specs except non-lead-free (SnPb leads); same R_DS(on), Q_g, and avalanche rating	Not RoHS-compliant; unsuitable for EU/China export or new medical/industrial designs	Select only for legacy repair or non-regulated markets where Pb exemption applies.

Compared with STP60NF06 and IRFZ44N, the IRFZ44EPbF offers optimal balance of low gate charge (60nC), robust avalanche capability (220mJ), and RoHS compliance - making it preferred for new industrial and telecom designs requiring reliability, efficiency, and regulatory alignment.

Availability

IRFZ44EPbF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and lighting ballasts requiring stable component supply across production lifecycles.

Supply support for IRFZ44EPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFZ44EPbF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 15Ω gate resistor is specified in the datasheet for switching time measurements (t_d(on) = 12ns, t_f = 70ns). For 100kHz operation, values between 5Ω and 22Ω balance EMI suppression and switching loss. Exceeding 47Ω risks incomplete turn-on due to Miller plateau effects and may cause thermal runaway under high I_D.

Can IRFZ44EPbF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with T_J) enables inherent current sharing. Use matched gate resistors (≤5% tolerance), symmetrical PCB layout, and individual source resistors (0.01Ω) for dynamic balancing. Derate total current by 15% versus sum of individual ratings.

Is the TO-220AB tab electrically isolated?

No - Pin 2 (Drain) and Pin 4 (Drain) are internally connected to the metal tab. The tab is not insulated and must be mounted to an isolated heatsink or fitted with a mica washer and silicone grease when the heatsink is grounded or at a different potential.

Does IRFZ44EPbF require a gate protection Zener diode?

Not strictly required, but recommended: a 15V bidirectional TVS (e.g., SMAJ15A) between gate and source suppresses transients exceeding ±20V absolute maximum rating. This is especially critical in motor drive and inductive load applications where dV/dt coupling can induce gate spikes >30V.

IRFZ44E Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ44E FAQ

1.How can I place an order for IRFZ44E through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44E reliable?

The price and inventory of IRFZ44E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44E is usually 5 days.

3.What payment methods are accepted for IRFZ44E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44E?

IRFZ44E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44E?

For technical support, including IRFZ44E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44E requirements.

6.How does Aetrix verify that IRFZ44E is sourced from the original manufacturer or authorized distributors?

All IRFZ44E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44E meets industry standards.

7.What is the process for return or replacement of IRFZ44E?

All IRFZ44E units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44E part is unused and in its original packaging.

Return procedure for IRFZ44E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.