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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPL65R340CFDAUMA2

Name: IPL65R340CFDAUMA2
Brand: Infineon Technologies
SKU: IPL65R340CFDAUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPL65R340CFDAUMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerTSFN

Datasheet:: IPL65R340CFDAUMA2.pdf

Description:: MOSFET N-CH 650V 10.9A 4VSON

Quantity:: RFQ Add To RFQ list

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Inventory:6,755

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Product details

Overview

IPL65R340CFDAUMA2 from Infineon Technologies is a 650 V, 0.34 Ω R_DS(on) CoolMOS™ CFD2 superjunction power MOSFET in ThinPAK 8x8 package, featuring ultra-fast body diode (di_F/dt = 900 A/µs), low Q_g (41 nC), and E_oss = 3.5 µJ @ 400 V - optimized for resonant LLC and PFC stages in high-efficiency server PSUs and telecom rectifiers.

For engineers reviewing the IPL65R340CFDAUMA2 datasheet, IPL65R340CFDAUMA2 pinout, IPL65R340CFDAUMA2 application, or IPL65R340CFDAUMA2 equivalent, key selection criteria include body diode commutation ruggedness, low gate charge for ZVS operation, thermal resistance (R_thJC = 1.2 °C/W), and leadless SMD compatibility with high-power-density board layouts.

Technical Context

This device implements a superjunction (SJ) cell structure enabling simultaneous reduction of R_DS(on) × Q_g and E_oss, with a gate threshold voltage (V_GS(th)) of 3.5–4.5 V and plateau voltage of 6.4 V - supporting standard 12 V gate drivers without level-shifting. Its dv/dt ruggedness is rated at 50 V/ns under both MOSFET and diode switching conditions.

The integrated ultra-fast body diode achieves t_rr = 95 ns, Q_rr = 0.35 µC, and I_rrm = 6.5 A at 400 V reverse bias - enabling hard- and soft-switched topologies without external SiC diode co-packaging. Thermal design is enabled by R_thJC = 1.2 °C/W and a 1 mm profile ThinPAK package with drain-connected thermal pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V maximum blocking voltage - supports 400 V AC input rectified systems with 20% margin for surge and ringing.
R_DS(on),max	0.34 Ω at T_j = 150 °C - enables <1.5 W conduction loss at 4.4 A RMS in continuous conduction mode PFC.
Q_g,typ	41 nC - reduces gate drive power and allows use of low-current drivers (e.g., 1-A peak) in high-frequency (>100 kHz) LLC designs.
E_oss	3.5 µJ @ 400 V - lowers turn-on switching loss and eases zero-voltage switching (ZVS) implementation in resonant converters.
di_F/dt	900 A/µs - ensures robust commutation during synchronous rectification or half-bridge freewheeling without oscillation or latch-up.
R_thJC	1.2 °C/W - supports >100 W power dissipation with minimal heatsink area when mounted on 6 cm² copper pour.

Pinout & Package

ThinPAK 8x8 (PG-VSON-4) is a leadless surface-mount package with 1 mm height and 64 mm² footprint. Drain is connected to the exposed thermal pad (Pin 5), Gate to Pin 1, Power Source to Pins 3 and 4, and Driver Source to Pin 2 - enabling Kelvin source sensing for precise gate control.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires low-inductance routing to minimize ringing during fast switching.
Pin 2	Driver Source	Kelvin connection for gate driver return - decouples power loop from gate loop to suppress false turn-on.
Pins 3 & 4	Power Source	Main current-carrying source terminals; paralleled for lower resistance and inductance in high-current paths.
Pin 5	Drain	Exposed thermal pad tied to drain potential - serves as primary heat path to PCB copper and must be fully soldered.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 95 ns, Q_rr = 0.35 µC - eliminates need for external anti-parallel SiC diodes in bridge-leg freewheeling.
Low FOM (R_DS(on) × Q_g)	14.0 Ω·nC - improves trade-off between conduction and switching losses in 100–300 kHz resonant converters.
High commutation ruggedness	di_F/dt = 900 A/µs, E_AS = 290 mJ - withstands abrupt current reversal in LLC tank and phase-shifted full-bridge without failure.
Leadless ThinPAK package	64 mm² footprint, 1 mm height - reduces system volume by >57% vs. D²PAK while lowering parasitic inductance by ~40%.

Applications

Server PSU LLC Resonant Converter

Telecom Rectifier PFC Stage

Use Scenario: Primary-side switch in 3.3 kW half-bridge LLC resonant converter operating at 250 kHz with ZVS across full load range.

IC Role / Device Role / Timing Role: High-side resonant switch handling 12 A peak drain current and 400 V DC bus, leveraging ultra-low E_oss for reliable ZVS initiation.

Use Value: Enables >96.5% efficiency at 50% load by minimizing turn-on loss and eliminating body diode reverse recovery spikes.

Use Scenario: Boost switch in active clamp PFC front-end for 48 V telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost transistor managing 10 A RMS current and 650 V blocking, driven by UCC28070 controller.

Use Value: Reduces thermal derating by 15 °C vs. legacy SJ MOSFETs due to R_thJC = 1.2 °C/W and low Q_g-driven gate loss.

LCD TV Backlight Inverter

Industrial LED Driver

Use Scenario: Half-bridge switch in resonant inverter driving CCFL backlight at 60 kHz, requiring high dv/dt immunity and low EMI.

IC Role / Device Role / Timing Role: Low-side switching element subjected to 400 V transient spikes and rapid polarity reversal during lamp ignition.

Use Value: Prevents false triggering and avalanche failure via 50 V/ns dv/dt rating and 290 mJ single-pulse E_AS.

Use Scenario: Primary switch in isolated flyback LED driver for street lighting (75 W, 400 V DC bus), operating in quasi-resonant mode.

IC Role / Device Role / Timing Role: Main power switch conducting 1.8 A RMS with 100% duty-cycle capability during dimming transients.

Use Value: Delivers stable output over 10:1 dimming range by maintaining low R_DS(on) drift (0.34 Ω @ 150 °C) and robust body diode conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R045C7	650 V, 0.045 Ω R_DS(on), TO-247 package, higher Q_g (110 nC), no Kelvin source	Higher conduction efficiency but larger footprint and slower switching; suited for lower-frequency (<70 kHz) hard-switched PFC	Select when thermal budget permits larger heatsink and gate drive can support 110 nC charge.
STP65N6F7	650 V, 0.055 Ω R_DS(on), TO-220FP package, standard body diode (t_rr > 250 ns), R_thJC = 2.5 °C/W	Lower cost but unsuitable for ZVS due to slow diode and higher thermal resistance; limited to DCM/CCM flyback	Select only for cost-sensitive, non-resonant, low-power (<150 W) applications where size and efficiency are secondary.

Compared with IPW65R045C7 and STP65N6F7, IPL65R340CFDAUMA2 delivers optimal balance of switching speed, thermal performance, and compactness - uniquely enabling high-frequency resonant topologies in space-constrained server and telecom modules without sacrificing ruggedness.

Availability

IPL65R340CFDAUMA2 is available at Aetrix Electronics and suitable for server PSU LLC resonant converters, telecom rectifier PFC stages, and industrial LED drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPL65R340CFDAUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors - with leadership in silicon-based high-voltage power devices since 1999.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-frequency resonant power conversion in datacenter, telecom, and industrial SMPS - emphasizing body diode robustness, low E_oss, and SMD thermal performance.

FAQ

Is IPL65R340CFDAUMA2 pin-compatible with earlier CoolMOS™ CFD variants?

No - IPL65R340CFDAUMA2 uses ThinPAK 8x8 (PG-VSON-4) with 4-terminal layout (Drain, Gate, Power Source ×2, Driver Source), whereas CFD1 used TO-220 or TO-247 packages. PCB layout and gate drive routing must be redesigned to accommodate Kelvin source separation and thermal pad soldering requirements.

What is the maximum recommended gate resistor for ZVS operation in an LLC half-bridge?

A gate resistor of 3.4 Ω is validated in the datasheet for t_r = 7.5 ns and t_f = 7 ns at 400 V, 6.6 A. For ZVS optimization, values between 2.2 Ω and 4.7 Ω are typical; lower values improve turn-on speed but increase gate drive loss and risk overshoot if layout inductance exceeds 3 nH.

Does IPL65R340CFDAUMA2 require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage of 3.5–4.5 V and operates reliably with 0 V turn-off. However, applying –2 V to –5 V improves noise immunity in high-dv/dt environments and reduces Miller-induced false turn-on probability during high-side switching transitions.

Can the ThinPAK 8x8 package be hand-soldered using reflow profiles?

Yes - it is qualified for MSL2a per J-STD-020 and supports standard lead-free reflow profiles (peak 260 °C, 30 s max). Critical process controls include full thermal pad solder coverage (>90%), stencil aperture ratio ≥0.66, and preheat ramp rate ≤3 °C/s to prevent voiding and delamination.

IPL65R340CFDAUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: 4-PowerTSFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 400µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104.2W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-4

IPL65R340CFDAUMA2 FAQ

1.How can I place an order for IPL65R340CFDAUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPL65R340CFDAUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPL65R340CFDAUMA2 reliable?

The price and inventory of IPL65R340CFDAUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPL65R340CFDAUMA2 is usually 5 days.

3.What payment methods are accepted for IPL65R340CFDAUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPL65R340CFDAUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPL65R340CFDAUMA2?

IPL65R340CFDAUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPL65R340CFDAUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPL65R340CFDAUMA2?

For technical support, including IPL65R340CFDAUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPL65R340CFDAUMA2 requirements.

6.How does Aetrix verify that IPL65R340CFDAUMA2 is sourced from the original manufacturer or authorized distributors?

All IPL65R340CFDAUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPL65R340CFDAUMA2 meets industry standards.

7.What is the process for return or replacement of IPL65R340CFDAUMA2?

All IPL65R340CFDAUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPL65R340CFDAUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPL65R340CFDAUMA2 part is unused and in its original packaging.

Return procedure for IPL65R340CFDAUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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