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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF7811 MOSFET N-CH 28V 14A 8SO Infineon Technologies	3,577	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	28 V	14A (Ta)	4.5V	11mOhm @ 15A, 4.5V	1V @ 250µA	23 nC @ 5 V	±12V	1800 pF @ 16 V	-	3.5W (Ta)	-	-	-	Surface Mount	8-SO
IPTG025N10NM5ATMA1 TRENCH >=100V PG-HSOG-8 Infineon Technologies	4,794	RFQ	Datasheet	OptiMOS™	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	27A (Ta), 206A (Tc)	6V, 10V	2.5mOhm @ 150A 10V	3.8V @ 158µA	120 nC @ 10 V	±20V	8800 pF @ 50 V	-	3.8W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOG-8-1
IRFIZ46N MOSFET N-CH 55V 33A TO220AB FP Infineon Technologies	5,057	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	33A (Tc)	10V	20mOhm @ 19A, 10V	4V @ 250µA	61 nC @ 10 V	±20V	1500 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP
SPP100N06S2L-05 MOSFET N-CH 55V 100A TO220-3 Infineon Technologies	3,984	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	100A (Tc)	10V	4.7mOhm @ 80A, 10V	2V @ 250µA	230 nC @ 10 V	±20V	7530 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1
SPD18P06P MOSFET P-CH 60V 18.6A TO252-3 Infineon Technologies	9,595	RFQ	Datasheet	SIPMOS®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	18.6A (Tc)	10V	130mOhm @ 13.2A, 10V	4V @ 1mA	33 nC @ 10 V	±20V	860 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
IPD5N03LAG MOSFET N-CH 25V 50A TO252-3 Infineon Technologies	2,689	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	25 V	50A (Tc)	4.5V, 10V	5.2mOhm @ 50A, 10V	2V @ 35µA	22 nC @ 5 V	±20V	2653 pF @ 15 V	-	-	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-11
IRFH7932TR2PBF MOSFET N-CH 30V 24A PQFN56 Infineon Technologies	5,747	RFQ	Datasheet	-	8-PowerVDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	24A (Ta), 104A (Tc)	-	3.3mOhm @ 25A, 10V	2.35V @ 100µA	51 nC @ 4.5 V	-	4270 pF @ 15 V	-	3.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PQFN (5x6) Single Die
IPI06CN10N G MOSFET N-CH 100V 100A TO262-3 Infineon Technologies	8,483	RFQ	Datasheet	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	6.5mOhm @ 100A, 10V	4V @ 180µA	139 nC @ 10 V	±20V	9200 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3
IPI60R165CPAKSA1 MOSFET N-CH 650V 21A TO262-3 Infineon Technologies	5,625	RFQ	Datasheet	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	21A (Tc)	10V	165mOhm @ 12A, 10V	3.5V @ 790µA	52 nC @ 10 V	±20V	2000 pF @ 100 V	-	192W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3
IRL2505STRL MOSFET N-CH 55V 104A D2PAK Infineon Technologies	3,515	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	104A (Tc)	4V, 10V	8mOhm @ 54A, 10V	2V @ 250µA	130 nC @ 5 V	±16V	5000 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

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