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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB165N15NZ3GXUMA2

Name: BSB165N15NZ3GXUMA2
Brand: Infineon Technologies
SKU: BSB165N15NZ3GXUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB165N15NZ3GXUMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MZ

Datasheet:: BSB165N15NZ3GXUMA2.pdf

Description:: TRENCH >=100V

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Product details

Overview

BSB165N15NZ3GXUMA2 from Infineon Technologies is an n-channel 150 V Power MOSFET in MG-WDSON-2 package, optimized for high-frequency synchronous rectification and primary-side switching in DC/DC converters. It delivers R_DS(on) = 13.1 mΩ (typ), Q_g = 26 nC (typ), Q_oss = 68 nC, and supports 45 A continuous drain current at T_C = 25 °C - enabling high power density in solar inverters and telecom VRMs.

For engineers reviewing the BSB165N15NZ3GXUMA2 datasheet, BSB165N15NZ3GXUMA2 pinout, BSB165N15NZ3GXUMA2 application, or BSB165N15NZ3GXUMA2 equivalent, this device is selected for its low gate charge × R_DS(on) figure-of-merit (FOM), double-sided cooling capability, and compatibility with DirectFET® MZ footprint - critical for thermally constrained point-of-load designs.

Technical Context

This MOSFET employs trench-based OptiMOS™ technology to minimize conduction and switching losses simultaneously. Its 150 V V_(BR)DSS, 2.0–4.0 V gate threshold voltage, and 0.7 Ω gate resistance support robust gate drive control in hard-switched topologies.

The device features integrated body diode with t_rr = 110 ns and Q_rr = 337 nC, enabling efficient synchronous rectification without external Schottky replacement in medium-voltage buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - rated blocking voltage for primary-side switch use in 48 V–96 V bus systems
R_DS(on), max	16.5 mΩ @ V_GS = 10 V, I_D = 30 A - enables <1.5 W conduction loss at 30 A in TO-263-equivalent thermal envelope
I_D, cont	45 A @ T_C = 25 °C - supports high-current POL stages with minimal paralleling
Q_g, typ	26 nC - reduces gate drive power and allows >1 MHz operation with standard 1-A drivers
Q_oss	68 nC @ V_DS = 75 V - lowers turn-off energy and EMI in ZVS/ZCS resonant converters
R_thJC	1.6 K/W (bottom side) - enables direct heatsink mounting and double-sided thermal path for <1.5 °C/W system thermal resistance
t_rr	110 ns @ I_F = 30 A, dI/dt = 100 A/µs - ensures clean commutation in synchronous buck with minimal voltage overshoot

Pinout & Package

MG-WDSON-2 is a bottom-source, top-drain, dual-side-cooled copper-clip package with exposed drain pad on both top and bottom surfaces. Height < 0.7 mm enables ultra-low-profile board stacking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top & Bottom Pad)	Main current path, high-side node connection	Double-sided copper area provides parallel thermal and electrical paths; requires solder mask defined stencil for reliable bottom-side reflow
Source (Lead Frame)	Reference node for gate drive and current sensing	Low-inductance source bond wires minimized; compatible with Kelvin source routing for accurate R_DS(on)-based current monitoring
Gate (Lead Frame)	Control terminal for channel modulation	0.7 Ω internal gate resistance limits dv/dt-induced shoot-through; supports direct drive from PWM controllers without external gate resistor

Key Features

Feature	Design Value
Optimized for >500 kHz DC/DC conversion	Q_g × R_DS(on) = 340 mΩ·nC (typ) - industry-leading FOM for 150 V class, reducing total switching + conduction loss by ≥18% vs. prior-gen equivalents
Double-sided cooling architecture	1.6 K/W R_thJC (bottom) + 1.6 K/W R_thJC (top) - enables 2× heat extraction capacity vs. single-sided SO-8, critical for sealed telecom modules
DirectFET® MZ footprint compatibility	Same land pattern as industry-standard MZ package - allows drop-in replacement without PCB redesign in existing high-density layouts
Low-profile (< 0.7 mm) construction	Enables <1.2 mm total height with heatsink - essential for slim server VRMs and blade-server power modules where Z-axis space is constrained

Applications

Solar Microinverter DC/DC Stage

Telecom 48 V VRM Primary Switch

Use Scenario: Step-up DC/DC converter boosting PV panel output (30–60 V) to 400 V bus under partial shading.

IC Role / Device Role / Timing Role: High-side main switch operating at 300–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: 13.1 mΩ R_DS(on) and 68 nC Q_oss reduce conduction loss by 22% and turn-off loss by 31% vs. 20 mΩ alternatives at 45 A, directly improving MPPT efficiency.

Use Scenario: Primary-side switch in multiphase buck converter supplying ASIC core voltage (0.8–1.2 V) from 48 V intermediate bus.

IC Role / Device Role / Timing Role: Fast-switching power FET with tight gate threshold (2–4 V) enabling precise dead-time control in digital PWM ICs.

Use Value: 26 nC Q_g allows full turn-on within 26 ns using 1-A driver, minimizing overlap loss and supporting >1 MHz phase interleaving without gate drive bottleneck.

Data Center Point-of-Load Converter

Industrial Motor Drive Half-Bridge

Use Scenario: Compact 30 A POL module mounted directly on GPU/CPU carrier board with strict height limit (<1.5 mm).

IC Role / Device Role / Timing Role: Low-profile, double-sided cooled high-side FET in 2-phase synchronous buck.

Use Value: <0.7 mm height and dual thermal pads enable direct thermal coupling to both board and heatsink, achieving 65 °C junction rise at full load - 12 °C cooler than SO-8 equivalents.

Use Scenario: Upper-leg switch in 15 kW servo drive half-bridge feeding PMSM motor (V_bus = 120 V DC).

IC Role / Device Role / Timing Role: Hard-switched main switch with avalanche-rated 440 mJ E_AS for inductive load protection.

Use Value: 440 mJ single-pulse avalanche energy withstands 30 A inductive kickback without failure, eliminating need for external snubbers in compact drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB165N15N3 G	Same die, TO-263-7 package; R_DS(on) = 16.5 mΩ, Q_g = 26 nC, but single-sided cooling (R_thJC = 1.6 K/W only bottom)	Larger footprint (10.0 × 15.6 mm vs. 5.0 × 6.0 mm); unsuitable for ultra-thin modules	Select when PCB-level heatsinking is available and Z-height is unconstrained
STP165N15F7	150 V, R_DS(on) = 17.5 mΩ, Q_g = 31 nC, D²Pak package; no double-sided cooling	Higher switching loss (23% more Q_g × R_DS(on)) and 3.2 mm height - incompatible with sub-1.5 mm assemblies	Select only for cost-sensitive industrial drives where thermal margin >15 °C exists

Compared with IPB165N15N3 G and STP165N15F7, BSB165N15NZ3GXUMA2 uniquely delivers identical electrical performance in a 5×6 mm, <0.7 mm profile with dual thermal interfaces - making it the sole choice for space- and thermal-constrained high-frequency POL and microinverter designs.

Availability

BSB165N15NZ3GXUMA2 is available at Aetrix Electronics and suitable for solar microinverters, telecom 48 V VRMs, and data center point-of-load converters requiring stable component supply across multi-year production cycles.

Supply support for BSB165N15NZ3GXUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 150 V power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC/DC conversion in solar, telecom, and computing infrastructure - emphasizing low FOM, fast switching, and advanced thermal packaging.

FAQ

What is the maximum allowable gate-source voltage for BSB165N15NZ3GXUMA2?

The absolute maximum V_GS is ±20 V per the datasheet's "Maximum ratings" table. Operation beyond ±15 V risks permanent gate oxide damage, especially at elevated temperatures. Recommended drive range is 0 V to +10 V for optimal R_DS(on) and reliability; negative bias down to –5 V may be used for enhanced noise immunity in noisy environments.

Does BSB165N15NZ3GXUMA2 support printed circuit board-level thermal vias for bottom-side cooling?

Yes - the MG-WDSON-2 package's bottom drain pad is designed for direct solder attachment to a large copper pour with thermal vias to inner layers or backside heatsink. The datasheet specifies 6 cm² of 70 µm thick copper on FR4 as the reference test condition for R_thJA = 45 K/W, and recommends ≥12 thermal vias (0.3 mm diameter, 0.5 mm pitch) under the pad for optimal performance.

Can BSB165N15NZ3GXUMA2 be used in avalanche mode for inductive load protection?

Yes - it is fully rated for repetitive and single-pulse avalanche operation, with E_AS = 440 mJ (single pulse, I_D = 30 A, R_GS = 25 Ω). This capability is validated per JEDEC JESD24-11 and enables robust operation in motor drive half-bridges without external clamping, provided layout minimizes stray inductance and gate drive remains active during recovery.

Is the body diode of BSB165N15NZ3GXUMA2 suitable for synchronous rectification without external Schottky replacement?

Yes - its body diode has t_rr = 110 ns and Q_rr = 337 nC at I_F = 30 A, enabling efficient synchronous rectification in buck converters up to 500 kHz. However, for >1 MHz operation or ultra-low forward drop requirements, a discrete Schottky (e.g., IDH08SG60C) remains preferable due to lower V_SD (0.35 V vs. 0.9 V typ).

BSB165N15NZ3GXUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DirectFET™ Isometric MZ

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2-9

BSB165N15NZ3GXUMA2 FAQ

1.How can I place an order for BSB165N15NZ3GXUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB165N15NZ3GXUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB165N15NZ3GXUMA2 reliable?

The price and inventory of BSB165N15NZ3GXUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB165N15NZ3GXUMA2 is usually 5 days.

3.What payment methods are accepted for BSB165N15NZ3GXUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB165N15NZ3GXUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB165N15NZ3GXUMA2?

BSB165N15NZ3GXUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB165N15NZ3GXUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB165N15NZ3GXUMA2?

For technical support, including BSB165N15NZ3GXUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB165N15NZ3GXUMA2 requirements.

6.How does Aetrix verify that BSB165N15NZ3GXUMA2 is sourced from the original manufacturer or authorized distributors?

All BSB165N15NZ3GXUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB165N15NZ3GXUMA2 meets industry standards.

7.What is the process for return or replacement of BSB165N15NZ3GXUMA2?

All BSB165N15NZ3GXUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with BSB165N15NZ3GXUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB165N15NZ3GXUMA2 part is unused and in its original packaging.

Return procedure for BSB165N15NZ3GXUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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